Methods of making semiconductor X-ray detector

Patent metadata

Field	Value
Publication number	US-11848347-B2
Application number	US-201916709723-A
Country	US
Kind code	B2
Filing date	Dec 10, 2019
Priority date	Jan 23, 2017
Publication date	Dec 19, 2023
Grant date	Dec 19, 2023

Abstract

Disclosed herein is an image sensor and a method of making the image sensor. The image sensor may comprise one or more packages of semiconductor radiation detectors. Each of the one or more packages may comprise a radiation detector that comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer. The radiation absorption layer may be continuous along the first strip of semiconductor wafer with no coverage gap. The first strip and the second strip may be longitudinally aligned and bonded together. The radiation detector may be mounted on a printed circuit board (PCB) and electrically connected to the PCB close to an edge of the radiation detector.

First claim

What is claimed is:

1. An image sensor comprising:
one or more packages of semiconductor radiation detectors;
wherein each of the one or more packages comprises a radiation detector,
wherein the radiation detector comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer,
wherein the radiation absorption layer is continuous along the first strip of semiconductor wafer with no coverage gap,
wherein the first strip and the second strip are longitudinally aligned and bonded together;
wherein the radiation absorption layer is configured to detect one of particle radiation including alpha particles, beta particles and neutron particles.

2. The image sensor of claim 1 , wherein the electronics layer comprises transmission lines at a first surface of the second strip of semiconductor wafer bonded to the first strip of semiconductor wafer.

3. The image sensor of claim 2 , wherein the electronics layer comprises vias electrically connected to the transmission lines.

4. The image sensor of claim 3 , wherein the second strip of semiconductor wafer comprise a redistribution layer (RDL) electrically connected to the vias.

5. The image sensor of claim 2 , wherein the radiation absorption layer comprises electrical connections electrically connected to the electrical contacts of the electronics layer.

6. The image sensor of claim 5 , wherein the electrical connections comprise doped regions in the first strip of semiconductor wafer.

7. The image sensor of claim 1 , wherein the first group of radiation detectors at least partially overlap with the second group of radiation detectors.

8. The image sensor of claim 1 , wherein the radiation absorption layer is configured to detect one of electromagnetic radiation including ultraviolet (UV), X-ray, gamma ray.

9. An image sensor comprising:
one or more packages of semiconductor radiation detectors;
wherein each of the one or more packages comprises a radiation detector;
wherein the radiation detector comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer;
wherein the radiation absorption layer is continuous along the first strip of semiconductor wafer with no coverage gap;
wherein the first strip and the second strip are longitudinally aligned and bonded together;
wherein the radiation absorption layer comprises an electrode and the electronics layer comprises an electronics system, the electronics system comprises:
a first voltage comparator configured to compare a voltage of the electrode to a first threshold;
a second voltage comparator configured to compare the voltage to a second threshold;
a counter configured to register a number of radiation photons or particles reaching the radiation absorption layer;
a controller;
wherein the controller is configured to start a time delay from a time at which the first voltage comparator determines that an absolute value of the voltage equals or exceeds an absolute value of the first threshold;
wherein the controller is configured to activate the second voltage comparator during the time delay;
wherein the controller is configured to cause the number registered by the counter to increase by one, if the second voltage comparator determines that an absolute value of the voltage equals or exceeds an absolute value of the second threshold.

10. The image sensor of claim 9 , wherein the electronics system further comprises a capacitor module electrically connected to the electrode, wherein the capacitor module is configured to collect charge carriers from the electrode.

11. The image sensor of claim 9 , wherein the controller is configured to activate the second voltage comparator at a beginning or expiration of the time delay.

12. The image sensor of claim 9 , wherein the electronics system further comprises a voltmeter, wherein the controller is configured to cause the voltmeter to measure the voltage upon expiration of the time delay.

13. The image sensor of claim 9 , wherein the controller is configured to determine an X-ray photon energy based on a value of the voltage measured upon expiration of the time delay.

14. The image sensor of claim 9 , wherein the controller is configured to connect the electrode to an electrical ground.

15. The image sensor of claim 9 , wherein a rate of change of the voltage is substantially zero at expiration of the time delay.

16. The image sensor of claim 9 , wherein a rate of change of the voltage is substantially non-zero at expiration of the time delay.

Assignees

• Shenzhen Xpectvision Tech Co Ltd

Inventors

• Cao Peiyan
• Song Chongshen
• Liu Yurun

Classifications

• H04N25/69

  SSIS comprising testing or correcting structures for circuits other than pixel cells · CPC title

• H04N25/30

  for transforming X-rays into image signals · CPC title

• H10F39/1895

  of the hybrid type · CPC title

• H10F39/198

  Contact-type image sensors [CIS] · CPC title

• H10F39/014

  of CMOS image sensors · CPC title