Methods for reflector film growth

Patent metadata

Field	Value
Publication number	US-11776980-B2
Application number	US-202016819023-A
Country	US
Kind code	B2
Filing date	Mar 13, 2020
Priority date	Mar 13, 2020
Publication date	Oct 3, 2023
Grant date	Oct 3, 2023

Abstract

Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.

First claim

What is claimed is:

1. A method of forming a reflector film stack, the method comprising:
forming a conformal liner on a substrate having at least one structure formed therein, the at least one structure having a bottom and sidewalls;
exposing the substrate to a growth inhibitor to deactivate a top portion of the substrate;
forming a reflector layer on the liner within the at least one structure to an inhibited thickness;
reactivating the top portion of the substrate; and
filling the at least one structure with the reflector layer.

2. The method of claim 1 , wherein the liner comprises titanium and is deposited using TiCl 4 , tetrakis(dimethylamino)titanium (TDMAT) or 1-methyl-3,6-bis(trimethylsilyl)-1,4-cyclohexadiene.

3. The method of claim 1 , wherein the liner comprises tantalum and is deposited using one or more of TaCl 5 or pentakis(diemthylamino)tantalum (PDMAT).

4. The method of claim 1 , wherein the liner comprises cobalt and is deposited using dicobalt hexacarbonyl tert-butylacetylene (CCTBA).

5. The method of claim 1 , wherein the liner comprises nickel and is deposited using tetrakis(trifluorophosphine)nickel (Ni(PF 3 ) 4 ).

6. The method of claim 1 , wherein the liner comprises aluminum and is deposited using one or more of dimethylaluminum hydride (DMAH), triethylaluminum (TEA) or trimethylaluminum (TMA).

7. The method of claim 1 , wherein the liner has a thickness in the range of 30 Å to 50 Å.

8. The method of claim 1 , wherein the reflector layer has a different composition than the liner.

9. The method of claim 1 , wherein the reflector layer comprises aluminum and is deposited using one or more of dimethylaluminum hydride (DMAH), triethylaluminum (TEA) or trimethylaluminum (TMA).

10. The method of claim 1 , wherein the reflector layer comprises tungsten and is deposited using tungsten pentachloride (WCl 5 ).

11. The method of claim 1 , wherein the reflector layer comprises molybdenum and is deposited using one or more of molybdenum pentachloride (MoCl 5 ) or molybdenum dichloride dioxide (MoO 2 Cl 2 ).

12. The method of claim 1 , wherein the reflector layer comprises copper and is deposited using one or more of copper (I) chloride (CuCl) or copper (II) chloride (CuCl 2 ).

13. The method of claim 1 , wherein the liner comprises TiAlC or one or more of titanium (Ti), tantalum (Ta), cobalt (Co), nickel (Ni), molybdenum (Mo) or aluminum (Al).

14. The method of claim 1 , wherein the reflector layer comprises one or more of aluminum, tungsten, molybdenum or copper.

15. The method of claim 1 , wherein the conformal liner comprises titanium aluminum carbide (TiAlC), the reflector layer comprises aluminum, exposing the substrate to the growth inhibitor comprises soaking the substrate in triethylaluminum (TEA), and reactivating the top portion of the substrate comprises exposing the substrate to titanium tetrachloride (TiCl 4 ).

16. The method of claim 1 , wherein the reflector layer is formed within the same process tool as the liner without exposure to oxygen between.

17. A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing tool, causes the processing tool to perform operations of:
depositing a conformal liner on a substrate in a first process chamber connected to a central transfer station having a robot therein;
moving the substrate from the first process chamber to a second process chamber connected to the central transfer station so that the substrate is not exposed to oxygen;
exposing the substrate to a growth inhibitor in one or more of the first process chamber, the central transfer station or the second process chamber;
forming a reflector layer on the liner in the second process chamber; and

exposing the substrate to a reactivating agent.

Assignees

• Applied Materials Inc

Inventors

• Li Luping
• Wrench Jacqueline S
• Chen Wen Ting
• Yang Yixiong
• Hwang In Seok
• Chen Shih Chung
• Gandikota Srinivas

Classifications

• H10P72/0454

  surrounding a central transfer chamber · CPC title

• H10F39/807 Primary

  Pixel isolation structures · CPC title

• H10F39/8067

  Reflectors · CPC title

• H10F39/024 Primary

  of coatings or optical elements · CPC title

• H01L27/1463 Primary

  Electricity · mapped topic