Apparatus for manufacturing display device, method of manufacturing mask assembly, and method of manufacturing display device

Patent metadata

Field	Value
Publication number	US-11807933-B2
Application number	US-202117230867-A
Country	US
Kind code	B2
Filing date	Apr 14, 2021
Priority date	Aug 10, 2020
Publication date	Nov 7, 2023
Grant date	Nov 7, 2023

Abstract

An apparatus for manufacturing a display device includes a mask assembly, the mask assembly including a silicon substrate having a first surface, a second surface opposite the first surface, and a first opening portion penetrating the first surface and the second surface, and a support substrate on the second surface, the support substrate having a second opening portion connected to the first opening portion. The first opening portion at the first surface is less in width than the first opening portion at the second surface.

First claim

What is claimed is:

1. A method of manufacturing a mask assembly, the method comprising:
preparing a mask substrate comprising a first layer, a second layer, and a third layer;
forming a first opening portion in the first layer;
arranging, on the first layer, a support substrate having a second opening portion connected to the first opening portion;
removing the third layer; and
removing the second layer.

2. The method of claim 1 , wherein each of the first layer and the third layer comprises silicon, and
wherein the second layer comprises silicon oxide.

3. The method of claim 1 , wherein the forming of the first opening portion comprises:
dry etching the first layer; and
forming the first opening portion at a first surface of the first layer and a second surface opposite to the first surface, the first opening portion at the first surface being less in width than the first opening portion at the second surface, and
wherein the first surface is a surface facing the second layer.

4. The method of claim 1 , wherein the arranging of the support substrate comprises directly connecting the first layer to the support substrate.

5. The method of claim 1 , wherein a plurality of first opening portions are formed in the first layer, the plurality of first opening portions comprising the first opening portion, and
wherein the arranging of the support substrate comprises connecting the second opening portion to the plurality of first opening portions.

6. The method of claim 1 , further comprising forming a silicon oxide film on surfaces of the mask substrate and the support substrate.

7. The method of claim 6 , further comprising removing the silicon oxide film,
wherein the removing of the second layer is concurrently performed with the removing of the silicon oxide film.

8. The method of claim 1 , wherein the removing of the third layer comprises:
polishing the third layer; and
wet etching or dry etching the third layer.

9. The method of claim 1 , wherein the arranging of the support substrate comprises adhering the support substrate to the first layer utilizing an intermediate adhesive member.

10. The method of claim 1 , further comprising arranging, on the support substrate, a mask sheet having a mask opening portion and a mask frame having an opening area,
wherein the first layer comprises a first surface facing the second layer and a second surface opposite to the first surface, and
wherein the second surface of the first layer faces the mask sheet.

Assignees

• Samsung Display Co Ltd

Inventors

• Cho Wonje

Classifications

• C23C14/042 Primary

  using masks · CPC title

• C23C14/0682

  Silicides · CPC title

• C23C14/08

  Oxides (C23C14/10 takes precedence) · CPC title

• H10K71/166

  using selective deposition, e.g. using a mask · CPC title

• H10K71/231

  by etching of existing layers · CPC title