Integrated assemblies having rugged material fill, and methods of forming integrated assemblies

Patent metadata

Field	Value
Publication number	US-11805645-B2
Application number	US-201916542645-A
Country	US
Kind code	B2
Filing date	Aug 16, 2019
Priority date	Aug 16, 2019
Publication date	Oct 31, 2023
Grant date	Oct 31, 2023

Abstract

Some embodiments include a structure having an opening extending into an integrated configuration. A first material is within the opening, and is configured to create an undulating topography relative to a sidewall of the opening. The undulating topography has a surface roughness characterized by a mean roughness parameter R mean which is the mean peak-to-valley distance along the undulating topography. The R mean is at least about 4 nm. A second material is within the opening and along at least a portion of the undulating topography. The first and second materials are compositionally different from one another. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.

First claim

We claim:

1. A structure, comprising:
an opening extending into an integrated configuration, the opening having a sidewall;
a material within the opening; the material comprising differing dimensioned structures being configured to create an undulating topography relative to the sidewall; the undulating topography having a surface roughness characterized by a mean roughness parameter R mean which is the mean peak-to-valley distance along the undulating topography; the R mean being at least about 4 nm, the differing dimensioned structures comprising a first dimension along the sidewall and a second dimension perpendicular to the first dimension, the first dimension being the greater dimension of the differing dimensioned structures, the differing dimensioned structures comprise amorphous structures;
a liner in the opening between the sidewall and the material;
wherein the material is a first material, and further comprising a second material within the opening and along at least a portion of the undulating topography; the second material being compositionally different than the first material; and
wherein the first material includes one or more metals in combination with one or more of boron, carbon, silicon, germanium, nitrogen and oxygen.

2. The structure of claim 1 wherein the first material includes at least one discrete grain which is only partially surrounded by the second material.

3. The structure of claim 1 wherein the first material is an insulative material.

4. The structure of claim 1 wherein the first material is a conductive material.

5. The structure of claim 1 wherein the first material is a semiconductive material.

6. The structure of claim 1 wherein the first material includes one or more metals.

7. The structure of claim 1 wherein the first material includes one or more of Cu, Al, Ag, Au, W and Fe.

8. The structure of claim 7 wherein the second material includes one or more of silicon nitride, aluminum oxide, tungsten, silicon dioxide and semiconductor material.

9. The structure of claim 1 wherein the second material includes one or more of Ti, Wand Si.

10. The structure of claim 9 wherein the second material further includes one or both of O and N.

11. The structure of claim 1 wherein the first material comprises one or both of Si and Ge.

12. The structure of claim 11 wherein the first material further includes one or more additional constituents selected from the group consisting of B, P and As; with a total concentration of said additional constituents within the first material being within a range of from about 0.5 at % to about 5 at %.

13. The structure of claim 1 wherein the surface roughness is also characterized by a maximum roughness parameter R max which is the maximum peak-to-valley distance along the undulating topography; and wherein the R max is at least about 10 nm.

14. The structure of claim 1 wherein the R mean is at least about 10 nm.

15. The structure of claim 1 wherein the R mean is at least about 20 nm.

16. The structure of claim 1 wherein the R mean is at least about 50 nm.

17. The structure of claim 1 wherein the integrated configuration comprises a vertical stack of alternating insulative levels and conductive levels, and wherein the opening extends through the stack.

18. The structure of claim 17 wherein the liner is insulative, and wherein the first and second materials are within the lined opening.

19. The structure of claim 1 wherein the second material fills only a bottom portion of the opening.

20. The structure of claim 1 wherein the second material covers only some of the differing dimensioned structures.

21. The structure of claim 1 wherein at least one of the differing dimensioned structures overlaps and rests upon a portion of a structure of one adjacent differing dimensioned structure.

22. The structure of claim 1 wherein at least one of the differing dimensioned structures contacts another one of the differing dimensioned structures.

23. The structure of claim 1 wherein the second material and the first material that comprises differing dimensioned structures are the only two materials completely filling the opening.

24. The structure of claim 1 wherein each differing dimensioned structure is spaced from other differing dimensioned structures and not one differing dimensioned structure contacts another differing dimensioned structure.

25. The structure of claim 1 wherein each differing dimensioned structure is configured as a spherical cap.

26. A memory device, comprising:
a vertical stack of alternating insulative levels and conductive levels;
a slit extending through the stack;
a granular first material within the slit and having a mean granule maximum dimension (Dmax mean ) along a cross-section of at least about 4 nm; the granular first material partially filling the opening to leave unfilled regions between grains of the granular first material; each grain of the granular first material comprising a peripheral surface in the slit, the peripheral surface is not curved and has corners, each grain is spaced from other grains and not one grain is contacting another one grain;
a second material within at least some of the unfilled regions; the second material being compositionally different than the first material;
channel material pillars extending through the stack; and
memory cells along the channel material pillars.

27. The memory device of claim 26 wherein the slit separates a first block region from a second block region.

28. The memory device of claim 26 wherein the granular first material is directly against one or more of the conductive levels.

29. The memory device of claim 26 comprising one or more voids at least partially surrounded by the first material.

30. The memory device of claim 26 wherein the slit is lined with an insulative liner, and wherein the first and second materials are within the lined slit.

31. The memory device of claim 26 wherein the Dmax mean is at least about 10 nm.

32. The memory device of claim 26 wherein the slit has a width along the cross-section, and wherein the Dmax mean is at least about 2% of said width.

33. The memory device of claim 26 wherein the slit has a width along the cross-section, and wherein the Dmax mean is at least about 5% of said width.

34. The memory device of claim 21 wherein the slit has a width along the cross-section, and wherein the Dmax mean is at least about 10% of said width.

35. The memory device of claim 26 wherein the first material includes one or more of Cu, Al, Ag, Au, W, Ti and Fe.

36. The memory device of claim 26 wherein the first material comprises one or both of Si and Ge, and further includes one or more additional constituents selected from the group consisting of B, P and As; with a total concentration of said additional constituents within the first material being within a range of from about 0.5 at % to about 5 at %.

37. The structure of claim 26 wherein at least one structure of the granular first material overlaps and rests upon a portion of a second structure of an another one of the granular first material.

38. The structure of claim 26 wherein at least one structu

Assignees

• Micron Technology Inc

Inventors

• Tapias Nicholas R
• Li Andrew
• Saxler Adam W
• Shrotri Kunal
• Byers Erik R
• King Matthew J
• Tran Diem Thy N
• Ng Wei Yeeng
• Khandekar Anish A

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10P14/27

  using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials · CPC title