Chemically amplified positive resist composition and resist pattern forming process
US-12164231-B2 · Dec 10, 2024 · US
Pattern forming process
US2018239255A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018239255-A1 |
| Application number | US-201815901029-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 21, 2018 |
| Priority date | Feb 22, 2017 |
| Publication date | Aug 23, 2018 |
| Grant date | — |
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- Title
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Abstract
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A pattern is formed by (i) applying a chemically amplified positive resist composition comprising (A) a base resin, (B) a photoacid generator, (C) an organic solvent, and (D) a polyvinyl alcohol or polyvinyl alkyl ether onto a substrate to form a resist film thereon, (ii) exposing the resist film to radiation, and (iii) dry etching the resist film with an oxygen-containing gas for development. Using the chemically amplified positive resist composition, a positive pattern is formed via dry development without a need for silylation.
First claim
Opening claim text (preview).
1 . A pattern forming process comprising the steps of: (i) applying a chemically amplified positive resist composition onto a substrate to form a resist film thereon, the resist composition comprising (A) a base resin containing a polymer having a phenolic hydroxyl group substituted with an acid labile group and adapted to turn alkali soluble as a result of the acid labile group being eliminated under the action of acid, (B) a photoacid generator, (C) an organic solvent, and (D) a polyvinyl alcohol or polyvinyl alkyl ether, (ii) exposing the resist film to radiation, and (iii) dry etching the exposed resist film with an oxygen-containing gas for development. 2 . The process of claim 1 , further comprising (i-2) heat treatment step between steps (i) and (ii). 3 . The process of claim 1 , further comprising (ii-2) heat treatment step between steps (ii) and (iii). 4 . The process of claim 1 wherein the chemically amplified positive resist composition is in film form. 5 . The process of claim 1 wherein the exposure step (ii) uses radiation of wavelength 300 to 500 nm.
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Classifications
the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title
- G03F7/039Primary
Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title
Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title
Coating on a rotating support, e.g. using a whirler or a spinner · CPC title
- G03F7/36Primary
Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma · CPC title
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- What does patent US2018239255A1 cover?
- A pattern is formed by (i) applying a chemically amplified positive resist composition comprising (A) a base resin, (B) a photoacid generator, (C) an organic solvent, and (D) a polyvinyl alcohol or polyvinyl alkyl ether onto a substrate to form a resist film thereon, (ii) exposing the resist film to radiation, and (iii) dry etching the resist film with an oxygen-containing gas for development. …
- Who is the assignee on this patent?
- Shinetsu Chemical Co
- What technology area does this patent fall under?
- Primary CPC classification G03F7/039. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Thu Aug 23 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).