Light-emitting device and apparatus including the same

Patent metadata

Field	Value
Publication number	US-11856839-B2
Application number	US-202017038768-A
Country	US
Kind code	B2
Filing date	Sep 30, 2020
Priority date	Feb 26, 2020
Publication date	Dec 26, 2023
Grant date	Dec 26, 2023

Abstract

A light-emitting device and a method of manufacturing the same are provided. The light-emitting device may include a first electrode, a second electrode, and an interlayer located between the first electrode and the second electrode. The interlayer may include an emission layer that includes a first material, a second material, and a third material. The first material may include an inorganic semiconductor compound, an inorganic insulator compound, or any combination thereof. The second material may include a lanthanide metal. The third material may include an organic compound. An apparatus including the light-emitting device is provided.

First claim

What is claimed is:

1. A light-emitting device comprising:
a first electrode;
a second electrode; and
an interlayer located between the first electrode and the second electrode, wherein
the first electrode is an anode,
the second electrode is a cathode,
the interlayer comprises:
an emission layer; and
a hole transport region located between the first electrode and the emission layer, the emission layer comprises:
a first material including an inorganic semiconductor compound, an inorganic insulator compound, or any combination thereof;
a second material including a lanthanide metal; and
a third material that comprises an organic fluorescent dopant compound, an organometallic phosphorescent dopant compound, an organic delayed fluorescence dopant compound, or any combination thereof,

the hole transport region comprises a hole injection layer,
the hole injection layer comprises:
a fourth material; and
a fifth material,

the fourth material and the fifth material are different from each other,
the fourth material comprises a lanthanide metal halide, transition metal halide, a post-transition metal halide, a tellurium, a lanthanide metal telluride, transition metal telluride, a post-transition metal telluride, a lanthanide metal selenide, a transition metal selenide, a post-transition metal selenide, or any combination thereof, and
wherein for the fifth material;
the fifth material comprises a hole transport organic compound, and a volume ratio of the fourth material to the fifth material is in a range of about 1:99 to about 20:80; or
the fifth material comprises a post-transition metal halide, an alkali metal halide, an alkaline earth metal halide, a lanthanum metal halide, or any combination thereof, and the volume ratio of the fourth material to the fifth material is in a range of about 0:100 to about 50:50.

2. The light-emitting device of claim 1 , wherein
the first material comprises an alkali metal halide, an alkaline earth metal halide, a lanthanide metal halide, a transition metal halide, a post-transition metal halide, a tellurium, a lanthanide metal telluride, a transition metal telluride, a post-transition metal telluride, a lanthanide metal selenide, a transition metal selenide, a post-transition metal selenide, or any combination thereof, and
the second material comprises lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), or any combination thereof.

3. The light-emitting device of claim 1 , wherein the first material comprises NaI, KI, RbI, CsI, NaCl, KCl, RbCl, CsCl, NaBr, KBr, RbBr, CsBr, MgI 2 , CaI 2 , SrI 2 , BaI 2 , MgCl 2 , CaCl 2 , SrCl 2 , BaCl 2 , MgBr 2 , CaBr 2 , SrBr 2 , BaBr 2 , EuI 3 , YbI 3 , SmI 3 , TmI 3 , EuI 2 , YbI 2 , SmI 2 , TmI 2 , EuCl 3 , YbCl 3 , SmCl 3 , TmCl 3 , EuBr 3 , YbBr 3 , SmBr 3 , TmBr 3 , AgI, CuI, NiI 2 , CoI 2 , BiI 3 , PbI 2 , SnI 2 , Te, EuTe, YbTe, SmTe, TmTe, EuSe, YbSe, SmSe, TmSe, ZnTe, CoTe, ZnSe, CoSe, Bi 2 Te 3 , Bi 2 Se 3 , or any combination thereof.

4. The light-emitting device of claim 1 , wherein the first material comprises KI, RbI, CsI, CuI, or any combination thereof.

5. The light-emitting device of claim 1 , wherein the second material comprises Yb, Tm, Sm, Eu, Er, or any combination thereof.

6. The light-emitting device of claim 1 , wherein a volume of the first material is greater than or equal to a volume of the second material.

7. The light-emitting device of claim 1 , wherein
the hole trans ort region further comprises a hole transport layer, an electron blocking layer, or any combination thereof,
the interlayer further comprises an electron transport region located between the emission layer and the second electrode, and
the election transport region comprises a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

8. The light-emitting device of claim 7 , wherein
the electron injection layer comprises a sixth material, and
the sixth material comprises an alkali metal halide, an alkaline earth metal halide, a lanthanide metal halide, or any combination thereof.

9. The light-emitting device of claim 8 , wherein the electron injection layer consists of the sixth material.

10. The light-emitting device of claim 8 , wherein
the electron injection layer further comprises a seventh material,
the sixth material and the seventh material are different from each other, and
the seventh material comprises an alkali metal, an alkaline earth metal, a lanthanide metal, or any combination thereof.

11. The light-emitting device of claim 10 , wherein
the sixth material is represented by Formula X, and
the seventh material is represented by Formula Y:
A n B m   <Formula X>

C  <Formula Y>

wherein in Formulae X and Y,
each of A and C independently comprise an alkali metal, an alkaline earth metal, a lanthanide metal, or any combination thereof,
B is a halogen,
n and m are each independently an integer of 1 or more that makes the sixth material neutral, and
A and C are different from each other.

12. The light-emitting device of claim 7 , wherein
the hole transport layer is in direct contact with the emission layer,
the hole transport layer comprises:
an eighth material; and
a ninth material,

the eighth material and the ninth material are different from each other,
the eighth material comprises a hole transport organic compound, and
the ninth material comprises an alkali metal halide, an alkaline earth metal halide, a lanthanide metal halide, or any combination thereof.

13. The light-emitting device of claim 7 , wherein
the electron transport layer is in direct contact with the emission layer,
the electron transport layer comprises:
a tenth material; and
an eleventh material,

the tenth material and the eleventh material are different from each other,
the tenth material comprises an electron transport organic compound, and
the eleventh material comprises an alkali metal halide, an alkaline earth metal halide, a lanthanide metal halide, or any combination thereof.

14. An apparatus comprising:
a thin-film transistor comprising a source electrode, a drain electrode, and an activation layer; and
a light-emitting device of claim 1 ,
wherein the first electrode of the light-emitting device is electrically connected with one of the source electrode and the drain electrode of the thin-film transistor.

15. The apparatus of claim 14 , further comprising a color filter located on a path through which light from the light-emitting device is emitted.

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Dongchan
• Moon Jiyoung
• Yoon Jihwan
• Lee Donghui
• Lee Jihye
• Lee Chulsoon
• Lee Hakchoong
• Lee Haemyeong
• Cho Yoonhyeung
• Han Wonsuk

Classifications

• H10K85/658

  Organoboranes · CPC title

• H10K59/12

  Active-matrix OLED [AMOLED] displays · CPC title

• H10K50/171

  Electron injection layers · CPC title

• H10K85/342 Primary

  comprising iridium · CPC title

• C09K11/025 Primary

  non-luminescent particle coatings or suspension media · CPC title