Hard abrasive particle-free polishing of hard materials

Patent metadata

Field	Value
Publication number	US-11820918-B2
Application number	US-202117365916-A
Country	US
Kind code	B2
Filing date	Jul 1, 2021
Priority date	Jul 10, 2017
Publication date	Nov 21, 2023
Grant date	Nov 21, 2023

Abstract

A method of CMP includes providing a slurry solution including ≥1 per-compound oxidizer in a concentration between 0.01 M and 2 M with a pH from 2 to 5 or 8 to 11, and ≥1 buffering agent which provides a buffering ratio ≥1.5 that compares an amount of a strong acid needed to reduce the pH from 9.0 to 3.0 as compared to an amount of strong acid to change the pH from 9.0 to 3.0 without the buffering agent. The slurry solution is exclusive any hard slurry particles or has only soft slurry particles that have throughout a Vickers hardness <300 Kg/mm 2 or Mohs Hardness <4. The slurry solution is dispensed on a hard surface having a Vickers hardness >1,000 kg/mm 2 is pressed by a polishing pad with the slurry solution in between while rotating the polishing pad relative to the hard surface.

First claim

The invention claimed is:

1. A method of chemical mechanical polishing (CMP) hard surfaces, comprising:
providing a slurry comprising:
an aqueous medium;
at least one permanganate oxidizer that includes an element in its highest oxidation state with a concentration between 0.01 M and 2.0 M;
a pH level from 8 to 11;
at least one buffering agent different from said at least one permanganate oxidizer, the at least one buffering agent comprising at least one of a surfactant and an alkali metal ion and wherein the at least one buffering agent comprises a species having the formula RCHO, wherein R is a carbon containing group; and
particles of MnO 2 having a Mohs hardness of ≤3,
said slurry being exclusive of any particles that have a Mohs hardness >3,

dispensing said slurry on a hard surface having a Vickers hardness >1,000 kg/mm 2 , and
pressing with a polishing pad with said slurry on said hard surface in between while rotating said polishing pad relative to said hard surface.

2. The method of claim 1 , wherein said hard surface comprises a carbide, a nitride, or a mixture thereof.

3. The method of claim 1 , wherein said slurry further comprises transition metal ions in a concentration from 0.03 M to 1 M in addition to any transition metal ions that may be in said permanganate oxidizer.

4. The method of claim 1 , wherein said polishing pad comprises a polymeric pad having a Shore D hardness less than 100, wherein a polishing pressure used for said pressing is less than 15 psi.

5. The method of claim 1 , wherein said particles of MnO 2 having a Mohs hardness ≤3 are particles formed in-situ by autocatalysis.

6. The method of claim 1 , wherein said at least one buffering comprises at least one of a surfactant and at least 2 different valences states of Mn ions including said at least one permanganate oxidizer chosen from +7, +4, +2, and +3.

7. The method of claim 6 , wherein said at least one buffering agent comprises said surfactant.

8. The method of claim 1 , wherein said at least one permanganate oxidizer comprises potassium permanganate or sodium permanganate.

9. The method of claim 1 , wherein said slurry further comprises at least one alkali metal ion besides an alkali metal ion in said at least one permanganate oxidizer if said at least one permanganate oxidizer includes an alkali metal ion.

Assignees

• Entegris Inc
• Univ Florida

Inventors

• Singh Rajiv K
• Arjunan Arul
• Singh Deepika
• Ginde Chaitanya
• Jawali Puneet

Classifications

• H10P90/129

  by polishing · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title

• B24B37/00

  Lapping machines or devices; Accessories (B24B3/00 takes precedence) · CPC title