Group VI precursor compounds

US11807653B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11807653-B2
Application numberUS-202217736855-A
CountryUS
Kind codeB2
Filing dateMay 4, 2022
Priority dateFeb 27, 2019
Publication dateNov 7, 2023
Grant dateNov 7, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.

First claim

Opening claim text (preview).

What is claimed is: 1. A process for preparing compounds of the Formula (I) wherein M is chosen from tungsten and chromium, X is chosen from fluoro, chloro, bromo, and iodo, and each L 1 and L 2 are the same or different and constitute: (i) a monodentate hydrocarbyl ligand coordinated with M, or (ii) are taken together to form a bidentate hydrocarbyl ligand coordinated with M; which comprises: (A) contacting a compound of the formula with (a) water containing about 0.1% (w/w) to about 48% (w/w) of a compound of the formula HX, and (b) a compound of the formula L 1 and/or L 2 ; followed by (B) extraction of the compound of Formula(I) with a non-coordinating, water immiscible solvent, and isolation of the compound of Formula (I) as a solid or liquid. 2. The process of claim 1 , wherein X is fluoro. 3. The process of claim 1 , wherein X is chloro. 4. The process of claim 1 , wherein X is bromo. 5. The process of claim 1 , wherein X is iodo. 6. The process of claim 1 , wherein L 1 and L 2 are dimethoxyethane. 7. The process of claim 1 , wherein the non-coordinating, water-immiscible solvent is dichloromethane, ethyl acetate, diethyl ether, toluene, benzene, or pentane. 8. The process of claim 6 , wherein the non-coordinating, water-immiscible solvent is dichloromethane. 9. The process of claim 1 , wherein M is tungsten. 10. The process of claim 1 , wherein M is chromium.

Assignees

Inventors

Classifications

  • the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium · CPC title

  • Deposition of metallic or metal-silicide materials · CPC title

  • deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

  • the materials being characterised by the deposition precursor materials · CPC title

  • characterised by the metal · CPC title

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What does patent US11807653B2 cover?
The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be dep…
Who is the assignee on this patent?
Entegris Inc
What technology area does this patent fall under?
Primary CPC classification C23C16/18. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Nov 07 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).