Target shaping

Patent metadata

Field	Value
Publication number	US-9611537-B2
Application number	US-201113032922-A
Country	US
Kind code	B2
Filing date	Feb 23, 2011
Priority date	Feb 23, 2010
Publication date	Apr 4, 2017
Grant date	Apr 4, 2017

Abstract

A target for a physical vapor deposition system includes a top, a bottom, and a base. The base essentially is defined by the surface of the target to be sputtered. A first, inner ring and a second, outer ring extend from the base. Each ring has an inner side and an outer side, wherein sputtering is concentrated on the outer sides by means of a magnet arrangement adjacent to the target.

First claim

What is claimed is:

1. A target for a physical vapor deposition system, the target comprising:
a base ( 205 ) with a center and a rim ( 240 );
an inner ring ( 200 ) extending from the base ( 205 ) with an inner side ( 201 ) and an outer side ( 202 ), the inner side ( 201 ) of the inner ring ( 200 ) and the base ( 205 ) defining a first obtuse angle (C) opening toward the center of the base, the outer side ( 202 ) of the inner ring ( 200 ) and the base ( 205 ) defining a second obtuse angle (D) opening toward the rim ( 204 ) of the base ( 205 ); and
an outer ring ( 210 ) extending from the base ( 205 ) with an inner side ( 211 ) and an outer side ( 212 ), the inner side ( 211 ) of the outer ring ( 210 ) and the base ( 205 ) defining a third obtuse angle (E) opening toward the center of the base ( 205 ), the outer side ( 212 ) of the outer ring ( 210 ) and the base ( 205 ) defining a fourth obtuse angle (F) opening toward the rim ( 240 ) of the base ( 205 ),
wherein the inner ring ( 200 ) and the outer ring ( 210 ) are concentric,
wherein the fourth angle (F) is greater than the second angle (D), and
wherein the second angle (D) is greater than the third angle (E).

2. The target of claim 1 , wherein the second angle (D) is greater than the first angle (C).

3. The target of claim 1 , wherein the fourth angle (F) is greater than the third angle (E).

4. The target of claim 1 , wherein the outer side ( 212 ) of the outer ring ( 210 ) has a length that is greater than the inner side ( 211 ) of the outer ring ( 210 ).

5. The target of claim 1 , wherein a greater amount of erosion from sputtering is configured to occur on the outer side ( 212 ) of the outer ring ( 210 ) than the inner side ( 211 ) of the outer ring ( 210 ).

6. A sputter chamber comprising:
an enclosure;
a substrate support member;
a sputter target facing the substrate support member within the enclosure, the target having a base ( 205 ), an inner ring ( 200 ), and an outer ring ( 210 ), the base ( 205 ) having a center and a rim ( 240 ), the inner ring ( 200 ) extending from the base ( 205 ) with an inner side ( 201 ) and an outer side ( 202 ), the inner side ( 201 ) of the inner ring ( 200 ) and the base ( 205 ) defining a first obtuse angle (C) opening toward the center of the base ( 205 ), the outer side ( 202 ) of the inner ring ( 200 ) and the base ( 205 ) defining a second obtuse angle (D) opening toward the rim ( 240 ) of the base ( 205 ), the outer ring ( 210 ) extending from the base ( 205 ) with an inner side ( 211 ) and an outer side ( 212 ), the inner side ( 211 ) of the outer ring ( 210 ) and the base ( 205 ) defining a third obtuse angle (E) opening toward the center of the base ( 205 ), the outer side ( 212 ) of the outer ring ( 210 ) and the base ( 205 ) defining a fourth obtuse angle (F) opening toward the rim ( 240 ) of the base ( 205 ); and
an array of permanent magnets arranged behind the target, the permanent magnets being configured to establish a closed magnetic tunnel above a surface of the target,
wherein the inner ring ( 200 ) and the outer ring ( 210 ) are concentric,
wherein the fourth angle (F) is greater than the second angle (D), and
wherein the second angle (D) is greater than the third angle (E).

7. The sputter chamber of claim 6 , wherein the magnet arrangement concentrates the magnetic tunnel primarily on radii R 1 and R 2 , wherein R 1 corresponds to the radius of the inner ring ( 200 ) and R 2 corresponds to the radius of the outer ring ( 210 ).

8. The target of claim 1 , wherein a greater amount of erosion from sputtering is configured to occur on the outer side ( 212 ) of the outer ring ( 210 ) than the outer side ( 202 ) of the inner ring ( 200 ).

9. The target of claim 1 , wherein the second angle (D) is greater than the first angle (C),
wherein the fourth angle (F) is greater than the third angle (E),
wherein the outer side ( 212 ) of the outer ring ( 210 ) has a length that is greater than the inner side ( 211 ) of the outer ring ( 210 ),
wherein a greater amount of erosion from sputtering occurs on the outer side ( 212 ) of the outer ring ( 210 ) than the inner side ( 211 ) of the outer ring ( 210 ), and
wherein a greater amount of erosion from sputtering occurs on the outer side ( 212 ) of the outer ring ( 210 ) than the outer side ( 202 ) of the inner ring ( 200 ).

10. The sputter chamber of claim 7 , wherein the second angle (D) is greater than the first angle (C),
wherein the fourth angle (F) is greater than the third angle (E),
wherein the outer side ( 212 ) of the outer ring ( 210 ) has a length that is greater than the inner side ( 211 ) of the outer ring ( 210 ),
wherein a greater amount of erosion from sputtering occurs on the outer side ( 212 ) of the outer ring ( 210 ) than the inner side ( 211 ) of the outer ring ( 210 ), and
wherein a greater amount of erosion from sputtering occurs on the outer side ( 212 ) of the outer ring ( 210 ) than the outer side ( 202 ) of the inner ring ( 200 ).

Assignees

• Kadlec Stanislav
• Weichart Jürgen
• Evatec Ag

Inventors

• Kadlec Stanislav
• Weichart Jürgen

Classifications

• C23C14/3407 Primary

  Cathode assembly for sputtering apparatus, e.g. Target · CPC title

• H01J37/3405

  Magnetron sputtering · CPC title

• C23C14/35

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title

• H01J37/3423

  Shape · CPC title

• C23C14/54

  Controlling or regulating the coating process · CPC title