Layered GaN and GaN nanosheet, and electrical device using the same

Patent metadata

Field	Value
Publication number	US-11840458-B2
Application number	US-202017111087-A
Country	US
Kind code	B2
Filing date	Dec 3, 2020
Priority date	Sep 9, 2020
Publication date	Dec 12, 2023
Grant date	Dec 12, 2023

Abstract

Proposed are a layered GaN compound, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by M 1-x Ga y N z (M is at least one of Group II elements, and 0<x≤1.0, 0.6≤y≤1.25, 0.75≤z≤1.5).

First claim

What is claimed is:

1. A layered compound having a two-dimensional layered structure represented by Formula 1 below:
M 1-x Ga y N z   [Formula 1]

(M is at least one of Group II elements, and 0.25≤x≤0.8, 0.6≤y≤1.25, and 0.75≤z≤1.5),
wherein the M is positioned between Ga y N z layers such that the Ga y N z layers are interlayer-bonded by the M.

2. The layered compound according to claim 1 ,
wherein the M is Ca.

3. The layered compound according to claim 1 ,
wherein the layered compound is represented by Formula 2 below:
M 1-x H a Ga y N z   [Formula 2]

(M is at least one of Group II elements, and 0.25≤x≤0.8, 0.6≤y≤1.25, 0<a≤x, and 0.75≤z≤1.5).

4. The layered compound according to claim 1 ,
wherein, in XRD measurement using CuKα rays, the layered compound has a group of peaks at the positions of 2θ=11.7°±0.50°, 34.5°±0.50°, 35.5°±0.50°, 43.9°±0.50°, and 51.1°±0.50°, the peaks having an intensity of 3% or greater with respect to a peak from the group of peaks having the greatest intensity.

5. The layered compound according to claim 1 ,
wherein, in XRD measurement using CuKα rays, the layered compound has a I (110) /I (001) value of 2.0 or less which is a peak intensity of a (110) plane to a peak intensity of a (001) plane.

6. The layered compound according to claim 3 ,
wherein the layered compound and a nanosheet comprising hydrogen ions exhibit peaks according to N—H bonding in a range of 1,400 cm −1 to 1,500 cm −1 through FT-IR analysis.

7. The layered compound according to claim 3 ,
wherein, in X-ray photoelectron spectroscopy (XPS) analysis, the layered compound has two binding peaks (XPS peak shoulder) in a range of 1,140 eV to 1,155 eV and 1,115 eV to 1,125 eV according to a binding energy of Ga (2P).

8. The layered compound according to claim 1 ,
wherein the layered compound exhibits resistance switching properties.

9. The layered compound according to claim 1 ,
wherein the layered compound exhibits luminescence properties in photoluminescence analysis.

10. The layered compound according to claim 1 ,
wherein the layered compound has an energy band gap of 0.1 eV to 2.5 eV.

11. A nanosheet comprising a compound having a two-dimensional layered structure represented by Formula 1 below, and prepared through a physical or chemical peeling method:
M 1-x Ga y N z   [Formula 1]

(M is at least one of Group II elements, and 0.25≤x≤0.8, 0.6≤y≤1.25, and 0.75≤z≤1.5),
wherein the M is positioned between Ga y N z layers such that the Ga y N z layers are interlayer-bonded by the M.

12. The nanosheet according to claim 11 ,
wherein the compound exhibits resistance switching properties.

13. The nanosheet according to claim 11 ,
wherein the compound exhibits luminescence properties in photoluminescence analysis.

14. The nanosheet according to claim 11 ,
wherein the compound has an energy band gap of 0.1 eV to 2.5 eV.

15. The nanosheet according to claim 11 ,
wherein the nanosheet has a thickness of 500 nm or less.

16. An electrical device comprising the layered compound according to claim 1 .

Assignees

• Univ Yonsei Iacf

Inventors

• Shim Woo-Young
• Won Jong-Bum

Classifications

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D62/118

  Nanostructure semiconductor bodies · CPC title

• C01G15/006 Primary

  Compounds containing gallium, indium or thallium, with or without oxygen or hydrogen, and containing two or more other elements · CPC title

• H01L29/0665

  Electricity · mapped topic

• H01L29/2003

  Electricity · mapped topic