Integrated capacitor with sidewall having reduced roughness

Patent metadata

Field	Value
Publication number	US-11798979-B2
Application number	US-202117156793-A
Country	US
Kind code	B2
Filing date	Jan 25, 2021
Priority date	Nov 10, 2016
Publication date	Oct 24, 2023
Grant date	Oct 24, 2023

Abstract

An integrated capacitor on a semiconductor surface on a substrate includes a capacitor dielectric layer including at least one silicon compound material layer on a bottom plate. The capacitor dielectric layer includes a pitted sloped dielectric sidewall. Each of the pits is at least partially filled by one of a plurality of noncontiguous dielectric portions. A conformal dielectric layer may be formed over the noncontiguous dielectric portions. A top metal layer provides a top plate of the capacitor.

First claim

The invention claimed is:

1. An integrated capacitor, comprising:
a semiconductor surface on a substrate;
a bottom plate above and electrically isolated from said semiconductor surface;
a dielectric feature comprising at least one silicon compound material layer having a sloped dielectric sidewall portion on said bottom plate;
a discontinuous dielectric layer, including noncontiguous dielectric portions, that at least partially fills pits on a surface of said sloped dielectric sidewall portion, said discontinuous dielectric layer having an interface with said sloped dielectric sidewall portion, and
a top plate on a top of said dielectric feature.

2. The integrated capacitor of claim 1 , wherein said dielectric feature is a stack of layers comprising primarily by thickness silicon oxide.

3. The integrated capacitor of claim 2 , wherein said dielectric feature further comprises at least one other layer of dielectric material between said silicon compound material layer and said top plate that comprises at least one of silicon nitride and silicon oxynitride.

4. The integrated capacitor of claim 1 , wherein said silicon compound material layer and said discontinuous dielectric layer comprise different materials.

5. The integrated capacitor of claim 4 , wherein said silicon compound material layer comprises a first silicon oxide material and said discontinuous dielectric layer comprises a second silicon oxide material.

6. The integrated capacitor of claim 1 , wherein said sloped dielectric sidewall portion is at an angle between 10 and 40 degrees relative to a top of said semiconductor surface.

7. The integrated capacitor of claim 1 , wherein a thickness of said dielectric feature is from 5 μm to 30 μm thick.

8. The integrated capacitor of claim 1 , wherein said integrated capacitor is part of an integrated circuit (IC) formed on said semiconductor surface.

9. The integrated capacitor of claim 8 , wherein said IC includes a plurality of said integrated capacitors.

10. The integrated capacitor of claim 8 , wherein said IC comprises at least one of a transmitter and a receiver.

11. An integrated capacitor, comprising:
a top plate and a bottom plate over a substrate;
a capacitor dielectric layer between the top and bottom plates, the capacitor dielectric layer having a sloped sidewall portion with a plurality of pits; and
a plurality of noncontiguous dielectric portions, each dielectric portion at least partially filling a corresponding one of the pits in the sloped sidewall portion.

12. The integrated capacitor of claim 11 , wherein the dielectric layer has a thickness of at least 0.2 μm.

13. The integrated capacitor of claim 11 , wherein said noncontiguous dielectric portions comprise TEOS oxide.

14. The integrated capacitor of claim 11 , wherein said noncontiguous dielectric portions comprise HDP oxide.

15. The integrated capacitor of claim 11 , further comprising a conformal dielectric layer over the capacitor dielectric layer, the conformal dielectric layer covering each of the noncontiguous dielectric portions.

16. The integrated capacitor of claim 15 , wherein said conformal dielectric layer comprises a silicon nitride sublayer and a silicon oxynitride sublayer.

17. The integrated capacitor of claim 11 , wherein said sloped sidewall portion is at an angle between 10 and 40 degrees relative to a top surface of the substrate.

18. The integrated capacitor of claim 11 , wherein said capacitor dielectric layer has a thickness within a range from about 5 μm to about 30 μm.

19. The integrated capacitor of claim 11 , wherein said integrated capacitor is part of an integrated circuit formed on said substrate.

20. The integrated capacitor of claim 11 , further comprising a bottom plate bond pad portion that contacts the bottom plate and is formed from a same metal layer as the top plate, the sloped sidewall portion between the bottom plate bond pad portion and the top plate.

21. An integrated circuit, comprising:
a capacitor having top plate and a bottom plate over a semiconductor substrate;
a capacitor dielectric layer between the top and bottom plates, the capacitor dielectric layer having a sloped sidewall portion with a plurality of pits; and
a plurality of noncontiguous dielectric portions at least partially filling the plurality of pits in the sloped sidewall portion.

22. The integrated circuit of claim 21 , further comprising a receiver circuit over the semiconductor substrate, the receiver circuit connected to a first terminal of the capacitor.

23. The integrated circuit of claim 22 , wherein a second terminal of the capacitor is configured to receive an oscillating signal conveying data.

Assignees

• Texas Instruments Inc

Inventors

• Stewart Elizabeth Costner
• West Jeffrey A
• Bonifield Thomas D
• Gallegos Joseph Andre
• Chun Jay Sung
• Yu Zhiyi

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6684

  the compound comprising silicon and oxygen · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title