Electronic device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11848366-B2
Application number	US-202117468098-A
Country	US
Kind code	B2
Filing date	Sep 7, 2021
Priority date	Dec 23, 2019
Publication date	Dec 19, 2023
Grant date	Dec 19, 2023

Abstract

Provided are an electronic device including a dielectric layer having an adjusted crystal orientation and a method of manufacturing the electronic device. The electronic device includes a seed layer provided on a substrate and a dielectric layer provided on the seed layer. The seed layer includes crystal grains having aligned crystal orientations. The dielectric layer includes crystal grains having crystal orientations aligned in the same direction as the crystal orientations of the seed layer.

First claim

What is claimed is:

1. A ferroelectric thin film structure comprising:
a seed layer on a substrate, the seed layer including crystal grains having aligned crystal orientations; and
a dielectric layer on the seed layer, the dielectric layer comprising a ferroelectric and including crystal grains having crystal orientations aligned in the same direction as the crystal orientations of the seed layer,
wherein a material of the seed layer is selected such that the aligned crystal orientations of the seed layer are stable at an annealing temperature of the dielectric layer.

2. A ferroelectric thin film structure of claim 1 , wherein the seed layer comprises at least one of an oxide, a nitride, a chalcogenide, and a two-dimensional insulator material.

3. A ferroelectric thin film structure of claim 2 , wherein the oxide comprises at least one oxide of Y, Si, Al, Hf, Zr, La, Mo, W, Ru, and Nb.

4. A ferroelectric thin film structure of claim 3 , wherein the oxide further comprises a dopant.

5. A ferroelectric thin film structure of claim 1 , wherein the seed layer has a thickness of about 0.5 nm to about 3 nm.

6. A ferroelectric thin film structure of claim 1 , wherein the dielectric layer comprises at least one oxide of Hf, Si, Al, Zr, Y, La, Gd, and Sr.

7. A ferroelectric thin film structure of claim 6 , wherein the dielectric layer further comprises a dopant.

8. A ferroelectric thin film structure of claim 1 , wherein the dielectric layer has a thickness of about 0.5 nm to about 20 nm.

9. A ferroelectric thin film structure of claim 1 , wherein the crystal orientations of the crystal grains of the seed layer and of the dielectric layer have a <111> orientation.

10. A ferroelectric thin film structure of claim 1 , further comprising:
an amorphous dielectric layer on the seed layer.

11. An electronic device comprising the ferroelectric thin film structure of claim 1 .

12. The electronic device of claim 11 , wherein the electronic device is a transistor or a capacitor.

13. An electronic device comprising:
a substrate;
a first dielectric layer over the substrate, the first dielectric layer including crystal grains having aligned crystal orientations;
a second dielectric layer over the substrate, the second dielectric layer including crystal grains having crystal orientations aligned in the substantially same direction as the crystal orientations of the first dielectric layer; and
an electrode over the second dielectric layer;
wherein the first dielectric layer has a lattice parameter different from a lattice parameter of the second dielectric layer, and
the first dielectric layer has a thickness of about 0.5 nm to about 3 nm and the second dielectric layer has a thickness of about 0.5 nm to about 20 nm, and
wherein a material of the first dielectric layer is selected such that the aligned crystal orientations of the first dielectric layer are stable at an annealing temperature of the second dielectric layer.

14. The electronic device of claim 13 , wherein the first dielectric layer comprises at least one of an oxide, a nitride, a chalcogenide, or a two-dimensional insulator material.

15. The electronic device of claim 13 , wherein the second dielectric layer comprises a ferroelectric.

16. The electronic device of claim 15 , wherein the second dielectric layer comprises at least one oxide of Hf, Si, Al, Zr, Y, La, Gd, or Sr.

17. The electronic device of claim 16 , wherein the second dielectric layer further comprises a dopant.

18. The electronic device of claim 13 , wherein the crystal orientations of the crystal grains of the first dielectric layer and of the second dielectric layer have a <111> orientation.

19. The electronic device of claim 13 , further comprising:
an amorphous dielectric layer on the first dielectric layer.

20. A ferroelectric thin film structure comprising:
a seed layer on a substrate, the seed layer including crystal grains having aligned crystal orientations;
an electrode; and
a dielectric layer between the seed layer and the electrode, the dielectric layer comprising a ferroelectric and including crystal grains having crystal orientations aligned in the same direction as the crystal orientations of the seed layer,
wherein the seed layer comprises at least one of a nitride, a chalcogenide, and a two-dimensional insulator material.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Moon Taehwan
• Lee Eunha
• Kim Junghwa
• Lee Hyangsook
• Jo Sanghyun
• Heo Jinseong

Classifications

• H10P14/6544

  to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer · CPC title

• H10P14/6506

  Formation of intermediate materials · CPC title

• H10D64/01332

  Making the insulator · CPC title

• H10D64/0134

  with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title