Cleaning liquid composition and cleaning method using same

Patent metadata

Field	Value
Publication number	US-11845912-B2
Application number	US-201917416420-A
Country	US
Kind code	B2
Filing date	Aug 7, 2019
Priority date	Dec 21, 2018
Publication date	Dec 19, 2023
Grant date	Dec 19, 2023

Abstract

The present disclosure relates to a cleaning liquid composition and a cleaning method using the same. A polishing slurry composition according to an embodiment of the present disclosure includes: a chelating agent containing an organic salt; and an anionic surfactant.

First claim

The invention claimed is:

1. A cleaning liquid composition comprising:
a chelating agent comprising an organic salt;
an anionic surfactant;
an auxiliary chelating agent comprising an organic acid,
wherein the chelating agent comprises:
at least one organic salt selected from the group consisting of ammonium acetate, ammonium bicarbonate, ammonium carbonate, ammonium citrate, ammonium hydrogen citrate, ammonium sulfate, and diammonium hydrogen phosphate,

wherein the anionic surfactant comprises alkyl aryl sulfonate, alkyl ether sulfonate, polyoxyethylene alkyl aryl sulfonate, or polystyrene sulfonate,
wherein the auxiliary chelating agent comprises citric acid or a combination of citric acid and glutamic acid, 1-hydroxyethylidene-1,1′-diphosphonic acid (HEDPO), or ethylenediaminetetra(methylenephosphonic acid) (EDTPO).

2. The cleaning liquid composition of claim 1 , wherein the organic salt is present in an amount of 0.1% by weight (wt %) to 10 wt % in the cleaning liquid composition.

3. The cleaning liquid composition of claim 1 , wherein the organic acid is present in an amount of 0.1 wt % to 10 wt % in the cleaning liquid composition.

4. The cleaning liquid composition of claim 1 , wherein the anionic surfactant is present in an amount of 0.1 wt % to 10 wt % in the cleaning liquid composition.

5. The cleaning liquid composition of claim 1 , wherein pH of the cleaning liquid composition ranges from 3 to 7.

6. The cleaning liquid composition of claim 1 , wherein the cleaning liquid composition is used to clean a surface of a wafer for a semiconductor device that includes a silicon nitride film, a silicon oxide film, or both, after polishing of the wafer.

7. The cleaning liquid composition of claim 6 , wherein when cleaning is performed using the cleaning liquid composition, a defect reduction rate for a silicon nitride film is 75% or greater, and a defect reduction rate for a silicon oxide film is 50% or greater.

8. A cleaning method, wherein a wafer for a semiconductor device is cleaned using the cleaning liquid composition of claim 1 after chemical mechanical polishing (CMP) of the wafer.

Assignees

• Kctech Co Ltd

Inventors

• Jung Ga Young
• Jeong Yong Ho
• Park Kun Hee
• Kim Young Gon
• Yoon Young Ho
• Yoon Young Lok

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• C11D3/2075 Primary

  Carboxylic acids-salts thereof · CPC title

• C11D1/146

  Sulfuric acid esters · CPC title