Metal oxide film, method for manufacturing same, thin film transistor, display apparatus, image sensor, and x-ray sensor

Patent metadata

Field	Value
Publication number	US-2016005879-A1
Application number	US-201514856047-A
Country	US
Kind code	A1
Filing date	Sep 16, 2015
Priority date	Mar 19, 2013
Publication date	Jan 7, 2016
Grant date	—

Abstract

Provided is a metal oxide film, including a component having a peak position, in an XPS spectrum thereof, within a range corresponding to a binding energy of from 402 eV to 405 eV, the metal oxide film satisfying a relationship represented by Equation (1): A/(A+B)≧0.39, when an intensity of peak energy attributed to nitrogen 1s electron is obtained by peak separation, and a manufacturing method of the same, an oxide semiconductor film, a thin-film transistor, a display apparatus, an image sensor, and an X-ray sensor. In Equation (1), A represents a peak area of the component having a peak position within a range corresponding to a binding energy of from 402 eV to 405 eV, and B represents a peak area of a component having a peak position within a range corresponding to a binding energy of from 406 eV to 408 eV.

First claim

What is claimed is:

1 . A metal oxide film, comprising a component having a peak position, in an XPS spectrum of the metal oxide film, obtained by an X-ray photoelectron spectroscopy analysis, within a range corresponding to a binding energy of from 402 eV to 405 eV, the metal oxide film satisfying a relationship represented by the following Equation (1) when an intensity of a peak energy attributed to a nitrogen 1s electron is obtained by peak separation:
A/ ( A+B )≧0.39   Equation (1)
wherein, in Equation (1), A represents a peak area of the component having a peak position within a range corresponding to a binding energy of from 402 eV to 405 eV, and B represents a peak area of a component having a peak position within a range corresponding to a binding energy of from 406 eV to 408 eV.

2 . The metal oxide film according to claim 1 , which satisfies a relationship represented by the following Equation (2) when the intensity of the peak energy attributed to a nitrogen 1s electron is obtained by peak separation in the XPS spectrum of the metal oxide film, obtained by an X-ray photoelectron spectroscopy analysis:
A/ ( A+B )≧0.73   Equation (2)
wherein, in Equation (2), A represents the peak area of the component having a peak position within a range corresponding to a binding energy of from 402 eV to 405 eV, and B represents the peak area of the component having a peak position within a range corresponding to a binding energy of from 406 eV to 408 eV.

3 . The metal oxide film according to claim 1 , comprising indium.

4 . The metal oxide film according to claim 3 , comprising:
indium; and at least one selected from the group consisting of Zn, Sn, Ga and Al.

5 . The metal oxide film according to claim 3 , wherein a content of indium is 50 atom % or higher with respect to a total content of metal elements included in the metal oxide film.

6 . A conductive oxide film, comprising the metal oxide film according to claim 1 .

7 . An oxide semiconductor film, comprising the metal oxide film according to claim 1 .

8 . A method of manufacturing an oxide semiconductor film, comprising:
a precursor film forming process including applying a solution, that includes a nitrate, to a substrate to form a precursor film for an oxide semiconductor; a drying process of heating the substrate to a temperature of from 35° C. to 100° C. to dry the precursor film; and an oxide semiconductor film forming process of allowing the dried precursor film to absorb ultraviolet radiation so as to decompose the nitrate and form an oxide semiconductor film, wherein a maximum temperature reached by the substrate in the oxide semiconductor film forming process is 120° C. or higher.

9 . The method of manufacturing an oxide semiconductor film according to claim 8 , wherein the temperature of the substrate in the drying process is from 35° C. to 90° C.

10 . The method of manufacturing an oxide semiconductor film according to claim 8 , wherein the temperature of the substrate in the oxide semiconductor film forming process is 200° C. or lower.

11 . The method of manufacturing an oxide semiconductor film according to claim 8 , wherein the oxide semiconductor film comprises a component having a peak position, in an XPS spectrum of the metal oxide film, obtained by an X-ray photoelectron spectroscopy analysis, within a range corresponding to a binding energy of from 402 eV to 405 eV, and wherein a relationship represented by the following Equation (1) is satisfied when an intensity of a peak energy attributed to a nitrogen 1s electron is obtained by peak separation:
A/ ( A+B )≧0.39   Equation (1)
wherein, in Equation (1), A represents a peak area of the component having a peak position within a range corresponding to a binding energy of from 402 eV to 405 eV, and B represents a peak area of a component having a peak position within a range corresponding to a binding energy of from 406 eV to 408 eV.

12 . The method of manufacturing an oxide semiconductor film according to claim 8 , wherein, in the oxide semiconductor film forming process, the precursor film is irradiated with ultraviolet radiation having a wavelength of 254 nm or lower, at an intensity of 10 mW/cm 2 or higher.

13 . The method of manufacturing an oxide semiconductor film according to claim 8 , wherein the solution that includes a nitrate includes indium nitrate as the nitrate.

14 . The method of manufacturing an oxide semiconductor film according to claim 13 , wherein the solution that includes the indium nitrate further includes at least one metal component selected from the group consisting of Zn, Sn, Ga and Al.

15 . The method of manufacturing an oxide semiconductor film according to claim 8 , wherein the oxide semiconductor film forming process is performed in a nonoxidative atmosphere.

16 . The method of manufacturing an oxide semiconductor film according to claim 8 , wherein a light source for the ultraviolet radiation in the oxide semiconductor film forming process is a low pressure mercury lamp.

17 . The method of manufacturing an oxide semiconductor film according to claim 8 , wherein the solution that includes the nitrate includes methanol or methoxyethanol.

18 . The method of manufacturing an oxide semiconductor film according to claim 8 , wherein drying of the precursor film is started within 5 minutes after the precursor film forming process has been completed.

19 . The method of manufacturing an oxide semiconductor film according to claim 8 , wherein a concentration of the nitrate in the solution that includes the nitrate is from 0.01 mol/L to 0.5 mol/L.

20 . The method of manufacturing an oxide semiconductor film according to claim 8 , wherein, in the precursor film forming process, the solution that includes the nitrate is applied onto the substrate using at least one coating method selected from the group consisting of an inkjet method, a dispensing method, a relief printing method and an intaglio printing method, to form the precursor film.

21 . An oxide semiconductor film, which is manufactured by the method of manufacturing an oxide semiconductor film according to claim 8 .

22 . A thin-film transistor, comprising:
an active layer comprising the oxide semiconductor film according to claim 7 ; a source electrode; a drain electrode; a gate insulating film; and a gate electrode.

23 . A thin-film transistor, comprising:
an active layer comprising the oxide semiconductor film according to claim 21 ; a source electrode; a drain electrode; a gate insulating film; and a gate electrode.

24 . A display apparatus, comprising the thin-film transistor according to claim 22 .

25 . An image sensor, comprising the thin-film transistor according to claim 22 .

26 . An X-ray sensor, comprising the thin-film transistor according to claim 22 .

Assignees

• Fujifilm Corp

Inventors

• Takata Masahiro
• Tanaka Atsushi
• Suzuki Masayuki

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/2922

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/203

  using transformation of metal, e.g. oxidation or nitridation · CPC title