Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Patent metadata

Field	Value
Publication number	US-11823946-B2
Application number	US-202016818510-A
Country	US
Kind code	B2
Filing date	Mar 13, 2020
Priority date	Sep 25, 2017
Publication date	Nov 21, 2023
Grant date	Nov 21, 2023

Abstract

Described herein is a technique capable of forming a film on a substrate with good uniformity. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: processing a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a source gas; (b) discharging at least the source gas; (c) supplying a reactive gas; and (d) discharging at least the reactive gas. The substrate is kept stationary while each cycle is performed, and a rotation angle of rotating the substrate is calculated based on the predetermined number of times after each cycle is completed.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a process chamber in which a substrate is processed;
a rotating mechanism configured to rotate the substrate;
a source gas supply system configured to supply a source gas;
a reactive gas supply system configured to supply a reactive gas;
an exhaust system configured to discharge the source gas and the reactive gas; and
a controller configured to control the rotating mechanism, the source gas supply system, the reactive gas supply system and the exhaust system to process the substrate by performing a cycle a predetermined number of times, the cycle comprising:
(a) supplying the source gas;
(b) discharging at least the source gas;
(c) supplying the reactive gas; and
(d) discharging at least the reactive gas,

wherein the controller is configured to control the rotating mechanism: to stop rotating the substrate while each cycle is performed; and to calculate a rotation angle of rotating the substrate based on an angle that is obtained by dividing a circumference of the substrate by the predetermined number of times into equal parts and to rotate the substrate by the rotation angle after each cycle is completed.

2. The substrate processing apparatus of claim 1 , wherein the controller is further configured to control the exhaust system to discharge at least the reactive gas in a manner same as in (d) while the substrate is rotated by the rotation angle.

3. The substrate processing apparatus of claim 1 , wherein the controller is further configured to control the rotating mechanism to rotate the substrate by the rotation angle after (d) of each cycle is completed and before (a) of a next cycle thereof is started.

4. The substrate processing apparatus of claim 1 , further comprises a substrate retainer in which the substrate is supported, and
the controller is further configured to control the rotating mechanism to rotate the substrate retainer and the substrate supported by the substrate retainer.

5. The substrate processing apparatus of claim 4 , wherein the controller is further configured to control the rotating mechanism, the source gas supply system, the reactive gas supply system and the exhaust system to perform:
(e) rotating the substrate by the rotation angle by operating the substrate retainer by the rotating mechanism after (d) of each cycle is completed and before (a) of a next cycle thereof is started.

6. The substrate processing apparatus of claim 5 , wherein (e) comprises:
(f) determining the rotation angle so as to prevent the source gas from interfering with a plurality of support columns of the substrate retainer.

7. The substrate processing apparatus of claim 6 , wherein the controller is further configured to confirm whether or not the substrate is rotated by the rotation angle in (f).

8. The substrate processing apparatus of claim 1 , wherein the controller is further configured to fine-tune the rotation angle after the substrate is rotated by the rotation angle.

9. The substrate processing apparatus of claim 1 , wherein the controller is further configured to complete a substrate processing without rotating the substrate after a last cycle is completed.

Assignees

• Kokusai Electric Corp

Inventors

• Kamimura Daigi

Classifications

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P72/7618 Primary

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P14/60

  of insulating materials · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title