Latent read disturb mitigation in memory devices

US11847335B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11847335-B2
Application numberUS-202117212437-A
CountryUS
Kind codeB2
Filing dateMar 25, 2021
Priority dateMar 25, 2021
Publication dateDec 19, 2023
Grant dateDec 19, 2023

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A trigger condition associated with latent read disturb in a memory device is detected. In response to detecting the trigger condition associated with latent read disturb, one or more blocks in the memory device that are impacted by the trigger condition are placed in a stable state to mitigate latent read disturb in the one or more blocks.

First claim

Opening claim text (preview).

What is claimed is: 1. A system comprising: a memory device; and a processing device, operatively coupled with the memory device, to perform operations comprising: detecting a power state transition of a block of the memory device based on receiving, from the memory device, a signal indicating that the block is being placed in a low power state based on an anticipated idling of the block; and in response to detecting the power state transition of the block, placing the block of the memory device in a stable state to mitigate latent read disturb in the block , the placing of the block in the stable state comprising sending a command to the memory device that causes the memory device to ground word lines in the block. 2. The system of claim 1 , wherein: the block is a first block; and the operations further comprise: detecting a background scan being performed on a second block; and placing the second block in a stable state in response to detecting the background scan being performed on the second block. 3. The system of claim 2 , wherein detecting the background scan being performed on the second block comprises detecting a background scan being performed on a page in the second block. 4. The system of claim 1 , wherein: the block is a first block; and the operations further comprise: detecting an impending power down event at the memory device; and placing a second block in a stable state in response to detecting the impending power down event. 5. The system of claim 4 , wherein: the signal is a first signal; the detecting of the impending power down even is based on receiving a second signal indicating that power down of the memory device is imminent. 6. The system of claim 1 , wherein the word lines in the block are floating prior to being grounded. 7. The system of claim 1 , wherein: the memory device comprises a set of blocks; and the placing of the block of the memory device in the stable state comprises placing the set of blocks in the stable state based on detecting the power state transition . 8. A method comprising: detecting, by a processing device, a power state transition of a block of a memory device based on receiving, from the memory device, a signal indicating that the block is being placed in a low power state based on an anticipated idling of the block; and in response to detecting the power state transition of the block, placing, by the processing device, the block of the memory device in a stable state to mitigate latent read disturb in the block , the placing of the block in the stable state comprising sending a command to the memory device that causes the memory device to ground word lines in the block . 9. The method of claim 8 , wherein: the block is a first block; and the method further comprises: detecting a background scan being performed on a second block; and placing the second block in a stable state in response to detecting the background scan being performed on the second block. 10. The method of claim 9 , wherein the detecting of the background scan being performed on the second block includes accessing error event data. 11. The method of claim 8 , wherein the word lines in the block are floating prior to being grounded. 12. The method of claim 8 , wherein the memory device grounds the word lines in the block in response to the command. 13. The method of claim 8 , wherein: the memory device comprises a set of blocks; and the placing of the block of the memory device in the stable state comprises placing the set of blocks in the stable state . 14. The method of claim 8 , wherein: the memory device comprises a set of blocks; and the placing of the block of the memory device in the stable state comprises placing a sub-set of blocks from the set of blocks in the stable state . 15. A computer-readable storage medium comprising instructions that, when executed by a processing device, configure the processing device to perform operations comprising: detecting a power state transition of a block of a memory device based on receiving, from the memory device, a signal indicating that the block is being placed in a low power state based on an anticipated idling of the block; and in response to detecting the power state transition of the block, placing the block in a stable state to mitigate latent read disturb in the block, the placing of the block in the stable state comprising sending a command to the memory device that causes the memory device to ground word lines in the block. 16. The computer-readable storage medium of claim 15 , wherein: the block is a first block; and the operations further comprise: detecting a background scan being performed on a second block; and placing the second block in a stable state in response to detecting the background scan being performed on the second block. 17. The computer-readable storage medium of claim 16 , wherein_the detecting of the background scan being performed on the second block includes accessing error event data. 18. The computer-readable storage medium of claim 15 , wherein the word lines in the block are floating prior to being grounded. 19. The computer-readable storage medium of claim 15 , wherein: the memory device comprises a set of blocks; and the placing of the block of the memory device in the stable state comprises placing the set of blocks in the stable state. 20. The computer-readable storage medium of claim 15 , wherein: the memory device comprises a set of blocks; and the placing of the block of the memory device in the stable state comprises placing a sub-set of blocks from the set of blocks in the stable state.

Assignees

Inventors

Classifications

  • G06F3/0647Primary

    Migration mechanisms · CPC title

  • Improving or facilitating administration, e.g. storage management · CPC title

  • Power saving in storage systems · CPC title

  • Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP] · CPC title

  • G11C29/12Primary

    Built-in arrangements for testing, e.g. built-in self testing [BIST] {or interconnection details} · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11847335B2 cover?
A trigger condition associated with latent read disturb in a memory device is detected. In response to detecting the trigger condition associated with latent read disturb, one or more blocks in the memory device that are impacted by the trigger condition are placed in a stable state to mitigate latent read disturb in the one or more blocks.
Who is the assignee on this patent?
Micron Technology Inc
What technology area does this patent fall under?
Primary CPC classification G06F3/0647. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Dec 19 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).