Devices, systems, and methods for detecting radiation with Schottky diodes for enhanced in-core measurements

Patent metadata

Field	Value
Publication number	US-11841469-B2
Application number	US-202017754408-A
Country	US
Kind code	B2
Filing date	Oct 1, 2020
Priority date	Oct 4, 2019
Publication date	Dec 12, 2023
Grant date	Dec 12, 2023

Abstract

An in-core detector configured to measure a power distribution in a nuclear reactor is disclosed herein. The in-core detector includes a housing configured to be placed within a predetermined location of the nuclear reactor and a plurality of a gamma detectors. Each gamma detector of the plurality of gamma detectors includes a Schottky diode including an active semiconductor region and a Schottky contact, an Ohmic contact, a photoelectron source material configured to transfer electrons to the active region upon contact with gamma radiation, and a first and second lead. The plurality of gamma detectors are positioned within the housing such that each gamma detector of the plurality of gamma detectors is radially offset relative to an adjacent gamma detector of the plurality of gamma detectors, such that the first and second leads of each gamma detector are offset relative to the first and second leads of the adjacent gamma detector.

First claim

What is claimed is:

1. An in-core detector configured to measure a power distribution in a nuclear reactor, the in-core detector comprising:
a housing configured to be placed within a predetermined location of the nuclear reactor;
a plurality of a gamma detectors, wherein each gamma detector of the plurality of gamma detectors comprises:
a Schottky diode having an active semiconductor region and a Schottky contact over at least a portion of the active semiconductor region;
an Ohmic contact under at least a portion of the active semiconductor region;
a photoelectron source material configured to transfer electrons to the active region of the Schottky diode upon contact with gamma radiation emitted by the nuclear reactor;
a first lead extending proximate the source material; and
a second lead extending proximate the Ohmic contact layer;

wherein the plurality of gamma detectors are positioned within the housing such that each gamma detector of the plurality of gamma detectors is radially offset relative to an adjacent gamma detector of the plurality of gamma detectors, such that the first and second leads of each gamma detector are offset relative to the first and second leads of the adjacent gamma detector.

2. The in-core detector of claim 1 , wherein the housing comprises a tube extending in an axial direction, wherein the tube is configured to define an internal cavity, and wherein the plurality of gamma detectors are axially stacked within the internal cavity.

3. The in-core detector of claim 1 , wherein the photoelectron source material is positioned a distance away from the Schottky contact, thereby creating a gap between the photoelectron source material and the Schottky contact, wherein the dimension can be adjusted to attenuate the gap, and wherein attenuating the gap attenuates the amount of energy detected by each gamma detector of the plurality of gamma detectors.

4. The in-core detector of claim 3 , wherein the distance is predetermined to create a gap between the Schottky contact and the photoelectron source material, such that each gamma detector of the plurality of gamma detectors is configured to detect gamma radiation greater than or equal to 5 MeV.

5. The in-core detector of claim 1 , wherein each gamma detector of the plurality of gamma detectors further comprises:
a fluid interposed between the Schottky contact and the photoelectron source material, wherein the fluid comprises a predetermined effective atomic number and a negligible conductance; and
an intermediate material covering the Schottky diode, the Ohmic contact, the photoelectron source material, at least a portion of the first lead, and at least a portion of the second lead, wherein the intermediate layer is configured to electrically isolate each gamma detector of the plurality of gamma detectors.

6. The in-core detector of claim 5 , wherein the fluid interposed between the Schottky contact and the photoelectron source material comprises air.

7. The in-core detector of claim 5 , wherein the intermediate layer comprises at least one of aluminum oxide and magnesium oxide, or combinations thereof.

8. The in-core detector of claim 5 , wherein each gamma detector of the plurality of gamma detectors further comprises an outer material covering the intermediate material, wherein the outer material is configured to provide each gamma detector of the plurality of gamma detectors structural integrity.

9. The in-core detector of claim 8 , wherein the outer material comprises stainless steel.

10. The in-core detector of claim 1 , wherein the photoelectron source material comprises platinum.

11. The in-core detector of claim 1 , wherein the active semiconductor region comprises silicon carbide.

12. An in-core detector system configured to measure gamma radiation emitted by a nuclear reactor, the in-core detector system comprising:
a housing configured to be placed in a predetermined location within the nuclear reactor, wherein the housing extends in an axial dimension;
a plurality of gamma detectors stacked axially one on top of another within the housing, wherein each gamma detector of the plurality of gamma detectors comprises:
a Schottky diode comprising an active semiconductor region and a Schottky contact over at least a portion of the active semiconductor region; and
a photoelectron source material, wherein the photoelectron source material is configured to produce energy that penetrates the active region when it contacts gamma radiation emitted by the nuclear reactor.

13. The in-core detector of claim 12 , wherein the housing comprises a tube extending in an axial direction, wherein the tube is configured to define an internal cavity, and wherein the plurality of gamma detectors are axially stacked within the internal cavity.

14. The in-core detector of claim 12 , wherein the photoelectron source material is positioned a distance away from the Schottky contact, thereby creating a gap between the photoelectron source material and the Schottky contact, wherein the dimension can be adjusted to attenuate the gap, and wherein attenuating the gap attenuates the amount of energy detected by each gamma detector of the plurality of gamma detectors.

15. The in-core detector system of claim 12 , wherein each gamma detector of the plurality of gamma detectors further comprises a first lead and a second lead, and wherein the first lead and second lead are positioned a predetermined distance from each other, and wherein the predetermined distance is associated with a difference in voltage generated by each gamma detector of the plurality of gamma detectors.

16. A gamma detector of a plurality of gamma detectors stacked axially one on top of another within a housing of an in-core detector system, wherein the plurality of gamma detectors are configured to measure gamma radiation emitted by a nuclear reactor, and wherein each gamma detector of the plurality of gamma detectors comprises:
a Schottky diode comprising an active semiconductor region and a Schottky contact over at least a portion of the active semiconductor region;
a conductive material configured to generate a charge within the active semiconductor region; and
a photoelectron source material, wherein the photoelectron source material is configured to produce energy that penetrates the active region when it contacts gamma radiation emitted by the nuclear reactor, wherein the photoelectron source material is positioned a distance away from the Schottky contact, thereby creating a gap between the photoelectron source material and the Schottky contact.

17. The gamma detector of claim 16 , wherein the dimension can be adjusted to attenuate the gap, and wherein attenuating the gap attenuates the amount of energy detected by each gamma detector of the plurality of gamma detectors.

18. The gamma detector of claim 16 , wherein the conductive material is configured to produce an electron differential within the active semiconductor region and thus, a reverse bias.

19. The gamma detector of claim 16 further comprising an insulating material positioned between the Schottky contact and the conductive material, wherein the insulating material is configured to prevent an unintentional discharge of electrons.

20. The gamma detector of claim 16 further comprising a layer of fluid disposed between the Schottky contact and the photoelectron source material, wherein the fluid comprises a predetermined effective atomic number and a negligible conductance.

Assignees

• Westinghouse Electric Co Llc

Inventors

• Heibel Michael D

Classifications

• H10D8/60

  Schottky-barrier diodes · CPC title

• G01T1/248 Primary

  Silicon photomultipliers [SiPM], e.g. an avalanche photodiode [APD] array on a common Si substrate · CPC title

• G01T1/366

  with semi-conductor detectors · CPC title

• G21C17/108 Primary

  Measuring reactor flux · CPC title

• H01L29/872

  Electricity · mapped topic