Target shaping
US-9611537-B2 · Apr 4, 2017 · US
Sputtering target
US11862443B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11862443-B2 |
| Application number | US-202017087333-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 2, 2020 |
| Priority date | Mar 29, 2017 |
| Publication date | Jan 2, 2024 |
| Grant date | Jan 2, 2024 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A sputtering target comprising a target material, wherein a sputtering face of the target material has a ramp provided to reduce a thickness of the target material at a position where erosion concentrates most intensively during sputtering.
First claim
Opening claim text (preview).
The invention claimed is: 1. A sputtering target comprising a target material, wherein a sputtering face of the target material has a circular shape and a ramp, wherein the target material includes a flat circular first region positioned at a center of the sputtering face, and a flat ring-shaped second region positioned around the first region, wherein the ramp has been provided so as to reduce a thickness of the target material, toward inner part of the sputtering face in the radial direction of the sputtering face between the first region and the second region, wherein a diameter of the first region accounts for 32% or more and 58% or less of a diameter of the sputtering face, and a thickness of the ramp is 0.5 mm to 5 mm, wherein the thickness of the first region is 10 mm to 30 mm, wherein the ring width of the second region is 5 mm to 75 mm. 2. A sputtering target comprising a target material, wherein a sputtering face of the target material has a circular shape and a ramp, wherein the target material includes a flat circular first region positioned at a center of the sputtering face, and a flat ring-shaped second region positioned around the first region, wherein the ramp has been provided so as to reduce a thickness of the target material, toward inner part of the sputtering face in the radial direction of the sputtering face between the first region and the second region, wherein a diameter of the first region accounts for 32% or more and less than 50% of a diameter of the sputtering face, and a thickness of the ramp is 0.5 mm to 5 mm, wherein the thickness of the first region is 10 mm to 30 mm, wherein the ring width of the second region is 5 mm to 75 mm. 3. The sputtering target according to any one of claims 1 to 2 , further comprising a backing plate. 4. The sputtering target according to claim 3 , wherein the thickness of the backing plate is 5 mm to 30 mm. 5. The sputtering target according to claim 3 , wherein the entire height of the sputtering target is 10 mm to 70 mm.
Assignees
Inventors
Classifications
- H01J37/3423Primary
Shape · CPC title
Metallic material, boron or silicon · CPC title
by cathodic sputtering · CPC title
- C23C14/3407Primary
Cathode assembly for sputtering apparatus, e.g. Target · CPC title
by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US11862443B2 cover?
- A sputtering target comprising a target material, wherein a sputtering face of the target material has a ramp provided to reduce a thickness of the target material at a position where erosion concentrates most intensively during sputtering.
- Who is the assignee on this patent?
- Sumitomo Chemical Co
- What technology area does this patent fall under?
- Primary CPC classification H01J37/3423. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 02 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).