Vapor deposition mask, vapor deposition mask preparation body, method for producing vapor deposition mask, and method for producing organic semiconductor element
US-2016168691-A1 · Jun 16, 2016 · US
US10580985B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10580985-B2 |
| Application number | US-201616068430-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 22, 2016 |
| Priority date | Jan 6, 2016 |
| Publication date | Mar 3, 2020 |
| Grant date | Mar 3, 2020 |
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A deposition mask and a manufacturing method thereof capable of performing vapor deposition at a desired place, without causing any gap between the deposition mask and a substrate for vapor deposition having a surface of irregularity, even when depositing a vapor deposition material only at a predetermined place on a bottom part of the substrate for vapor deposition, are provided. The manufacturing method includes preparing a dummy substrate having irregularity corresponding to a surface shape of the substrate for vapor deposition (step S1), coating a liquid resin material on an uneven surface of the dummy substrate to form a resin coating layer (step S2), and raising the temperature of the resin coating layer and baking the resin coating layer to obtain a baked resin film (step S3). The manufacturing method further includes forming a desired opening pattern on the baked resin film attached to the dummy substrate to obtain a resin film having the desired opening pattern (step S4), and subsequently peeling off the resin film from the dummy substrate to obtain a deposition mask (step S6).
Opening claim text (preview).
The invention claimed is: 1. A deposition mask for forming a deposition layer by vapor deposition at a predetermined place on a surface of a substrate for vapor deposition having a surface of irregularity, wherein the deposition mask is formed of a resin film so as to have one surface having a flat surface and the other surface having an uneven surface corresponding to an inversed shape of the surface of irregularity of the substrate for vapor deposition, and wherein the deposition mask has an opening formed at a portion corresponding to the predetermined place; wherein the opening is formed in a taper shape in such a manner that an open area decreases in a direction from the one surface to the other surface, and a taper angle of the taper shape is equal to or less than a vapor deposition angle of a deposition material evaporating from a deposition material source. 2. The deposition mask according to claim 1 , wherein the resin film is made of a polyimide so that a difference between a linear expansion coefficient of the resin film and a linear expansion coefficient of the substrate for vapor deposition becomes equal to or less than 3 ppm/° C. 3. A method for manufacturing a deposition mask for forming a deposition layer at a predetermined place on a surface of a substrate for vapor deposition having an irregularity on the surface, by depositing a deposition material at the predetermined place, the manufacturing method comprising: preparing a dummy substrate having an irregularity on a surface thereof corresponding to the irregularity of the surface of the substrate for vapor deposition; forming a resin coating layer by coating the irregularity of the surface of the dummy substrate with a liquid resin material, the liquid resin material being applied until a surface thereof becoming substantially flat; forming a baked resin film by raising the temperature of the resin coating layer up to a hardening temperature of the resin material to bake the resin coating layer; forming a resin film having a desired opening pattern by irradiating the baked resin film attached to the dummy substrate with a laser beam to form the desired opening pattern on the baked resin film; and peeling off the resin film from the dummy substrate to obtain a deposition mask. 4. The method for manufacturing the deposition mask according to claim 3 , wherein when forming the opening pattern with irradiation of the laser beam, the laser beam is irradiated such that a periphery of each opening of the opening pattern is formed into a taper shape in the thickness direction on the resin film, by forming a laser mask such that the transmittance of the laser beam deteriorates toward a peripheral edge of an opening at the periphery of the opening of the laser mask. 5. The method for manufacturing the deposition mask according to claim 3 , wherein the baking of the resin coating layer is performed while adjusting at least one of coating thickness of the resin material, baking temperature at the time of baking, baking time, and a profile of the baking temperature and the baking time, so that a difference between a linear expansion coefficient of the baked resin film formed by baking and a linear expansion coefficient of the substrate for vapor deposition becomes equal to or less than 3 ppm/° C. 6. The method for manufacturing the deposition mask according to claim 3 , further comprising selecting a material of the dummy substrate so that a difference between a linear expansion coefficient of the baked resin film formed by baking and a linear expansion coefficient of the dummy substrate becomes equal to or less than 3 ppm/° C. by performing the baking of the resin coating layer while adjusting at least one of coating thickness of the resin material, baking temperature at the time of baking, baking time, and a profile of the baking temperature and the baking time. 7. The method for manufacturing the deposition mask according to claim 3 , wherein the baking of the resin material is performed by raising the temperature stepwise at an interval not less than 10° C. and not greater than 200° C. every five to 120 minutes until the temperature reaches the baking temperature. 8. The method for manufacturing the deposition mask according to claim 3 , wherein a work by the laser beam irradiation is for forming a deposition mask to be used for vapor depositing an organic material for each pixel on the substrate for vapor deposition. 9. The method for manufacturing the deposition mask according to claim 3 , wherein the laser beam is formed in a form of a pulsed laser. 10. The method for manufacturing the deposition mask according to claim 3 , further comprising forming a frame body along the periphery of the resin film before peeling off the resin film from the dummy substrate. 11. The method for manufacturing the deposition mask according to claim 3 , further comprising irradiating to an interface between the resin film and the dummy substrate with short-wavelength light focused on the interface, when peeling off the resin film from the dummy substrate, thereby reducing an adhesion force acting between the resin film and the dummy substrate. 12. A method for manufacturing an organic EL display device including a deposition of an organic material on a substrate for vapor deposition, the method comprising: preparing a dummy substrate having an irregularity corresponding to a surface of the substrate for vapor deposition, the substrate for vapor deposition being to be deposited with the organic material; coating a liquid resin on a surface having the irregularity of the dummy substrate until a surface thereof becoming substantially flat and baking the liquid resin to obtain a baked resin film, and irradiating the baked resin film with a laser beam to obtain a resin film having an opening pattern formed thereon; forming a deposition mask by peeling off the resin film from the dummy substrate; positioning and overlapping the deposition mask with the substrate for vapor deposition, the substrate for vapor deposition being formed with a TFT, a first electrode, and a bank for partitioning each pixel on a device substrate, and vapor depositing an organic material to form an organic layer on the substrate for vapor deposition; and removing the deposition mask, and forming a second electrode. 13. The method for manufacturing the organic EL display device according to claim 12 , further comprising forming the bank so as to have a taper shape in cross section so that a taper angle of the bank becomes equal to or less than a vapor deposition angle of a deposition material evaporating from a vapor deposition source of the organic material.
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