Micro-electro-mechanical system (MEMS) thermal sensor

US11796396B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11796396-B2
Application numberUS-202117216047-A
CountryUS
Kind codeB2
Filing dateMar 29, 2021
Priority dateSep 27, 2018
Publication dateOct 24, 2023
Grant dateOct 24, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The structure of a micro-electro-mechanical system (MEMS) thermal sensor and a method of fabricating the MEMS thermal sensor are disclosed. A method of fabricating a MEMS thermal sensor includes forming first and second sensing electrodes with first and second electrode fingers, respectively, on a substrate and forming a patterned layer with a rectangular cross-section between a pair of the first electrode fingers. The first and second electrode fingers are formed in an interdigitated configuration and suspended above the substrate. The method further includes modifying the patterned layer to have a curved cross-section between the pair of the first electrode fingers, forming a curved sensing element on the modified patterned layer to couple to the pair of the first electrodes, and removing the modified patterned layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A micro-electro-mechanical system (MEMS) device, comprising: a first sensing electrode with a plurality of first electrode fingers; a second sensing electrode with a plurality of second electrode fingers, wherein the pluralities of first and second electrode fingers are arranged in an interdigitated configuration and suspended over a substrate; a curved sensing element coupled to adjacent first electrode fingers of the plurality of first electrode fingers, wherein the curved sensing element is configured to move the adjacent first electrodes and change a capacitance between the first and second sensing electrodes in response to a temperature sensed by the curved sensing element; and a circuitry, coupled to the first and second sensing electrodes, configured to measure the temperature based on the capacitance between the first and second sensing electrodes. 2. The MEMS device of claim 1 , wherein the curved sensing element is configured to move the adjacent first electrode fingers away from each other in response to the temperature sensed by the curved sensing element. 3. The MEMS device of claim 1 , wherein the curved sensing element comprises: a first element with a first thermal expansion coefficient value; and a second element with a second thermal expansion coefficient value different from the first thermal expansion coefficient value. 4. The MEMS device of claim 1 , wherein the curved sensing element is coupled to the adjacent first electrode fingers with a convex side of the curved sensing element facing the adjacent first electrode fingers. 5. The MEMS device of claim 1 , wherein the curved sensing element is coupled to the adjacent first electrode fingers with a concave side of the curved sensing element facing the adjacent first electrode fingers. 6. The MEMS device of claim 1 , wherein the curved sensing element comprises: a first element with a first material; and a second element with a second material different from the first material. 7. The MEMS device of claim 1 , wherein the curved sensing element comprises: a first element with a first radius of curvature; and a second element with a second radius of curvature different from the first radius of curvature. 8. The MEMS device of claim 1 , further comprising: first and second pad layers disposed on the adjacent first electrode fingers; and a supporting element with first and second ends, wherein the first end is disposed on the first pad layer and the second end is disposed on the second pad layer, and wherein the curved sensing element is disposed on the supporting element. 9. The MEMS device of claim 1 , wherein the curved sensing element is in physical contact with the adjacent first electrode fingers. 10. The MEMS device of claim 1 , wherein the adjacent first electrode fingers have tapered structures. 11. A micro-electro-mechanical system (MEMS) device, comprising: a substrate; a first sensing electrode with first electrode fingers; a second sensing electrode with second electrode fingers, wherein the first and second sensing electrodes are disposed on the substrate, and wherein the first and second electrode fingers are suspended over the substrate and are arranged in an interdigitated configuration; and first and second curved sensing elements coupled to first and second pairs of the first electrode fingers, respectively, wherein the curved sensing element is configured to move the first and second pairs of the first electrode fingers and change a capacitance between the first and second sensing electrodes in response to a temperature sensed by the first and second curved sensing elements. 12. The MEMS device of claim 11 , wherein the first and second pairs of the first electrode fingers are adjacent to each other. 13. The MEMS device of claim 11 , wherein the first and second pairs of the first electrode fingers have a common first electrode finger. 14. The MEMS device of claim 11 , wherein a pair of the second electrode fingers is disposed between the first pair of the first electrode fingers. 15. The MEMS device of claim 11 , wherein each of the first and second curved sensing elements comprises: a first element with a first thermal expansion coefficient value; and a second element with a second thermal expansion coefficient value different from the first thermal expansion coefficient value. 16. The MEMS device of claim 11 , wherein the first and second electrode fingers have tapered structures. 17. A device, comprising: a substrate; a first sensing electrode with first electrode fingers; a second sensing electrode with second electrode fingers, wherein the first and second sensing electrodes are disposed on the substrate, and wherein the first and second electrode fingers are arranged in an interdigitated configuration; a curved sensing element with first and second ends, wherein the first end is coupled to a first one of the first electrode fingers and the second end is coupled to a second one of the first electrode fingers, and wherein the curved sensing element is configured to move the first and second ones of the first electrode fingers; and a circuitry, coupled to the first and second sensing electrodes, configured to measure a temperature based on the movements of the first and second ones of the first electrode fingers. 18. The device of claim 17 , wherein the curved sensing element comprises: a first element with a first thermal expansion coefficient value; and a second element with a second thermal expansion coefficient value different from the first thermal expansion coefficient value. 19. The device of claim 17 , wherein the curved sensing element comprises: a first element with a first radius of curvature; and a second element with a second radius of curvature greater than the first radius of curvature. 20. The device of claim 17 , wherein the first and second electrode fingers have tapered structures.

Assignees

Inventors

Classifications

  • G01K7/32Primary

    using change of resonant frequency of a crystal · CPC title

  • Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation · CPC title

  • Maintaining a critical distance between the structures to be released · CPC title

  • Temperature sensors · CPC title

  • Comb structures · CPC title

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What does patent US11796396B2 cover?
The structure of a micro-electro-mechanical system (MEMS) thermal sensor and a method of fabricating the MEMS thermal sensor are disclosed. A method of fabricating a MEMS thermal sensor includes forming first and second sensing electrodes with first and second electrode fingers, respectively, on a substrate and forming a patterned layer with a rectangular cross-section between a pair of the fir…
Who is the assignee on this patent?
Taiwan Semiconductor Mfg Co Ltd
What technology area does this patent fall under?
Primary CPC classification G01K7/32. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Oct 24 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 10 related publications on this page (citations in our corpus or others sharing the same primary CPC).