Three-dimensional memory device with reduced local stress

Patent metadata

Field	Value
Publication number	US-11800707-B2
Application number	US-202016881268-A
Country	US
Kind code	B2
Filing date	May 22, 2020
Priority date	Mar 31, 2020
Publication date	Oct 24, 2023
Grant date	Oct 24, 2023

Abstract

Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including interleaved conductive layers and dielectric layers above the substrate, and a channel structure extending vertically through the memory stack. The channel structure includes a high dielectric constant (high-k) dielectric layer disposed continuously along a sidewall of the channel structure, a memory film over the high-k dielectric layer along the sidewall of the channel structure, and a semiconductor channel over the memory film along the sidewall of the channel structure.

First claim

What is claimed is:

1. A three-dimensional (3D) memory device, comprising:
a memory stack comprising interleaved conductive layers and dielectric layers; and
a channel structure extending vertically through the memory stack and comprising:
a high dielectric constant (high-k) dielectric layer disposed continuously along a sidewall of the channel structure, wherein the high-k dielectric layer comprises zirconium oxide;
a memory film over the high-k dielectric layer along the sidewall of the channel structure, the memory film comprising a tunneling layer, a storage layer, and a blocking layer; and
a semiconductor channel over the memory film along the sidewall of the channel structure,
wherein each of the conductive layers comprises a gate electrode and an adhesive layer vertically between the gate electrode and at least one of the dielectric layers,
wherein the adhesive layer is in direct contact with the gate electrode, the high-k dielectric layer, and the at least one of the dielectric layers,
wherein the memory stack comprises a lower memory deck and an upper memory deck, and the high-k dielectric layer comprises a jagged structure at a boundary area between the lower memory deck and the upper memory deck, and
wherein the high-k dielectric layer at a bottom of the upper memory deck does not overlap with the high-k dielectric layer at a top of the lower memory deck.

2. The 3D memory device of claim 1 , wherein the high-k dielectric layer does not extend between the gate electrode and the at least one of the dielectric layers.

3. The 3D memory device of claim 1 , wherein the channel structure comprises a lower channel structure extending vertically through the lower memory deck, and an upper channel structure extending vertically through the upper memory deck.

4. The 3D memory device of claim 1 , further comprising:
a semiconductor plug at a bottom of the channel structure.

5. The 3D memory device of claim 1 , wherein the high-k dielectric layer extends along a direction perpendicular to a contacting surface between the adhesive layer and the at least one of the dielectric layers.

6. The 3D memory device of claim 1 , wherein the high-k dielectric layer of the upper memory deck and the high-k dielectric layer of the lower memory deck are sequentially formed.

7. The 3D memory device of claim 6 , wherein the high-k dielectric layer of the upper memory deck is formed after the high-k dielectric layer of the lower memory deck.

8. A three-dimensional (3D) memory device, comprising:
a memory stack comprising interleaved conductive layers and dielectric layers; and
a channel structure extending vertically through the memory stack and comprising:
a high dielectric constant (high-k) dielectric layer disposed continuously along a sidewall of the channel structure;
a memory film over the high-k dielectric layer along the sidewall of the channel structure, the memory film comprising a tunneling layer, a storage layer, and a blocking layer; and
a semiconductor channel over the memory film along the sidewall of the channel structure,

wherein each of the conductive layers comprises a gate electrode and an adhesive layer vertically between the gate electrode and at least one of the dielectric layers,
wherein the adhesive layer is in direct contact with the gate electrode, the high-k dielectric layer, and the at least one of the dielectric layers,
wherein the memory stack comprises a lower memory deck and an upper memory deck, and the high-k dielectric layer comprises a jagged structure at a boundary area between the lower memory deck and the upper memory deck, and
wherein the high-k dielectric layer at a bottom of the upper memory deck does not overlap with the high-k dielectric layer at a top of the lower memory deck.

9. The 3D memory device of claim 8 , wherein the high-k dielectric layer comprises zirconium oxide.

10. The 3D memory device of claim 9 , wherein the high-k dielectric layer does not extend between the gate electrode and the at least one of the dielectric layers.

11. The 3D memory device of claim 8 , wherein the channel structure comprises a lower channel structure extending vertically through the lower memory deck, and an upper channel structure extending vertically through the upper memory deck.

12. The 3D memory device of claim 8 , further comprising:
a semiconductor plug at a bottom of the channel structure.

13. The 3D memory device of claim 8 , wherein the high-k dielectric layer extends along a direction perpendicular to a contacting surface between the adhesive layer and the at least one of the dielectric layers.

14. The 3D memory device of claim 8 , wherein the high-k dielectric layer of the upper memory deck and the high-k dielectric layer of the lower memory deck are sequentially formed.

15. The 3D memory device of claim 14 , wherein the high-k dielectric layer of the upper memory deck is formed after the high-k dielectric layer of the lower memory deck.

16. A three-dimensional (3D) memory device, comprising:
a memory stack comprising interleaved conductive layers and dielectric layers; and
a channel structure extending vertically through the memory stack and comprising:
a high dielectric constant (high-k) dielectric layer disposed continuously along a sidewall of the channel structure;
a memory film over the high-k dielectric layer along the sidewall of the channel structure, the memory film comprising a tunneling layer, a storage layer, and a blocking layer; and
a semiconductor channel over the memory film along the sidewall of the channel structure,

wherein each of the conductive layers comprises a gate electrode and an adhesive layer vertically between the gate electrode and at least one of the dielectric layers, and the high-k dielectric layer extends along a direction perpendicular to a contacting surface between the adhesive layer and the at least one of the dielectric layers,
wherein the adhesive layer is in direct contact with the gate electrode, the high-k dielectric layer, and the at least one of the dielectric layers,
wherein the memory stack comprises a lower memory deck and an upper memory deck, and the high-k dielectric layer comprises a jagged structure at a boundary area between the lower memory deck and the upper memory deck, and
wherein the high-k dielectric layer at a bottom of the upper memory deck does not overlap with the high-k dielectric layer at a top of the lower memory deck.

17. The 3D memory device of claim 16 , wherein the high-k dielectric layer comprises zirconium oxide.

18. The 3D memory device of claim 16 , wherein the high-k dielectric layer does not extend between the gate electrode and the at least one of the dielectric layers.

19. The 3D memory device of claim 16 , wherein the high-k dielectric layer of the upper memory deck and the high-k dielectric layer of the lower memory deck are sequentially formed.

20. The 3D memory device of claim 19 , wherein the high-k dielectric layer of the upper memory deck is formed after the high-k dielectric layer of the lower memory deck.

Assignees

• Yangtze Memory Tech Co Ltd

Inventors

• Peng Shuangshuang
• Geng Jingjing
• Wu Jiajia
• Li Tuo

Classifications

• H10D64/01352

  with sacrificial oxide · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/68

  Organic materials, e.g. photoresists · CPC title

• H10D64/037 Primary

  comprising charge-trapping insulators · CPC title

• H10B43/27 Primary

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title