Pattern forming process
US-2018239255-A1 · Aug 23, 2018 · US
Resist composition and method of forming resist pattern
US11822240B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11822240-B2 |
| Application number | US-202017121130-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 14, 2020 |
| Priority date | Dec 19, 2019 |
| Publication date | Nov 21, 2023 |
| Grant date | Nov 21, 2023 |
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- Title
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Abstract
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A resist composition that generates an acid upon exposure and whose solubility in a developing solution is changed by action of an acid, the resist composition containing a base material component whose solubility in a developing solution is changed by action of an acid, and a compound represented by General Formula (e1) in which Rd01 represents a monovalent organic group and Rd02 represents a single bond or a divalent linking group
First claim
Opening claim text (preview).
What is claimed is: 1. A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed by action of an acid, the resist composition comprising: a base material component (A) whose solubility in a developing solution is changed by action of an acid; and a compound (E1) represented by General Formula (e1), wherein Rd 01 represents a monovalent organic group having 2 to 15 carbon atoms; and Rd 02 represents a single bond or a divalent linking group. 2. The resist composition according to claim 1 , wherein Rd 01 in General Formula (e1) represents a cyclic hydrocarbon group which may have a substituent. 3. The resist composition according to claim 1 , wherein Rd 02 in General Formula (e1) represents a single bond. 4. A method of forming a resist pattern, comprising: forming a resist film on a support using the resist composition according to claim 1 ; exposing the resist film; and developing the exposed resist film to form a resist pattern. 5. The resist composition according to 1 , wherein the base material component (A) has a constitutional unit (a1) that includes an acid-decomposable group having a polarity which is increased by action of an acid. 6. A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed by action of an acid, the resist composition comprising: a base material component (A) whose solubility in a developing solution is changed by action of an acid; and a compound (E1) represented by General Formula (e1), wherein Rd 01 represents a cyclic hydrocarbon group which may have a substituent; and Rd 02 represents a single bond or a divalent linking group.
Assignees
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Classifications
- G03F7/0045Primary
with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title
the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title
the macromolecular compound having an alicyclic moiety in a side chain · CPC title
- G03F7/322Primary
Aqueous alkaline compositions · CPC title
- G03F7/004Primary
Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title
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- What does patent US11822240B2 cover?
- A resist composition that generates an acid upon exposure and whose solubility in a developing solution is changed by action of an acid, the resist composition containing a base material component whose solubility in a developing solution is changed by action of an acid, and a compound represented by General Formula (e1) in which Rd01 represents a monovalent organic group and Rd02 represents a …
- Who is the assignee on this patent?
- Tokyo Ohka Kogyo Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification G03F7/0045. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Nov 21 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).