Display apparatus and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11824067-B2
Application number	US-202117352357-A
Country	US
Kind code	B2
Filing date	Jun 21, 2021
Priority date	Jan 25, 2018
Publication date	Nov 21, 2023
Grant date	Nov 21, 2023

Abstract

A display apparatus including a first thin film transistor including a first active layer, and a second thin film transistor disposed on the first thin film transistor and including a second active layer, in which a material of the first active layer is different from a material of the second active layer, and a channel area of the second active layer overlaps a channel area of the first active layer.

First claim

What is claimed is:

1. A display apparatus comprising:
a first thin film transistor comprising a first active layer and a first electrode;
a second thin film transistor disposed on the first thin film transistor and comprising a second active layer and a first electrode; and
a conductive layer disposed between the first thin film transistor and the second thin film transistor and overlapping the first electrode of the first thin film transistor,
wherein a material of the first active layer is different from a material of the second active layer,
wherein a channel area of the second active layer overlaps a channel area of the first active layer, and
wherein a voltage applied to the conductive layer is different from a voltage applied to the first electrode of the first thin film transistor.

2. The display apparatus of claim 1 , wherein one of the first active layer and the second active layer comprises an inorganic semiconductor material, and the other of the first active layer and the second active layer comprises an oxide semiconductor or an organic semiconductor material.

3. The display apparatus of claim 2 , wherein the inorganic semiconductor material comprises amorphous silicon or crystalline silicon.

4. The display apparatus of claim 1 , wherein each of the first thin film transistor and the second thin film transistor further comprises a second electrode and a third electrode,
wherein the first electrode of first thin film transistor is overlapped with the channel area of the first thin film transistor, and the first electrode of second thin film transistor is overlapped with the channel area of the second thin film transistor, and
wherein a layer comprising the second electrode and the third electrode is different from a layer comprising the first electrode.

5. The display apparatus of claim 4 , wherein the first electrode of the second thin film transistor overlaps the first electrode of the first thin film transistor.

6. The display apparatus of claim 4 , wherein a size of the first electrode of the first thin film transistor is larger than a size of the first electrode of the second thin film transistor.

7. The display apparatus of claim 1 , wherein a size of the conductive layer is greater than a size of the first electrode of the second thin film transistor.

8. The display apparatus of claim 1 , further comprising at least one inorganic insulating layer disposed between the first thin film transistor and the second thin film transistor.

9. The display apparatus of claim 1 , further comprising a display element disposed on the second thin film transistor, the display element electrically connected to the first thin film transistor and/or the second thin film transistor.

10. The display apparatus of claim 1 , wherein the first thin film transistor comprises the first electrode insulated from the first active layer, a second electrode, and a third electrode electrically connected to the first active layer, and
wherein the second thin film transistor comprises the first electrode insulated from the second active layer, a fifth electrode, and a sixth electrode electrically connected to the second active layer.

11. The display apparatus of claim 10 , wherein a layer comprising the second electrode and the third electrode is different from a layer comprising the fifth electrode and the sixth electrode.

12. A display apparatus comprising:
a first thin film transistor comprising a first active layer and a first electrode;
a second thin film transistor disposed on the first thin film transistor and comprising a second active layer and a first electrode; and
a conductive layer disposed between the first thin film transistor and the second thin film transistor and overlapping the first electrode of the first thin film transistor,
wherein a material of the first active layer is different from a material of the second active layer,
wherein a channel area of the second active layer overlaps a channel area of the first active layer,
wherein the conductive layer is insulated from the first electrode of the first thin film transistor, and
wherein a center of the first electrode of the second thin film transistor aligns with a center of the conductive layer.

Assignees

• Samsung Display Co Ltd

Inventors

• Chung Yunmo
• Lee Daewoo
• SEO ILhun
• YOON Hojin

Classifications

• H10D86/481

  integrated with passive devices, e.g. auxiliary capacitors · CPC title

• H10D86/451 Primary

  characterised by the compositions or shapes of the interlayer dielectrics · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/427

  having different thicknesses of the semiconductor bodies in different TFTs · CPC title

• H10D86/021

  of multiple TFTs · CPC title