Semiconductor device

Patent metadata

Field	Value
Publication number	US-11798998-B2
Application number	US-202217895042-A
Country	US
Kind code	B2
Filing date	Aug 24, 2022
Priority date	Feb 9, 2021
Publication date	Oct 24, 2023
Grant date	Oct 24, 2023

Abstract

A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor substrate;
a gate structure disposed on the semiconductor substrate;
a source region and a drain region, wherein the source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively; and
field plates disposed on the semiconductor substrate, wherein each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region, the gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plate, wherein a dimension of the field plate electrically connected with the gate structure is different from a dimension of the field plate electrically connected with the source region.

Assignees

• United Microelectronics Corp

Inventors

• Wang Yi-Chieh
• Lai Po-Chun
• Lin Ke-Feng
• Kuo Chen-An
• Jhou Ze-Wei

Classifications

• H10D84/83

  of only insulated-gate FETs [IGFET] · CPC title

• H10D30/65

  Lateral DMOS [LDMOS] FETs · CPC title

• H10D64/112 Primary

  comprising multiple field plate segments · CPC title

• H10D62/127

  of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs · CPC title

• H10D84/835

  comprising LDMOS · CPC title