Wire grid polarizer with multi-layer silane conformal coating

Patent metadata

Field	Value
Publication number	US-11822182-B2
Application number	US-202016933090-A
Country	US
Kind code	B2
Filing date	Jul 20, 2020
Priority date	Jul 26, 2017
Publication date	Nov 21, 2023
Grant date	Nov 21, 2023

Abstract

A method of vapor depositing a silane chemical onto a wire grid polarizer can include introducing a silane chemical and water into a chamber where the wire grid polarizer is located. The silane chemical and the water can be in a gaseous phase in the chamber. The silane chemical and the water can be maintained simultaneously in the gaseous phase in the chamber for period of time. The silane chemical and the water can react to form a (R1)2Si(OH)2 molecule, where each R1 is independently any chemical element or group. A silane coating can be formed on the wire grid polarizer from a chemical reaction of the (R1)2Si(OH)2 molecule with the wire grid polarizer and with other (R1)2Si(OH)2 molecules. The silane coating can be relatively thick and multi-layer. A thicker or multi-layer silane coating can have improved high temperature resistance relative to a thinner or mono-layer silane coating.

First claim

What is claimed is:

1. A wire grid polarizer comprising:
an array of wires, with nanometer-sized width, height, and pitch, on a substrate;
a silane coating on a surface of the wires and the substrate as a conformal coating, the silane coating comprising a silane coating having at least three layers, with silane in each layer chemically bonded to silane in an adjacent layer, the silane coating having at least three layers, having the structure:

where R 1 is any chemical element or group excluding a bond to the wires, R 4 comprises CF 3 (CF 2 ) n with n being an integer within the boundaries of 1≤n≤4, and X comprises a bond to the wires.

2. The wire grid polarizer of claim 1 , wherein R 4 is CF 3 (CF 2 ) n (CH 2 ) m with n and m being integers within the boundaries of 1≤n≤3 and 2≤m≤5.

3. The wire grid polarizer of claim 1 , wherein a water contact angle, of a water drop on a surface of the silane coating, is greater than 120° after heating the coated device at 350° C. for at least 80 hours.

4. The wire grid polarizer of claim 1 , further comprising a conformal coating of silicon dioxide, with a thickness of less than 30 nm, between the array of wires and the silane coating.

5. The wire grid polarizer of claim 1 , wherein a maximum thickness of the silane coating divided by a minimum thickness of the silane coating is less than 10.

6. The wire grid polarizer of claim 1 , wherein bonds between the silane coating and the wires, comprise covalent bonds.

7. The wire grid polarizer of claim 1 , wherein the silane coating further comprises:

where r>10.

8. A wire grid polarizer comprising:
an array of nanometer-sized wires on a substrate;
a silane coating on a surface of the wires and the substrate as a conformal coating, the silane coating comprising a silane coating having at least three layers, with silane in each layer chemically bonded to silane in an adjacent layer, the silane coating having at least three layers, having the structure:

and the silane coating further comprises:

where R 1 is any chemical element or group excluding a bond to the wires, R 4 comprises a hydrophobic group that is perfluorinated, X comprises a bond to the wires and r>10; and
a maximum thickness of the silane coating divided by a minimum thickness of the silane coating is less than 10.

9. The wire grid polarizer of claim 8 , wherein the perfluorinated hydrophobic group of R 4 comprises CF 3 (CF 2 ) n , with n being an integer within the boundaries of 1≤n≤4.

10. The wire grid polarizer of claim 8 , wherein R 4 comprises CF 3 (CF 2 ) n (CH 2 ) m with n and m being integers within the respective boundaries of 1≤n≤3 and 2≤m≤5.

11. The wire grid polarizer of claim 8 , wherein the maximum thickness of the silane coating divided by the minimum thickness of the silane coating is less than 5.

12. The wire grid polarizer of claim 8 , wherein the maximum thickness of the silane coating divided by the minimum thickness of the silane coating is less than 3.

13. The wire grid polarizer of claim 8 , wherein the minimum thickness of the silane coating is ≥0.7 nm and the maximum thickness of the silane coating is ≤20 nm.

14. A wire grid polarizer comprising:
an array of nanometer-sized wires on a substrate;
a silane coating on a surface of the wires and the substrate as a conformal coating, the silane coating comprising a silane coating having at least three layers, with silane in each layer chemically bonded to silane in an adjacent layer, the silane coating having at least three layers, having the structure:

where R 1 is any chemical element or group excluding a bond to the wires, X comprises a bond to the wires, and R 4 comprises a hydrophobic group that is perfluorinated;
a water contact angle, of a water drop on a surface of the silane coating, is greater than 120° after heating the coated device at 350° C. for at least 80 hours; and
a conformal coating of silicon dioxide, with a thickness of less than 30 nm, between the array of wires and the silane coating.

15. The wire grid polarizer of claim 14 , wherein R 4 is CF 3 (CF 2 ) n with n being an integer within the boundaries of 1≤n≤3.

16. The wire grid polarizer of claim 14 , wherein a maximum thickness of the silane coating divided by a minimum thickness of the silane coating is less than 5.

17. The wire grid polarizer of claim 14 , wherein a maximum thickness of the silane coating divided by a minimum thickness of the silane coating is less than 3.

18. The wire grid polarizer of claim 14 , wherein a minimum thickness of the silane coating is ≥0.7 nm and a maximum thickness of the silane coating is ≤20 nm.

19. The wire grid polarizer of claim 14 , wherein the silane coating further comprises:

where r>10.

20. The wire grid polarizer of claim 14 , wherein each R 1 is a carbon chain, —CH 3 , or —OSi(CH 3 ) 3 .

Assignees

• Moxtek Inc

Inventors

• Diwan Anubhav
• Linford Matt

Classifications

• G02F1/133548 Primary

  Wire-grid polarisers · CPC title

• C23C16/402 Primary

  Silicon dioxide · CPC title

• C23C16/455

  characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber · CPC title

• C23C16/45555

  applied in non-semiconductor technology · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title