Image sensor, pixel array, and operation method of the image sensor
US-2021337154-A1 · Oct 28, 2021 · US
US11792545B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11792545-B2 |
| Application number | US-202217678268-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 23, 2022 |
| Priority date | Jul 7, 2021 |
| Publication date | Oct 17, 2023 |
| Grant date | Oct 17, 2023 |
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An image sensor including: a pixel array including first and second pixels connected to a column line; a row driver to provide the first pixel with a first selection signal based on a clamp voltage, and to provide the second pixel with a second selection signal based on a selection voltage, wherein the first pixel outputs a first output voltage in response to the first selection signal, and the second pixel outputs a second output voltage in response to the second selection signal, wherein the first and second output voltages are output as a pixel signal through the column line, wherein a voltage of the pixel signal corresponds to a voltage obtained by clamping the second output voltage with the first output voltage, and wherein a change in a voltage level of the first output voltage due to a temperature is compensated for by the clamp voltage.
Opening claim text (preview).
What is claimed is: 1. An image sensor, comprising: a pixel array including a first pixel and a second pixel, wherein the first pixel and the second pixel are connected to a column line; a row driver configured to provide the first pixel with a first selection signal based on a clamp voltage, and to provide the second pixel with a second selection signal based on a selection voltage, wherein the first pixel outputs a first output voltage in response to the first selection signal, and the second pixel outputs a second output voltage in response to the second selection signal, wherein the first output voltage and the second output voltage are output as a pixel signal through the column line, wherein a voltage of the pixel signal corresponds to a voltage obtained by clamping the second output voltage with the first output voltage, and wherein a change in a voltage level of the first output voltage due to a temperature is compensated for by the clamp voltage. 2. The image sensor of claim 1 , further comprising: a clamp voltage generating circuit configured to generate the clamp voltage. 3. The image sensor of claim 2 , wherein the clamp voltage generating circuit includes: a bandgap reference circuit configured to generate a first voltage; and a buffer circuit configured to generate the clamp voltage based on the first voltage. 4. The image sensor of claim 3 , wherein a voltage level of the first voltage decreases as the temperature increases. 5. The image sensor of claim 3 , wherein the clamp voltage generating circuit further includes: a temperature feedback circuit configured to generate a second voltage based on a temperature signal including information about a temperature change and to adjust the second voltage to correspond to the temperature change, and wherein, as the temperature increases, a voltage level of the clamp voltage is decreased by the first voltage and the second voltage. 6. The image sensor of claim 1 , wherein the first pixel includes a first select transistor connected with the column line, wherein the second pixel includes a second select transistor connected with the column line, wherein the row driver provides the first selection signal, which is based on the clamp voltage, to a gate terminal of the first select transistor and provides the second selection signal, which is based on the selection voltage, to a gate terminal of the second select transistor, wherein the first select transistor has a threshold voltage, a voltage level of which decreases as the temperature increases, and wherein a change in the voltage level of the first output voltage due to a variation in the temperature, is compensated for by the clamp voltage. 7. The image sensor of claim 1 , wherein the row driver includes: a selection controller configured to provide the clamp voltage or the selection voltage based on a plurality of control signals. 8. An electronic circuit, comprising: a clamp voltage generating circuit configured to generate a first voltage, wherein a voltage level of the first voltage decreases as a temperature increases; and a transistor directly connected to a column line of a pixel array and configured to output a second voltage based on the first voltage, wherein a voltage level of a threshold voltage of the transistor decreases as the temperature increases, wherein a change in a voltage level of the second voltage, which results from a change in the temperature, is compensated for by using the first voltage. 9. The electronic circuit of claim 8 , wherein the clamp voltage generating circuit includes: a bandgap reference circuit configured to generate a third voltage; and a buffer circuit configured to generate the first voltage based on the third voltage. 10. The electronic circuit of claim 9 , wherein a voltage level of the third voltage decreases as the temperature increases. 11. The electronic circuit of claim 9 , wherein the clamp voltage generating circuit includes: a temperature feedback circuit configured to generate a fourth voltage based on a temperature signal including information about a temperature change. 12. The electronic circuit of claim 11 , wherein the temperature feedback circuit adjusts a level of the fourth voltage to correspond to temperature change, and wherein, as the temperature increases, a voltage level of the first voltage is decreased by the third voltage and the fourth voltage. 13. The electronic circuit of claim 11 , further comprising: a temperature sensor configured to sense the temperature change and to generate the temperature signal. 14. The electronic circuit of claim 13 , wherein the temperature sensor includes a thermocouple, a resistance thermometer, a thermistor, an integrated circuit temperature sensor, a magnetic temperature sensor, a thermopile, or a pyroelectric temperature sensor. 15. The electronic circuit of claim 9 , wherein the bandgap reference circuit includes: a first current generator including a first resistor, and configured to generate a first current proportional to the temperature; a second current generator configured to output a second current that is a mirrored version of the first current to an output node at which the first voltage is formed; a second resistor connected with the output node, and configured to receive the second current; and a bipolar junction transistor connected with the second resistor. 16. The electronic circuit of claim 15 , wherein the clamp voltage generating circuit further includes: a temperature feedback circuit configured to generate a fourth voltage based on a temperature signal including information about a temperature change, wherein a voltage level of a voltage across the second resistor increases as the temperature increases, and wherein the temperature change is sensed based on the increased voltage level. 17. The electronic circuit of claim 15 , wherein a voltage level of the third voltage decreases as the temperature increases. 18. An operating method of an electronic device, comprising: generating a clamp voltage, wherein a voltage level of the clamp voltage decreases as a temperature increases; applying the clamp voltage to a transistor that is directly connected to a column line of a pixel array, wherein a voltage level of a threshold voltage of the transistor decreases as the temperature increases; and compensating for a change in a voltage level of an output voltage of the transistor, which is due to a change in the threshold voltage, based on the clamp voltage. 19. The method of claim 18 , wherein the generating of the clamp voltage includes: sensing a temperature change; generating a temperature compensation voltage based on the temperature change; and generating the clamp voltage based on the temperature compensation voltage and a first voltage that a bandgap reference circuit generates. 20. The method of claim 19 , wherein the temperature change is based on a change in a voltage level of an internal voltage of the bandgap reference circuit.
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