Method for detecting gas tightness of furnace tube device

Patent metadata

Field	Value
Publication number	US-11788923-B2
Application number	US-202117444597-A
Country	US
Kind code	B2
Filing date	Aug 6, 2021
Priority date	Dec 30, 2020
Publication date	Oct 17, 2023
Grant date	Oct 17, 2023

Abstract

A method for detecting a gas tightness of a furnace tube device includes: providing a test wafer; conveying the test wafer into the furnace tube device; depositing a dielectric layer on the test wafer; measuring a thickness and a Goodness of Fit (GOF) of the dielectric layer formed on the test wafer by a thickness measuring machine; and judging the gas tightness of the furnace tube device according to the GOF.

First claim

What is claimed is:

1. A method for detecting a gas tightness of a furnace tube device, comprising:
providing a test wafer;
conveying the test wafer into the furnace tube device, and depositing a dielectric layer on the test wafer;
conveying the test wafer deposited with the dielectric layer to a thickness measuring machine, to measure a thickness and a Goodness of Fit (GOF) of the dielectric layer; and
verifying the gas tightness of the furnace tube device according to the GOF of the dielectric layer,
wherein the test wafer comprises:
a substrate; and
a tungsten metal layer formed on the substrate.

2. The method for detecting the gas tightness of the furnace tube device of claim 1 , wherein
the GOF of the dielectric layer is a matching degree value between an actual measurement spectrum measured by the thickness measuring machine and a theoretical measurement spectrum simulated by the thickness measuring machine.

3. The method for detecting the gas tightness of the furnace tube device of claim 1 , wherein the verifying the gas tightness of the furnace tube device according to the GOF of the dielectric layer comprises:
when the GOF is in the range of 0.95-1, it indicates that the gas tightness of the furnace tube device meets requirements; and
when the GOF is less than 0.95, it indicates that the gas tightness of the furnace tube device does not meet requirements.

4. The method for detecting the gas tightness of the furnace tube device of claim 1 , wherein the tungsten metal layer has a thickness of 20 nm-80 nm.

5. The method for detecting the gas tightness of the furnace tube device of claim 1 , wherein the test wafer further comprises:
an insulating layer, located between the substrate and the tungsten metal layer.

6. The method for detecting the gas tightness of the furnace tube device of claim 5 , wherein the insulating layer has a thickness of 80 nm-160 nm.

7. The method for detecting the gas tightness of the furnace tube device of claim 1 , wherein the conveying the test wafer into the furnace tube device and depositing the dielectric layer on the test wafer comprises:
conveying the test wafer to a wafer boat, and sealing the wafer boat and the test wafer in the furnace tube device;
vacuumizing the furnace tube device;
heating the furnace tube device, to reach a certain reaction temperature in the furnace tube device; and
introducing a reaction gas into the furnace tube device to form the dielectric layer on the test wafer, when the reaction temperature in the furnace tube device is stable.

8. The method for detecting the gas tightness of the furnace tube device of claim 7 , after the conveying the test wafer into furnace tube device and depositing the dielectric layer on the test wafer and before the step of conveying the test wafer deposited with the dielectric layer to the thickness measuring machine, further comprising:
introducing an inert gas into the furnace tube device, the inert gas being used for discharging the remaining reaction gas out of the furnace tube device.

9. The method for detecting the gas tightness of the furnace tube device of claim 8 , wherein a material of the dielectric layer is silicon nitride.

10. The method for detecting the gas tightness of the furnace tube device of claim 8 , wherein the dielectric layer has a thickness of 50 nm-150 nm.

11. The method for detecting the gas tightness of the furnace tube device of claim 7 , prior to the conveying the test wafer to the wafer boat, further comprising:
conveying a plurality of baffles to the wafer boat, the wafer boat comprising a plurality of protrusion components spaced apart, each protrusion component being provided with the baffle or the test wafer thereon, and the baffle, the test wafer and the wafer boat constituting a test wafer cylinder.

12. The method for detecting the gas tightness of the furnace tube device of claim 11 , wherein the protrusion components comprise first protrusion components and second protrusion components, the first protrusion component being located between two of the second protrusion components, and wherein the first protrusion component is configured for placing the test wafer and the second protrusion component is configured for placing the baffle.

13. The method for detecting the gas tightness of the furnace tube device of claim 11 , wherein there are three test wafers, and the three test wafers are located at an upper portion, a middle portion, and a lower portion of the test wafer cylinder respectively.

14. The method for detecting the gas tightness of the furnace tube device of claim 11 , wherein there is one test wafer, and wherein the one test wafer is located at an upper portion of the test wafer cylinder, or located at a middle portion of the test wafer cylinder, or located at a lower portion of the test wafer cylinder.

15. The method for detecting the gas tightness of the furnace tube device of claim 11 , wherein a material of the baffle is silicon.

Assignees

• Changxin Memory Tech Inc

Inventors

• Gao Zhipeng

Classifications

• G01M3/30 Primary

  using progressive displacement of one fluid by another · CPC title

• G01M3/26 Primary

  by measuring rate of loss or gain of fluid, e.g. by pressure-responsive devices, by flow detectors · CPC title

• G01B11/0616

  of coating · CPC title