Post-fabrication trimming of silicon ring resonators via integrated annealing

Patent metadata

Field	Value
Publication number	US-11808978-B2
Application number	US-202016991495-A
Country	US
Kind code	B2
Filing date	Aug 12, 2020
Priority date	Aug 12, 2019
Publication date	Nov 7, 2023
Grant date	Nov 7, 2023

Abstract

Methods for post-fabrication trimming of a silicon ring resonator are disclosed. Methods include fabricating a heating element, positioned within 2 microns of the silicon ring resonator, subjecting the silicon ring resonator to energetic ion implantation, and annealing the silicon ring resonator, using the heating element. The energetic ion implantation shifts a resonance of the silicon ring resonator towards the red side of the electro-magnetic spectrum. The annealing shifts the resonance of the silicon ring resonator towards the blue side of the electro-magnetic spectrum.

First claim

The invention claimed is:

1. A method for post-fabrication trimming of a silicon ring resonator, the method comprising:
fabricating a heating element, wherein the heating element is separated from the silicon ring resonator;
subjecting the silicon ring resonator to energetic ion implantation, wherein the energetic ion implantation shifts a resonance of the silicon ring resonator towards the red side of the electro-magnetic spectrum; and
following the energetic ion implantation, annealing the silicon ring resonator, using the heating element, wherein the annealing shifts the resonance of the silicon ring resonator towards the blue side of the electro-magnetic spectrum.

2. The method of claim 1 , wherein the silicon ring resonator is one of a plurality of silicon ring resonators forming an optical circuit, and wherein the annealing shifts the resonance of the silicon ring resonator without shifting a resonance in other silicon ring resonators in the plurality of silicon ring resonators.

3. The method of claim 1 , wherein the heating element substantially overlies the silicon ring resonator.

4. The method of claim 1 , wherein the heating element comprises a titanium-nitride (TiN) micro-heater.

5. The method of claim 1 , wherein the heating element is controlled by an electrical signal.

6. The method of claim 1 , wherein the energetic ion implantation comprises boron ion implantation at energies sufficient to create silicon lattice defects in the silicon ring resonator.

7. A silicon ring resonator that has been trimmed, post fabrication, according to the method of claim 1 .

8. The silicon ring resonator of claim 7 , wherein the silicon ring resonator is a passive resonator.

9. The silicon ring resonator of claim 1 , wherein the silicon ring resonator is configured to be used as at least one of an optical filter and an optical switch.

10. The silicon ring resonator of claim 7 or claim 8 , wherein the silicon ring resonator contains electrical doping, and is configured to be used as at least one of an optical modulator and an optical detector.

Assignees

• Univ Mcmaster

Inventors

• Knights Andrew
• Hagan David
• Torres-Kulik Benjamin

Classifications

• G02B6/1347 Primary

  using ion implantation (ion implantation in glass C03C23/0055; ion implantation in general C23C) · CPC title

• G02B6/12007

  forming wavelength selective elements, e.g. multiplexer, demultiplexer · CPC title

• H05B1/0233 Primary

  for semiconductors manufacturing · CPC title

• H05B3/12

  characterised by the composition or nature of the conductive material · CPC title

• G02B2006/12138

  Sensor · CPC title