Atomic layer deposition of rhenium containing thin films

Patent metadata

Field	Value
Publication number	US-11821084-B2
Application number	US-202117448586-A
Country	US
Kind code	B2
Filing date	Sep 23, 2021
Priority date	Dec 2, 2016
Publication date	Nov 21, 2023
Grant date	Nov 21, 2023

Abstract

Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

First claim

What is claimed is:

1. A method for depositing a thin film comprising rhenium sulfide on a substrate, the method comprising two or more sequential deposition cycles each comprising alternately and sequentially contacting the substrate with a vapor-phase rhenium precursor comprising a rhenium halide compound and a vapor-phase sulfur reactant, wherein the deposition cycles are carried out at a deposition temperature of 200 to 350° C.

2. The method of claim 1 , wherein the method is an atomic layer deposition (ALD) process.

3. The method of claim 1 , wherein the method is a sequential or pulsed chemical vapor deposition (CVD) process.

4. The method of claim 1 , wherein the vapor-phase rhenium precursor comprises ReCl 5 or ReF 6 .

5. The method of claim 1 , wherein the vapor-phase sulfur reactant comprises hydrogen and sulfur.

6. The method of claim 1 , wherein the vapor-phase sulfur reactant is an alkylsulfur compound.

7. The method of claim 1 , wherein the vapor-phase sulfur reactant comprises elemental sulfur.

8. The method of claim 1 , wherein the vapor-phase sulfur reactant has the formula R-S-H, wherein R is a substituted or unsubstituted hydrocarbon.

9. The method of claim 8 , wherein R is a C1-C8 alkyl or substituted alkyl.

10. The method of claim 1 , wherein the vapor-phase sulfur reactant comprises H 2 S n , wherein n is from 4 to 10.

11. The method of claim 1 , wherein the vapor-phase sulfur reactant comprises one or more of H 2 S, (CH 3 ) 2 S, (NH 4 ) 2 S, ((CH 3 ) 2 SO), and H 2 S 2 .

12. The method of claim 1 , wherein the vapor-phase sulfur reactant comprises (NH 4 ) 2 S.

13. The method of claim 1 , wherein the rhenium sulfide thin film comprises ReS 2 .

14. The method of claim 1 , wherein the rhenium sulfide thin film comprises ReS 2 , the vapor-phase rhenium precursor comprises ReCl 5 and the vapor-phase sulfur reactant comprises H 2 S.

15. The method of claim 1 , wherein the rhenium sulfide thin film comprises a two-dimensional material.

16. The method of claim 1 , wherein the rhenium sulfide thin film serves as a high mobility channel material in a logic device.

17. The method of claim 1 , wherein the deposition cycles are repeated sequentially to form 20 molecular layers of ReS 2 or less.

18. The method of claim 1 , wherein the rhenium sulfide thin film has an S:Re ratio from 0.5 to 3.

19. The method of claim 1 , wherein the rhenium sulfide thin film is deposited on a three-dimensional structure with step coverage of greater than 90%.

20. The method of claim 1 , wherein the rhenium sulfide thin film contains less than 20-at % hydrogen, less than 2 at-% carbon and less than 20 at-% oxygen.

21. The method of claim 1 , wherein the rhenium sulfide thin film contains less than 10 at-% Cl.

Assignees

• Asm Ip Holding Bv

Inventors

• Hamalainen Jani
• Ritala Mikko
• Leskela Markku

Classifications

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• C23C16/45534 Primary

  Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers · CPC title

• C23C16/06

  characterised by the deposition of metallic material · CPC title