Atomic layer deposition of rhenium containing thin films

Patent metadata

Field	Value
Publication number	US-10619242-B2
Application number	US-201715827988-A
Country	US
Kind code	B2
Filing date	Nov 30, 2017
Priority date	Dec 2, 2016
Publication date	Apr 14, 2020
Grant date	Apr 14, 2020

Abstract

Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

First claim

What is claimed is:

1. A method for depositing a thin film comprising rhenium on a substrate, the method comprising two or more sequential deposition cycles each comprising contacting the substrate with a vapor-phase rhenium precursor and a vapor-phase second reactant, wherein the deposition cycles are carried out at a deposition temperature of 300 to 500° C., wherein the second reactant does not comprise a chalcogen, wherein when contacting the substrate with the vapor-phase rhenium precursor the substrate is not contacted with another metal, semi-metal or metalloid precursor, and wherein the thin film is a metallic rhenium thin film comprising less than 20 at-% H and less than 5 at-% C as impurities and having a resistivity of about 10 to 500 microOhmcm.

2. The method of claim 1 , wherein the method is an atomic layer deposition (ALD) process.

3. The method of claim 1 , wherein the method is a cyclic chemical vapor deposition (CVD) method.

4. The method of claim 1 , wherein the rhenium precursor is a rhenium halide.

5. The method of claim 1 , wherein the second reactant comprises hydrogen.

6. The method of claim 1 , wherein the second reactant comprises nitrogen.

7. The method of claim 6 , wherein the second reactant comprises one or more of NH 3 , N 2 , NO 2 , and N 2 H 4 .

8. The method of claim 1 , wherein the second reactant is a plasma reactant.

9. The method of claim 1 , wherein the second reactant flows continuously during each deposition cycle.

10. The method of claim 1 , wherein the thin film comprises less than 5 at-% Cl as impurities.

11. The method of claim 1 , wherein the thin film is deposited on a three-dimensional structure with step coverage of greater than 90%.

12. The method of claim 1 , wherein the thin film serves as a work function metal in a gate stack.

13. The method of claim 1 , wherein the thin film serves as a metal capping layer.

14. The method of claim 1 , wherein the thin film serves as a fill layer for a 3-dimensional structure.

15. The method of claim 1 , wherein the thin film does not comprise rhenium nitride.

16. A cyclic vapor deposition method for depositing a rhenium-containing thin film on a substrate in a reaction chamber comprising one or more deposition cycles comprising:
contacting the substrate with a first vapor-phase rhenium precursor; and
contacting the substrate with a second vapor phase reactant, wherein the second vapor-phase reactant does not comprise a chalcogen,
wherein the one or more deposition cycles are carried out at a temperature of 300 to 500° C., and wherein the thin film is a metallic rhenium thin film comprising less than 20 at-% H and less than 5 at-% C as impurities and having a resistivity of about 10 to 500 microOhmcm.

17. The method of claim 16 , wherein the method is an atomic layer deposition (ALD) process in which the substrate is alternately and sequentially contacted with the first vapor-phase rhenium precursor and the second vapor-phase reactant.

18. The method of claim 16 , wherein the method is a sequential or pulsed chemical vapor deposition (CVD) process.

19. The method of claim 16 , wherein the one or more deposition cycles are carried out at a deposition temperature below 450° C.

20. The method of claim 16 , wherein the vapor-phase rhenium precursor comprises a rhenium halide.

21. The method of claim 16 , wherein the second reactant comprises one or more reactive species formed by generating a plasma in a reactant gas.

Assignees

• Asm Ip Holding Bv

Inventors

• Hamalainen Jani
• Ritala Mikko
• Leskela Markku

Classifications

• C23C16/305

  Sulfides, selenides, or tellurides · CPC title

• C23C16/45534 Primary

  Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers · CPC title

• C23C16/34

  Nitrides {(C23C16/303 takes precedence)} · CPC title

• C23C16/06

  characterised by the deposition of metallic material · CPC title

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title