Multilayer electronic component

Patent metadata

Field	Value
Publication number	US-11804331-B2
Application number	US-202117375323-A
Country	US
Kind code	B2
Filing date	Jul 14, 2021
Priority date	Nov 18, 2020
Publication date	Oct 31, 2023
Grant date	Oct 31, 2023

Abstract

A multilayer electronic component includes: a body including dielectric layers; side margin portions disposed on side surfaces of the body, respectively; and external electrodes disposed on end surfaces of the body, respectively. The body includes a capacitance forming portion including internal electrodes disposed alternately with the dielectric layers and cover portions disposed on upper and lower surfaces of the capacitance forming portion, respectively. Ga2/Ga1 is 0.8 or more and less than 1.0 and Ga2/Gc1 is 0.8 or more and less than 1.0. a1 is a central portion of the capacitance forming portion, a2 is a boundary portion between the capacitance forming portion and the cover portion in the capacitance forming portion, and c1 is a boundary portion between the capacitance forming portion and the cover portion in the cover portion. Ga1, Ga2, and Gc1 are average sizes of dielectric grains at a1, a2, and c1, respectively.

First claim

What is claimed is:

1. A multilayer electronic component comprising:
a body including a plurality of dielectric layers and having first and second surfaces opposing each other in a first direction, third and fourth surfaces connected to the first and second surfaces and opposing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other in a third direction;
side margin portions disposed on the fifth and sixth surfaces, respectively; and
external electrodes disposed on the third and fourth surfaces, respectively,
wherein the body includes a capacitance forming portion including internal electrodes disposed alternately with the dielectric layers and cover portions disposed on upper and lower surfaces of the capacitance forming portion in the first direction, respectively, and
Ga2/Ga1 is 0.8 or more and less than 1.0 and Ga2/Gc1 is 0.8 or more and less than 1.0, in which a1 is a central portion of the capacitance forming portion, a2 is a boundary portion between the capacitance forming portion and one of the cover portions in the capacitance forming portion, c1 is a boundary portion between the capacitance forming portion and the one of the cover portions in the one of the cover portions, Ga1 is an average size of dielectric grains at a1, Ga2 is an average size of dielectric grains at a2, and Gc1 is an average size of dielectric grains at c1.

2. The multilayer electronic component of claim 1 , wherein a1 is a rectangular region disposed at a center of the body in the first and third directions, having a length of Ta/3 in the first direction, and having a length of Wa/3 in the third direction, a2 is a rectangular region disposed at a center of the body in the third direction, having a length of Ta/6 in the first direction, and having a length of Wa/3 in the third direction, and c1 is a rectangular region disposed at the center of the body in the third direction, having a length of Tc/6 in the first direction, and having a length of Wa/3 in the third direction, in which Wa is a length of the capacitance forming portion in the third direction, Ta is a length of the capacitance forming portion in the first direction, and Tc is a length of the one of the cover portions in the first direction, and Wa, Ta, and Tc are measured in a cross section of the body cut in the first and third directions.

3. The multilayer electronic component of claim 2 , wherein a2 and c1 abut on a boundary between the capacitance forming portion and the one of the cover portions.

4. The multilayer electronic component of claim 3 , wherein the cross section of the body cut in the first and third directions is a cross section of the body cut in the first and third directions at a center of the body in the second direction.

5. The multilayer electronic component of claim 1 , wherein Gc1 is 200 nm or less.

6. The multilayer electronic component of claim 1 , wherein the internal electrodes include first internal electrodes exposed to the third, fifth and sixth surfaces and second internal electrodes exposed to the fourth, fifth and sixth surface.

7. The multilayer electronic component of claim 6 , wherein [(Gm1+Gc1)/2]/Ga1 is greater 0.8 and less than 1.5, in which m1 is a boundary portion between one of the side margin portions and the capacity forming portion in the one of the side margin portions and Gm1 is an average size of dielectric grains at m1.

8. The multilayer electronic component of claim 7 , wherein a1 is a rectangular region disposed at a center of the body in the first and third directions, having a length of Ta/3 in the first direction, and having a length of Wa/3 in the third direction, a2 is a rectangular region disposed at the center of the body in the third direction, having a length of Ta/6 in the first direction, and having a length of Wa/3 in the third direction, c1 is a rectangular region disposed at the center of the body in the third direction, having a length of Tc/6 in the first direction, and having a length of Wa/3 in the third direction, and m1 is a rectangular region disposed at a center of the body in the first direction, having a length of Ta/3 in the first direction, and having a length of Wm/6 in the third direction, in which Wa is a length of the capacitance forming portion in the third direction, Ta is a length of the capacitance forming portion in the first direction, Tc is a length of the one of the cover portions in the first direction, Wm is a length of the one of the side margin portions in the third direction, and Wa, Ta, Tc, and Wm are measured in a cross section of the body cut in the first and third directions.

9. The multilayer electronic component of claim 8 , wherein a2 and c1 abut on a boundary between the capacitance forming portion and the one of the cover portions, and m1 in the one of side margin portion abuts on a boundary between the capacity forming portion and the one of the side margin portions.

10. The multilayer electronic component of claim 9 , wherein the cross section of the body cut in the first and third directions is a cross section of the body cut in the first and third directions at a center of the body in the second direction.

11. The multilayer electronic component of claim 7 , wherein Gm1 is 180 nm or less.

12. The multilayer electronic component of claim 1 , wherein a thickness of one of the plurality of dielectric layers is 0.45 μm or less.

13. The multilayer electronic component of claim 1 , wherein a thickness of one of the internal electrodes is 0.45 μm or less.

14. A multilayer electronic component comprising:
a body including a plurality of dielectric layers and having first and second surfaces opposing each other in a first direction, third and fourth surfaces connected to the first and second surfaces and opposing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other in a third direction;
side margin portions disposed on the fifth and sixth surfaces, respectively; and
external electrodes disposed on the third and fourth surfaces, respectively,
wherein the body includes a capacitance forming portion including internal electrodes disposed alternately with the dielectric layers and cover portions disposed on upper and lower surfaces of the capacitance forming portion in the first direction, respectively, [(Gm1+Gc1)/2]/Ga1 is greater 0.8 and less than 1, in which a1 is a central portion of the capacitance forming portion, c1 is a boundary portion between the capacitance forming portion and one of the cover portions in the one of the cover portions, m1 is a boundary portion between one of the side margin portions and the capacity forming portion in the one of the side margin portions, Ga1 is an average size of dielectric grains at a1, Gc1 is an average size of dielectric grains at c1, and Gm1 is an average size of dielectric grains at m1, and
Ga2/Ga1 is 0.8 or more and less than 1.0, in which a2 is a boundary portion between the capacitance forming portion and one of the cover portions in the capacitance forming portion, and Ga2 is an average size of dielectric grains at a2.

15. The multilayer electronic component of claim 14 , wherein a1 is a rectangular region disposed at a center of the body in the first and third directions, having a length of Ta/3 in the first direction, and having a length of Wa/3 in the third direction, c1 is a rectangular region disposed at the center of the body in the third direction, having a length of Tc/6 in the first direction, and having a length of Wa/3 in the third direction, and m1 is a rectangular region dispos

Assignees

• Samsung Electro Mech

Inventors

• Kim Hyoung Uk
• Baik Seung In
• Hong Ji Su
• Jang Eun Ha
• Park Jae Sung
• Lee Chung Eun

Classifications

• H01G4/30 Primary

  Stacked capacitors (H01G4/33 takes precedence) · CPC title

• H01G4/008

  Selection of materials · CPC title

• H01G4/012

  Form of non-self-supporting electrodes · CPC title

• H01G4/1218

  based on titanium oxides or titanates (H01G4/1245 takes precedence) · CPC title

• H01G4/1227

  based on alkaline earth titanates · CPC title