Semiconductor device and method for fabricating semiconductor device

Patent metadata

Field	Value
Publication number	US-11830871-B2
Application number	US-202017133692-A
Country	US
Kind code	B2
Filing date	Dec 24, 2020
Priority date	Feb 21, 2020
Publication date	Nov 28, 2023
Grant date	Nov 28, 2023

Abstract

Provided is a semiconductor device including a semiconductor substrate; a transistor portion provided in the semiconductor substrate; a current sensing portion for detecting current flowing through the transistor portion; an emitter electrode set to an emitter potential of the transistor portion; a sense electrode electrically connected to the current sensing portion; and a Zener diode electrically connected between the emitter electrode and the sense electrode. Provided is a semiconductor device fabricating method including providing a transistor portion in a semiconductor substrate; providing a current sensing portion for detecting current flowing through the transistor portion; providing an emitter electrode set to an emitter potential of the transistor portion; providing a sense electrode electrically connected to the current sensing portion; and providing a Zener diode electrically connected between the emitter electrode and the sense electrode.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor substrate;
a transistor portion provided in the semiconductor substrate;
a current sensing portion for detecting current flowing through the transistor portion;
an emitter electrode set to an emitter potential of the transistor portion;
a sense electrode electrically connected to the current sensing portion; and
a Zener diode electrically connected between the emitter electrode and the sense electrode,
wherein the transistor portion comprises a main insulated gate bipolar transistor (IGBT),
wherein the current sensing portion comprises a sense IGBT having an emitter,
wherein the sense electrode is electrically connected to the emitter of the sense IGBT,
wherein the sense electrode is formed with a rectangular shape in a top surface view, and
wherein the Zener diode is provided along at least two sides of the sense electrode.

2. The semiconductor device according to claim 1 , wherein
the Zener diode is provided on the semiconductor substrate.

3. The semiconductor device according to claim 1 , further comprising:
an emitter potential electrode that is set to the emitter potential and electrically connected to the Zener diode, such that the Zener diode is electrically connected between the emitter potential electrode and the sense electrode;
a well region of a second conductivity type that is provided in the semiconductor substrate and set to the emitter potential;
an interlayer dielectric film provided between the emitter potential electrode and the well region; and
a contact portion that is provided in a contact hole of the interlayer dielectric film and electrically connects the emitter potential electrode and the well region.

4. The semiconductor device according to claim 1 , wherein
the Zener diode is provided along at least three sides of the sense electrode.

5. The semiconductor device according to claim 1 , further comprising:
an emitter potential electrode that is set to the emitter potential and electrically connected to the Zener diode; and
an electrode connecting portion connecting the emitter potential electrode and the emitter electrode, above the semiconductor substrate.

6. The semiconductor device according to claim 1 , wherein
the Zener diode includes a first-conductivity-type region and a second-conductivity-type region, and
the first-conductivity-type region and the second-conductivity-type region are arranged side by side, in a top surface view.

7. The semiconductor device according to claim 6 , wherein
the first-conductivity-type region and the second-conductivity-type region each have a film thickness greater than or equal to 0.3 μm and less than or equal to 1 μm.

8. The semiconductor device according to claim 1 , comprising:
a temperature sensing portion that includes a diode provided in the semiconductor substrate, wherein
the diode of the temperature sensing portion and the Zener diode have substantially the same film thickness.

9. The semiconductor device according to claim 1 , wherein
a bonding length of the Zener diode is greater than or equal to 0.6 mm and less than or equal to 3.0 mm.

10. The semiconductor device according to claim 1 , wherein the Zener diode includes:
a well region of a second conductivity type;
a first-conductivity-type region provided above the well region in the semiconductor substrate; and
a second-conductivity-type region provided above the first-conductivity-type region in the semiconductor substrate.

11. The semiconductor device according to claim 10 , wherein
the transistor portion includes:
a drift region of a first conductivity type;
a base region of the second conductivity type provided on a front surface side of the drift region;
an emitter region of the first conductivity type that has a higher doping concentration than the drift region; and
a collector region of the second conductivity type that has a higher doping concentration than the base region, and

the first-conductivity-type region has the same film thickness and doping concentration as the emitter region.

12. The semiconductor device according to claim 1 , wherein the main IGBT has an active region having a surface area,
wherein the sense IGBT has an active region having a surface area, and
wherein the surface area of the active region of the sense IGBT is 1/1000 or less of the surface area of the active region of the main IGBT.

13. The semiconductor device according to claim 1 , further comprising an emitter potential electrode that is set to the emitter potential, wherein the Zener diode is electrically connected between the emitter potential electrode and the sense electrode, wherein the sense electrode has an outer periphery, and wherein the emitter potential electrode is provided along the outer periphery of the sense electrode in the top surface view.

14. The semiconductor device according to claim 13 , wherein the emitter potential electrode is provided such that the emitter potential electrode entirely surrounds the outer periphery of the sense electrode.

15. The semiconductor device according to claim 14 , wherein
the Zener diode is provided along at least three sides of the sense electrode.

16. The semiconductor device according to claim 15 , wherein the emitter potential electrode has an inner periphery, and wherein the Zener diode is provided along the outer periphery of the sense electrode at least along the three sides of the sense electrode and along a corresponding portion of the inner periphery of the emitter potential electrode.

17. The semiconductor device according to claim 16 , wherein the emitter potential electrode is in the form of an enclosed rectangular strip that completely surrounds the outer periphery of the sense electrode.

18. The semiconductor device according to claim 17 , comprising:
a well region of a second conductivity type that is provided in the semiconductor substrate and set to the emitter potential;
an interlayer dielectric film provided between the emitter potential electrode and the well region; and
a contact portion that is provided in a contact hole of the interlayer dielectric film and electrically connects the emitter potential electrode and the well region, wherein the contact portion is provided along at least a portion of one side of the rectangular strip forming the emitter potential electrode.

19. The semiconductor device according to claim 18 , wherein the side of the emitter potential electrode, along which the contact portion is provided, is the side of the emitter potential electrode that does not extend along the Zener diode.

20. The semiconductor device according to claim 13 , wherein the emitter potential electrode has an inner periphery, and wherein the Zener diode is provided along the outer periphery of the sense electrode at least along the two sides of the sense electrode and along a corresponding portion of the inner periphery of the emitter potential electrode.

Assignees

• Fuji Electric Co Ltd

Inventors

• Mitsuzuka Kaname
• Onozawa Yuichi

Classifications

• H10W40/00

  Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60) · CPC title

• H10P74/273 Primary

  Interconnections for measuring or testing, e.g. probe pads · CPC title

• H10D64/232

  Emitter electrodes for IGBTs · CPC title

• H10D12/481

  having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs · CPC title

• H10D62/393

  Body regions of DMOS transistors or IGBTs  (cell layout of DMOS H10D62/127) · CPC title