Method of Making Semiconductor X-ray Detectors
US-2018017687-A1 · Jan 18, 2018 · US
US10007009B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10007009-B2 |
| Application number | US-201515122456-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 7, 2015 |
| Priority date | Apr 7, 2015 |
| Publication date | Jun 26, 2018 |
| Grant date | Jun 26, 2018 |
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Disclosed herein is an apparatus suitable for detecting x-ray, comprising: an X-ray absorption layer comprising an electrode; an electronics layer, the electronics layer comprising: a substrate having a first surface and a second surface, an electronics system in or on the substrate, an electric contact on the first surface, a via, and a redistribution layer (RDL) on the second surface; wherein the RDL comprises a transmission line; wherein the via extends from the first surface to the second surface; wherein the electrode is electrically connected to the electric contact; wherein the electronics system is electrically connected to the electric contact and the transmission line through the via.
Opening claim text (preview).
What is claimed is: 1. An apparatus suitable for detecting x-ray, comprising: an X-ray absorption layer comprising an electrode; an electronics layer, the electronics layer comprising: a substrate having a first surface and a second surface, an electronics system in or on the substrate, an electric contact on the first surface, a via, and a redistribution layer (RDL) on the second surface; wherein the RDL comprises a transmission line; wherein the via extends from the first surface to the second surface; wherein the electrode is electrically connected to the electric contact; wherein the electronics system is electrically connected to the electric contact and the transmission line through the via; wherein the electronics system comprises: a first voltage comparator configured to compare a voltage of the electrode to a first threshold; a second voltage comparator configured to compare the voltage to a second threshold; a counter configured to register a number of X-ray photons reaching the X-ray absorption layer; a controller; wherein the controller is configured to start a time delay from a time at which the first voltage comparator determines that an absolute value of the voltage equals or exceeds an absolute value of the first threshold; wherein the controller is configured to activate the second voltage comparator during the time delay; wherein the controller is configured to cause the number registered by the counter to increase by one, if the second voltage comparator determines that an absolute value of the voltage equals or exceeds an absolute value of the second threshold. 2. The apparatus of claim 1 , wherein the substrate has a thickness of 200 μm or less. 3. The apparatus of claim 1 , further comprising a capacitor module electrically connected to the electrode, wherein the capacitor module is configured to collect charge carriers from the electrode. 4. The apparatus of claim 1 , wherein the controller is configured to activate the second voltage comparator at a beginning or expiration of the time delay. 5. The apparatus of claim 1 , further comprising a voltmeter, wherein the controller is configured to cause the voltmeter to measure the voltage upon expiration of the time delay. 6. The apparatus of claim 5 , wherein the controller is configured to determine an X-ray photon energy based on a value of the voltage measured upon expiration of the time delay. 7. The apparatus of claim 1 , wherein the controller is configured to connect the electrode to an electrical ground. 8. The apparatus of claim 1 , wherein a rate of change of the voltage is substantially zero at expiration of the time delay. 9. The apparatus of claim 1 , wherein a rate of change of the voltage is substantially non-zero at expiration of the time delay. 10. The apparatus of claim 1 , wherein the X-ray absorption layer comprises a diode. 11. The apparatus of claim 1 , wherein the X-ray absorption layer comprises silicon, germanium, GaAs, CdTe, CdZnTe, or a combination thereof. 12. The apparatus of claim 1 , wherein the apparatus does not comprise a scintillator. 13. The apparatus of claim 1 , wherein the apparatus comprises an array of pixels. 14. A system comprising the apparatus of claim 1 and an X-ray source, wherein the system is configured to perform X-ray radiography on human chest or abdomen. 15. A system comprising the apparatus of claim 1 and an X-ray source, wherein the system is configured to perform X-ray radiography on human mouth. 16. A cargo scanning or non-intrusive inspection (NII) system, comprising the apparatus of claim 1 and an X-ray source, wherein the cargo scanning or non-intrusive inspection (NII) system is configured to form an image using backscattered X-ray. 17. A cargo scanning or non-intrusive inspection (NII) system, comprising the apparatus of claim 1 and an X-ray source, wherein the cargo scanning or non-intrusive inspection (NII) system is configured to form an image using X-ray transmitted through an object inspected. 18. A full-body scanner system comprising the apparatus of claim 1 and an X-ray source. 19. An X-ray computed tomography (X-ray CT) system comprising the apparatus of claim 1 and an X-ray source. 20. An electron microscope comprising the apparatus of claim 1 , an electron source and an electronic optical system. 21. A system comprising the apparatus of claim 1 , wherein the system is an X-ray telescope, or an X-ray microscopy, or wherein the system is configured to perform mammography, industrial defect detection, microradiography, casting inspection, weld inspection, or digital subtraction angiography. 22. The apparatus of claim 1 , wherein the controller is configured to deactivate the first voltage comparator at a beginning of the time delay. 23. The apparatus of claim 1 , wherein the controller is configured to deactivate the second voltage comparator at expiration of the time delay or at a time when the second voltage comparator determines that the absolute value of the voltage equals or exceeds the absolute value of the second threshold, or a time in between. 24. The apparatus of claim 1 , wherein the electronics layer further comprises a peripheral circuit arranged on the first surface. 25. The apparatus of claim 1 , wherein the electronics layer further comprises a peripheral circuit arranged between the first surface and the second surface. 26. A system comprising a stack of two layers, each layer comprising a plurality of the apparatuses of claim 1 arranged in an array, wherein the arrays of the two layers are staggered relative to one another. 27. A method comprising: obtaining an X-ray absorption layer comprising an electrode; obtaining an electronics layer, the electronics layer comprising: a substrate having a first surface and a second surface, an electronics system in or on the substrate, an electric contact on the first surface, a via, and a redistribution layer (RDL) on the second surface; bonding the X-ray absorption layer and the electronics layer such that the electrode is electrically connected to the electric contact; wherein the RDL comprises a transmission line; wherein the via extends from the first surface to the second surface; wherein the electronics system is electrically connected to the electric contact and the transmission line through the via.
Detector read-out circuitry (for processing gain or off-set correction H04N) · CPC title
Gamma- or X-ray microscopes · CPC title
Transmission computed tomography [CT] · CPC title
Physics · mapped topic
the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation · CPC title
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