Showerhead faceplate having flow apertures configured for hollow cathode discharge suppression

US11837443B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11837443-B2
Application numberUS-202218071260-A
CountryUS
Kind codeB2
Filing dateNov 29, 2022
Priority dateOct 10, 2018
Publication dateDec 5, 2023
Grant dateDec 5, 2023

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A faceplate of a showerhead has a bottom side that faces a plasma generation region and a top side that faces a plenum into which a process gas is supplied during operation of a substrate processing system. The faceplate includes apertures formed through the bottom side and openings formed through the top side. Each of the apertures is formed to extend through a portion of an overall thickness of the faceplate to intersect with at least one of the openings to form a corresponding flow path for process gas through the faceplate. Each of the apertures has a cross-section that has a hollow cathode discharge suppression dimension in at least one direction. Each of the openings has a cross-section that has a smallest cross-sectional dimension that is greater than the hollow cathode discharge suppression dimension.

First claim

Opening claim text (preview).

What is claimed is: 1. A showerhead of a plasma processing chamber, comprising: a faceplate including a plurality of fluid passages, each of the fluid passages including an upper passage portion extending from a top surface of the faceplate to an interior depth within the faceplate, each of the fluid passages including a lower passage portion extending from a bottom surface of the faceplate to the interior depth within the faceplate such that the lower passage portion is fluidly connected to the upper passage portion, wherein a smallest dimension of a fluid flow cross-section of the lower passage portion is smaller than a hollow cathode discharge suppression size for a given plasma process, wherein a smallest dimension of a fluid flow cross-section of the upper passage portion is larger than the hollow cathode discharge suppression size for the given plasma process, wherein the hollow cathode discharge suppression size for the given plasma process is within a range extending from about 0.005 inch to about 0.04 inch. 2. The showerhead of the plasma processing chamber as recited in claim 1 , wherein the plurality of fluid passages are arranged across the faceplate in either a hexagonal-lattice array, a square-lattice array, a rectangular-lattice array, a rhombic-lattice array, a parallelogrammic-lattice array, or a Vogel pattern. 3. The showerhead of the plasma processing chamber as recited in claim 1 , wherein the upper passage portion is formed as a substantially cylindrical-shaped region, and the lower passage portion is formed as a substantially rectangular-shaped slot positioned to bisect the substantially cylindrically-shaped region. 4. The showerhead of the plasma processing chamber as recited in claim 1 , wherein the lower passage portion has an aspect ratio of less than or equal to about one. 5. The showerhead of the plasma processing chamber as recited in claim 1 , wherein the upper passage portion is formed as a substantially cylindrical-shaped region having a first diameter, and the lower passage portion is formed as a substantially cylindrical-shaped region having a second diameter that is smaller than the first diameter. 6. The showerhead of the plasma processing chamber as recited in claim 1 , wherein the faceplate is formed of metal or metal alloy material. 7. The showerhead of the plasma processing chamber as recited in claim 1 , wherein the faceplate is formed of a ceramic material. 8. The showerhead of the plasma processing chamber as recited in claim 1 , wherein a coating of plasma-resistant material is disposed on the bottom surface of the faceplate. 9. The showerhead of the plasma processing chamber as recited in claim 1 , wherein the interior depth within the faceplate as measured from the bottom surface of the faceplate is within a range extending from about 0.001 inch to about 0.03 inch. 10. The showerhead of the plasma processing chamber as recited in claim 1 , wherein the interior depth within the faceplate as measured from the bottom surface of the faceplate is less than or equal to about 50% of an overall thickness of the faceplate. 11. The showerhead of the plasma processing chamber as recited in claim 10 , wherein the overall thickness of the faceplate is within a range extending from about 0.25 inch to about 2 inches. 12. The showerhead of the plasma processing chamber as recited in claim 1 , wherein the interior depth within the faceplate as measured from the bottom surface of the faceplate is less than or equal to about 10% of an overall thickness of the faceplate. 13. The showerhead of the plasma processing chamber as recited in claim 12 , wherein the overall thickness of the faceplate is within a range extending from about 0.25 inch to about 2 inches. 14. The showerhead of the plasma processing chamber as recited in claim 1 , wherein the faceplate is a combination of an upper plate and a lower plate, the upper plate including the upper passage portions of the plurality of fluid passages, the lower plate including the lower passage portions of the plurality of fluid passages. 15. The showerhead of the plasma processing chamber as recited in claim 1 , wherein each of the lower passage portions is part of a corresponding linear-shaped channel formed to extend across the bottom surface of the faceplate, wherein the corresponding linear-shaped channel extends across multiple fluid passages of the plurality of fluid passages. 16. A method for operating a plasma processing chamber, comprising: disposing a showerhead for delivering process gas over a plasma generation region, the showerhead including a faceplate that separates a plenum from the plasma generation region, the faceplate including a plurality of fluid passages, each of the fluid passages including an upper passage portion extending from a top surface of the faceplate to an interior depth within the faceplate, each of the fluid passages including a lower passage portion extending from a bottom surface of the faceplate to the interior depth within the faceplate such that the lower passage portion is fluidly connected to the upper passage portion; flowing a process gas from the plenum through the plurality of fluid passages to the plasma generation region; and generating a plasma within the plasma generation region from the process gas, wherein a hollow cathode discharge suppression size is associated with the plasma, wherein a smallest dimension of a fluid flow cross-section of the lower passage portion is smaller than the hollow cathode discharge suppression size, and wherein a smallest dimension of a fluid flow cross-section of the upper passage portion is larger than the hollow cathode discharge suppression size, wherein the hollow cathode discharge suppression size is within a range extending from about 0.005 inch to about 0.04 inch. 17. The method as recited in claim 16 , wherein the lower passage portion has an aspect ratio of less than or equal to about one. 18. The method as recited in claim 16 , wherein the interior depth within the faceplate as measured from the bottom surface of the faceplate is within a range extending from about 0.001 inch to about 0.03 inch.

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What does patent US11837443B2 cover?
A faceplate of a showerhead has a bottom side that faces a plasma generation region and a top side that faces a plenum into which a process gas is supplied during operation of a substrate processing system. The faceplate includes apertures formed through the bottom side and openings formed through the top side. Each of the apertures is formed to extend through a portion of an overall thickness …
Who is the assignee on this patent?
Lam Res Corp
What technology area does this patent fall under?
Primary CPC classification H01J37/3244. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 05 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).