Polishing slurry and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-11795347-B2
Application number	US-202217676928-A
Country	US
Kind code	B2
Filing date	Feb 22, 2022
Priority date	Mar 13, 2019
Publication date	Oct 24, 2023
Grant date	Oct 24, 2023

Abstract

A polishing slurry including a hydrophilic nanocarbon particle having a nitrogen-containing functional group, and a weight ratio of a nitrogen element relative to a carbon element of the hydrophilic nanocarbon particle, the weight ratio expressed as N/C×100% is greater than or equal to about 5 wt %, and a method of manufacturing a semiconductor device using the polishing slurry.

First claim

What is claimed is:

1. A polishing slurry comprising a nanocarbon particle having a nitrogen-containing functional group,
wherein a weight ratio of a nitrogen element relative to a carbon element of the hydrophilic nanocarbon particle expressed as N/C×100% is greater than or equal to about 5 wt %.

2. The polishing slurry of claim 1 , wherein the weight ratio of a nitrogen element relative to a carbon element of the nanocarbon particle is about 5 wt % to about 80 wt %.

3. The polishing slurry of claim 1 , wherein the nitrogen-containing functional group is derived from at least one of ammonia, an ammonium salt, an amine compound, a polyamine compound, a nitro compound, an azo compound, hydroxides of each thereof, or hydrates of each thereof.

4. The polishing slurry of claim 1 , wherein the nitrogen-containing functional group comprises at least one of an amino group, a nitro group, a secondary amine group, a tertiary amine group, a quaternary amine group, a diamine group, a polyamine group, an azo group, or an amide group.

5. The polishing slurry of claim 1 , wherein the nanocarbon particle comprises at least one of fullerene, graphene, graphite, a carbon nanotube, or a carbon dot, each of which including at least one hydrophilic functional group.

6. The polishing slurry of claim 5 , wherein the hydrophilic functional group comprises at least one of a hydroxyl group, a carbonyl group, a carboxyl group, a sulfhydryl group, or a phosphate group.

7. The polishing slurry of claim 1 , wherein the nanocarbon particle has at least one hydrophilic functional group, and
the nanocarbon particle comprises on average 12 to 44 of the hydrophilic functional groups and the nitrogen-containing functional groups.

8. The polishing slurry of claim 7 , wherein the nitrogen-containing functional groups exist in a greater number of groups than the hydrophilic functional group.

9. The polishing slurry of claim 1 , further comprising a metal ion chemically fixed on a surface of the nanocarbon particle.

10. The polishing slurry of claim 9 , wherein the metal ion is derived from a soluble metal compound.

11. The polishing slurry of claim 1 , wherein the nanocarbon particle comprises hydroxyl fullerene.

12. A polishing slurry comprising a nanocarbon particle on which an oxidation catalyst is chemically fixed.

13. The polishing slurry of claim 12 , wherein the oxidation catalyst comprises a nitrogen-containing oxidation catalyst.

14. The polishing slurry of claim 13 , wherein the nitrogen-containing oxidation catalyst is derived from at least one of ammonia, an ammonium salt, an amine compound, a polyamine compound, a nitro compound, an azo compound, hydroxides of each thereof, or hydrates of each thereof.

15. The polishing slurry of claim 13 , wherein the nitrogen-containing oxidation catalyst comprises at least one of an amino group, a nitro group, a secondary amine group, a tertiary amine group, a quaternary amine group, a diamine group, a polyamine group, an azo group, or an amide group.

16. The polishing slurry of claim 13 , wherein the oxidation catalyst further comprises a metal-containing oxidation catalyst.

17. The polishing slurry of claim 12 , wherein the nanocarbon particle comprises at least one of fullerene, graphene, graphite, a carbon nanotube, or a carbon dot, each of which including at least one hydrophilic functional group.

18. The polishing slurry of claim 13 , wherein the hydrophilic functional group comprises at least one of a hydroxyl group, a carbonyl group, a carboxyl group, a sulfhydryl group, or a phosphate group.

19. The polishing slurry of claim 12 , wherein the nanocarbon particle has at least one hydrophilic functional group, and the nanocarbon particle comprises on average 12 to 44 of the hydrophilic functional groups and the nitrogen-containing functional groups.

20. The polishing slurry of claim 19 , wherein the oxidation catalyst exists on average in a greater number than the hydrophilic functional group.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Takai Kenji
• Miyazaki Eigo
• Kim Do Yoon

Classifications

• H10P52/403 Primary

  of conductive or resistive materials · CPC title

• H10W20/077

  on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence) · CPC title

• H10W20/062

  by smoothing of conductive parts, e.g. by planarisation · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/033

  in openings in dielectrics · CPC title