Functional element and method of manufacturing functional element, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-11865829-B2
Application number	US-201816960309-A
Country	US
Kind code	B2
Filing date	Dec 26, 2018
Priority date	Jan 15, 2018
Publication date	Jan 9, 2024
Grant date	Jan 9, 2024

Abstract

There is provided a functional element that includes a first substrate, a second substrate disposed to face the first substrate, and a buffer layer provided between the first substrate and the second substrate. The buffer layer has, in a layer thereof, a distribution of concentration of a metallic element. The distribution changes in a film thickness direction.

First claim

The invention claimed is:

1. A method of manufacturing a functional element, the method comprising:
forming a first metal film on a first substrate, wherein
the first metal film includes a first buffer layer and a microcrystalline structure, and
the first buffer layer includes at least one of inorganic oxide, inorganic nitride, inorganic oxynitride, or inorganic fluoride;

forming a second metal film on a second substrate,
wherein the second metal film includes a microcrystalline structure; and

forming a buffer layer by performing heat treatment after bonding the first metal film and the second metal film, wherein
the heat treatment includes leaving the first substrate and the second substrate under an environment of 100° C. or higher and 800° C. or lower, and
the first metal film and the second metal film are oxidized based on the heat treatment.

2. The method of manufacturing the functional element according to claim 1 , wherein the first metal film and the second metal film are formed, and the first metal film and the second metal film are bonded, under a vacuum condition.

3. The method of manufacturing the functional element according to claim 2 , wherein the first metal film and the second metal film are formed, and the first metal film and the second metal film are bonded, in a same device.

4. The method of manufacturing the functional element according to claim 1 , wherein a thickness of the second metal film is between 0.2 nm and 10 nm.

5. The method of manufacturing the functional element according to claim 4 , wherein a thickness of the first buffer layer is between 2 nm and 20 μm.

6. The method of manufacturing the functional element according to claim 5 , wherein a thickness of the first metal film is less than the thickness of the first buffer layer.

7. The method of manufacturing the functional element according to claim 1 , wherein the buffer layer includes a metal oxide layer.

8. The method of manufacturing the functional element according to claim 1 , wherein the buffer layer has, in a layer thereof, a distribution of concentration of a metallic element, and the distribution changes in a film thickness direction.

9. The method of manufacturing the functional element according to claim 8 , wherein the distribution decreases toward respective interfaces with the first substrate and the second substrate.

10. The method of manufacturing the functional element according to claim 8 , wherein the distribution decreases from an interface with the first substrate toward an interface with the second substrate.

11. The method of manufacturing the functional element according to claim 8 , wherein the metallic element has a higher ability to bind oxygen than abilities of the inorganic oxide, the inorganic nitride, the inorganic oxynitride, and the inorganic fluoride.

12. The method of manufacturing the functional element according to claim 1 , wherein the buffer layer is light transmissive and an electrical insulator.

13. The method of manufacturing the functional element according to claim 1 , wherein each of the first substrate and the second substrate includes one of an inorganic material, a metallic material, or a plastic material.

14. The method of manufacturing the functional element according to claim 1 , wherein each of the first substrate and the second substrate is light-transmissive.

15. The method of manufacturing the functional element according to claim 1 , wherein each of the first substrate and the second substrate is non-light-transmissive.

16. The method of manufacturing the functional element according to claim 1 , wherein
the second metal film further includes a second buffer layer, and
the second buffer layer includes at least one of inorganic oxide, inorganic nitride, inorganic oxynitride, or inorganic fluoride.

Assignees

• Sony Corp
• Univ Tohoku

Inventors

• Sato Yoshihisa
• Yonezawa Gen
• Abe Shohei
• Takahashi Yuichi
• Shimatsu Takehito
• UOMOTO Miyuki

Classifications

• B32B7/04 Primary

  Interconnection of layers · CPC title

• B23K20/233

  without ferrous layer · CPC title

• C03C27/02

  by fusing glass directly to metal · CPC title

• C03C27/08

  with the aid of intervening metal · CPC title

• Y10T428/12597

  Noncrystalline silica or noncrystalline plural-oxide component [e.g., glass, etc.] · CPC title