Pattern forming material, composition for pattern formation, pattern forming method and method of manufacturing semiconductor device
US-2020291155-A1 · Sep 17, 2020 · US
Compound, polymer, pattern forming material, and manufacturing method of semiconductor device
US11820840B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11820840-B2 |
| Application number | US-202318187584-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 21, 2023 |
| Priority date | Sep 11, 2019 |
| Publication date | Nov 21, 2023 |
| Grant date | Nov 21, 2023 |
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- Title
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- Abstract
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- CPC / IPC classifications
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Abstract
Official abstract text for this publication.
A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (3) described below, where R 21 is H or CH 3 , each R 22 is a hydrocarbon group of C 2-14 where a carbon is primary carbon, secondary carbon or tertiary carbon, Q is a single bond or a hydrocarbon group of C 1-20 carbon atoms which may include an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms of or at a bond terminal, and a halogen atom may be substituted for the hydrogen atom.
First claim
Opening claim text (preview).
What is claimed is: 1. A pattern forming material containing a polymer including a monomer unit represented by a general formula (3) described below, wherein, R 21 is one of a hydrogen atom, a halogen atom, or a methyl group, and each R 22 independently comprises one of: a hydrocarbon group having 2 to 14 carbon atoms where a carbon is primary carbon, secondary carbon or tertiary carbon, and Q comprises one of: a single bond or a hydrocarbon group having 1 to 20 carbon atoms. 2. The material according to claim 1 , wherein each R 22 independently comprises one of is an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, an s-butyl group, or a t-butyl group. 3. The pattern forming material of claim 1 , wherein Q comprises one of: an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal.
Assignees
Inventors
Classifications
of masks comprising organic materials · CPC title
carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title
of organic photoresist masks · CPC title
- C08F20/30Primary
containing aromatic rings in the alcohol moiety · CPC title
- C07C69/76Primary
Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring · CPC title
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Frequently asked questions
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- What does patent US11820840B2 cover?
- A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (3) described below, where R …
- Who is the assignee on this patent?
- Kioxia Corp
- What technology area does this patent fall under?
- Primary CPC classification C08F20/30. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Nov 21 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).