Cutting tool and method for manufacturing the same

US11786975B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11786975-B2
Application numberUS-202217794989-A
CountryUS
Kind codeB2
Filing dateJan 25, 2022
Priority dateJan 25, 2022
Publication dateOct 17, 2023
Grant dateOct 17, 2023

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Abstract

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A cutting tool includes a substrate and a coating film, wherein the coating film has a first layer formed from a plurality of hard grains, the hard grains are made of TiSiCN having a cubic crystal structure, the hard grains have a lamellar structure in which a layer having a relatively high silicon concentration and a layer having a relatively low silicon concentration are alternately stacked, and a maximum value of percentage of number ASi of silicon atoms to a sum of the number ASi of silicon atoms and number ATi of titanium atoms in a grain boundary region between the hard grains, {ASi/(ASi+ATi)}×100, is larger than an average value of percentage of number BSi of silicon atoms to a sum of the number BSi of silicon atoms and number BTi of titanium atoms in the first layer, {BSi/(BSi+BTi)}×100.

First claim

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The invention claimed is: 1. A cutting tool comprising a substrate and a coating film disposed on the substrate, wherein the coating film comprises a first layer formed from a plurality of hard grains, the hard grains are made of TiSiCN having a cubic crystal structure, the hard grains have a lamellar structure in which a layer having a first silicon concentration and a layer having a second silicon concentration, lower than the first silicon concentration, are alternately stacked, the first silicon concentration corresponds to a number A Si of silicon atoms divided by a sum of a) a number A Si of silicon atoms and b) a number A Ti of titanium atoms in a grain boundary region between the hard grains, {A Si /(A Si +A Ti )}, the second silicon concentration corresponds to a number B Si of silicon atoms divided by a sum of c) a number B Si of silicon atoms and d) a number B Ti of titanium atoms in the first layer, {B Si /(B Si +B Ti )}, and a maximum value of A Si /(A Si +A Ti ) is greater than an average value of B Si /(B Si +B Ti ). 2. The cutting tool according to claim 1 , wherein a difference between the maximum value of {A Si /(A Si +A Ti )} and the average value of {B Si /(B Si +B Ti )} is 0.005 or more. 3. The cutting tool according to claim 1 , wherein the average value of {B Si /(B Si +B Ti )} is 0.005 or more and 1.0 or less. 4. The cutting tool according to claim 1 , wherein the first layer has a thickness of 3 μm or more and 15 μm or less, and the coating film has a thickness of 3 μm or more and 30 μm or less. 5. The cutting tool according to claim 1 , wherein the maximum value of the first silicon concentration is measured by subjecting the grain boundary region in a cross section along a normal line of a surface of the coating film, to line analysis at a length of 60 nm or more in a direction perpendicular to an extension direction of the grain boundary region, by use of STEM-EDX, and the average value of the second silicon concentration is measured by subjecting a rectangular measurement field of view of 100 nm×100 nm provided in the first layer in the cross section, to rectangular analysis by use of STEM-EDX. 6. The cutting tool according to claim 1 , wherein the hard grains have an average aspect ratio of 2 or more. 7. A method for manufacturing the cutting tool according to claim 1 , comprising: step 1 of providing a substrate, step 2 of forming a coating film on the substrate, and step 3 of subjecting the coating film to a heat treatment to obtain a cutting tool, wherein the coating film formed in step 2 comprises a first layer formed from a plurality of hard grains, the hard grains are made of TiSiCN having a cubic crystal structure, and the hard grains have a lamellar structure in which a layer having a first silicon concentration and a layer having a second silicon concentration lower than the first silicon concentration, are alternately stacked. 8. The method for manufacturing the cutting tool according to claim 7 , wherein the heat treatment in step 3 comprises heating the coating film at 1050° C. or more and 1100° C. or less in a hydrogen atmosphere at a pressure of 850 hPa or more and 950 hPa or less for 5 minutes or more and 30 minutes or less. 9. The method for manufacturing the cutting tool according to claim 7 , wherein step 2 comprises step 2a of forming the first layer by a CVD method with a CVD apparatus, step 2a comprises step 2a-1 of spraying a TiCl 4 gas, a SiCl 4 gas and a CH 3 CN gas toward a surface of the substrate, the TiCl 4 gas is sprayed through a plurality of first spray holes provided on a nozzle of the CVD apparatus, the SiCl 4 gas is sprayed through a plurality of second spray holes provided on the nozzle, the CH 3 CN gas is sprayed through a plurality of third spray holes provided on the nozzle, the nozzle is rotated in step 2a-1, the plurality of second spray holes include a second-first spray hole and a second-second spray hole, and a diameter r1 of the second-first spray hole is different from a diameter r2 of the second-second spray hole.

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What does patent US11786975B2 cover?
A cutting tool includes a substrate and a coating film, wherein the coating film has a first layer formed from a plurality of hard grains, the hard grains are made of TiSiCN having a cubic crystal structure, the hard grains have a lamellar structure in which a layer having a relatively high silicon concentration and a layer having a relatively low silicon concentration are alternately stacked, …
Who is the assignee on this patent?
Sumitomo Electric Industries
What technology area does this patent fall under?
Primary CPC classification B23B27/148. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Oct 17 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).