Gate-all-around integrated circuit structures having insulator FIN on insulator substrate

Patent metadata

Field	Value
Publication number	US-11862702-B2
Application number	US-202217727603-A
Country	US
Kind code	B2
Filing date	Apr 22, 2022
Priority date	Mar 27, 2020
Publication date	Jan 2, 2024
Grant date	Jan 2, 2024

Abstract

Gate-all-around integrated circuit structures having an insulator fin on an insulator substrate, and methods of fabricating gate-all-around integrated circuit structures having an insulator fin on an insulator substrate, are described. For example, an integrated circuit structure includes an insulator fin on an insulator substrate. A vertical arrangement of horizontal semiconductor nanowires is over the insulator fin. A gate stack surrounds a channel region of the vertical arrangement of horizontal semiconductor nanowires, and the gate stack is overlying the insulator fin. A pair of epitaxial source or drain structures is at first and second ends of the vertical arrangement of horizontal semiconductor nanowires and at first and second ends of the insulator fin.

First claim

What is claimed is:

1. An integrated circuit structure, comprising:
an insulator fin directly on an insulator layer of an insulator substrate, the insulator fin having a bottommost surface;
a vertical arrangement of horizontal semiconductor nanowires over the insulator fin;
a gate stack surrounding a channel region of the vertical arrangement of horizontal semiconductor nanowires, and the gate stack overlying the insulator fin; and
a pair of epitaxial source or drain structures at first and second ends of the vertical arrangement of horizontal semiconductor nanowires, each of the pair of epitaxial source or drain structures having a bottommost surface at a different level than the bottommost surface of the insulator fin, and each of the pair of epitaxial source or drain structures in contact with a corresponding sidewall of the insulator fin, wherein each of the pair of epitaxial source or drain structures does not vertically overlap with the insulator fin.

2. The integrated circuit structure of claim 1 , wherein the insulator fin has a vertical thickness approximately the same as a vertical thickness of each of the nanowires of the vertical arrangement of horizontal semiconductor nanowires.

3. The integrated circuit structure of claim 1 , wherein the insulator fin has a vertical thickness greater than a vertical thickness of each of the nanowires of the vertical arrangement of horizontal semiconductor nanowires.

4. The integrated circuit structure of claim 1 , wherein the insulator fin has a vertical thickness less than a vertical thickness of each of the nanowires of the vertical arrangement of horizontal semiconductor nanowires.

5. The integrated circuit structure of claim 1 , wherein the insulator fin comprises silicon oxide, and the vertical arrangement of horizontal semiconductor nanowires comprises silicon.

6. The integrated circuit structure of claim 1 , wherein the vertical arrangement of horizontal semiconductor nanowires comprises silicon germanium or a group III-V material.

7. The integrated circuit structure of claim 1 , wherein the insulator substrate comprises a layer of silicon oxide, and the insulator fin is on the layer of silicon oxide.

8. The integrated circuit structure of claim 1 , wherein the insulator substrate comprises a layer of silicon nitride, and the insulator fin is on the layer of silicon nitride.

9. The integrated circuit structure of claim 1 , wherein a bottom of the pair of epitaxial source or drain structures is on the insulator substrate.

10. The integrated circuit structure of claim 1 , wherein the insulator substrate comprises a remnant catalyst material beneath the insulator fin.

11. The integrated circuit structure of claim 1 , wherein the pair of epitaxial source or drain structures is a pair of non-discrete epitaxial source or drain structures.

12. The integrated circuit structure of claim 1 , wherein the gate stack comprises a high-k gate dielectric layer and a metal gate electrode.

13. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
an insulator fin directly on an insulator layer of an insulator substrate, the insulator fin having a bottommost surface;
a vertical arrangement of horizontal semiconductor nanowires over the insulator fin;
a gate stack surrounding a channel region of the vertical arrangement of horizontal semiconductor nanowires, and the gate stack overlying the insulator fin; and
a pair of epitaxial source or drain structures at first and second ends of the vertical arrangement of horizontal semiconductor nanowires, each of the pair of epitaxial source or drain structures having a bottommost surface at a different level than the bottommost surface of the insulator fin, and each of the pair of epitaxial source or drain structures in contact with a corresponding sidewall of the insulator fin, wherein each of the pair of epitaxial source or drain structures does not vertically overlap with the insulator fin.

14. The computing device of claim 13 , further comprising:
a memory coupled to the board.

15. The computing device of claim 13 , further comprising:
a communication chip coupled to the board.

16. The computing device of claim 13 , further comprising:
a battery coupled to the board.

17. The computing device of claim 13 , further comprising:
a camera coupled to the board.

18. The computing device of claim 13 , further comprising:
a GPS coupled to the board.

19. The computing device of claim 13 , wherein the component is a packaged integrated circuit die.

20. The computing device of claim 13 , wherein the component is selected from the group consisting of a processor, a communications chip, and a digital signal processor.

Assignees

• Intel Corp

Inventors

• Lilak Aaron D
• Mehandru Rishabh
• Weber Cory
• Rachmady Willy
• Mishra Varun

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6349

  Deposition of epitaxial materials · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10D84/0158

  the components including FinFETs · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title