Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control

Patent metadata

Field	Value
Publication number	US-11866845-B2
Application number	US-202217570141-A
Country	US
Kind code	B2
Filing date	Jan 6, 2022
Priority date	Jan 6, 2022
Publication date	Jan 9, 2024
Grant date	Jan 9, 2024

Abstract

Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control are disclosed. Ingot puller apparatus that include a flange that extends radially from a silicon funnel or from a silicon feed tube to reduce backflow of gases from the silicon feed tube into the growth chamber are also disclosed.

First claim

What is claimed is:

1. A method for growing a single crystal silicon ingot in a continuous Czochralski process in an ingot puller apparatus, the ingot puller apparatus comprising a housing defining a growth chamber, a crucible assembly disposed in the growth chamber, a silicon feed tube for adding solid silicon to the crucible assembly, the method comprising:
forming a melt of silicon in a crucible assembly;
applying heat to the melt in a stabilization phase;
introducing an inert gas into the silicon feed tube at a first inert gas feed rate during the stabilization phase, inert gas being passing through the silicon feed tube and into the growth chamber during the stabilization phase;
contacting a surface of the melt with a seed crystal;
withdrawing a single crystal silicon ingot from the melt in an ingot growth phase; and
introducing the inert gas into the silicon feed tube at a second inert gas feed rate during the ingot growth phase, the first inert gas feed rate being greater than the second inert gas feed rate, inert gas being passing through the silicon feed tube and into the growth chamber during the ingot growth phase.

2. The method as set forth in claim 1 wherein a ratio of the first inert gas feed rate to the second inert gas feed rate is at least 5:4.

3. The method as set forth in claim 1 wherein the first inert gas feed rate is greater than 3 slpm and the second inert gas feed rate is from 1 slpm to 3 slpm.

4. The method as set forth in claim 1 wherein the inert gas is argon.

5. The method as set forth in claim 1 wherein the silicon feed tube is disposed below a funnel, the inert gas flowing through the funnel into the silicon feed tube.

6. The method as set forth in claim 5 wherein the ingot puller apparatus comprises a silicon feed system comprising a feed tray, the silicon feed system being sealed, the inert gas being introduced into the silicon feed system from an inert gas feed vessel.

7. The method as set forth in claim 1 wherein the crucible assembly comprises a weir and a sidewall that define an outer melt zone between the weir and the sidewall, the method comprising introducing silicon to the silicon feed tube while withdrawing a single crystal silicon ingot from the melt, silicon passing through the silicon feed tube and entering the outer melt zone.

8. The method as set forth in claim 1 wherein the stabilization phase extends at least between formation of the melt and contacting the surface of the melt with the seed crystal.

9. The method as set forth in claim 8 wherein the stabilization phase comprises meltdown of silicon disposed in the crucible assembly.

10. A method for growing a single crystal silicon ingot in a continuous Czochralski process in an ingot puller apparatus, the ingot puller apparatus comprising a housing defining a growth chamber, a crucible assembly disposed in the growth chamber, a silicon feed tube for adding solid silicon to the crucible assembly, the method comprising:
forming a melt of silicon in a crucible assembly;
applying heat to the melt in a stabilization phase;
introducing an inert gas into the silicon feed tube at a first inert gas feed rate during the stabilization phase, the first inert gas feed rate being between 2.5 and 3.5 slpm, inert gas being passing through the silicon feed tube and into the growth chamber during the stabilization phase;
contacting a surface of the melt with a seed crystal;
withdrawing a single crystal silicon ingot from the melt in an ingot growth phase; and
introducing the inert gas into the silicon feed tube at a second inert gas feed rate during the ingot growth phase, the second inert gas feed rate being between 2.5 and 3.5 slpm, inert gas passing through the silicon feed tube and into the growth chamber during the ingot growth phase.

11. The method as set forth in claim 10 wherein the inert gas is argon.

12. The method as set forth in claim 10 wherein the first and second inert gas feed rates are each about 3.0 slpm.

13. The method as set forth in claim 1 wherein a ratio of the first inert gas feed rate to the second inert gas feed rate is at least 4:3.

14. The method as set forth in claim 1 wherein a ratio of the first inert gas feed rate to the second inert gas feed rate is at least 2:1.

Assignees

• Globalwafers Co Ltd

Inventors

• Pannocchia Matteo
• Porrini Maria

Classifications

• C30B15/10 Primary

  Crucibles or containers for supporting the melt · CPC title

• C30B29/06 Primary

  Silicon · CPC title

• C30B15/12

  Double crucible methods · CPC title

• C30B15/20

  Controlling or regulating (controlling or regulating in general G05) · CPC title