Multilayer ceramic capacitor and manufacturing method of the same
US-2019385794-A1 · Dec 19, 2019 · US
US11776754B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11776754-B2 |
| Application number | US-202117510549-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 26, 2021 |
| Priority date | Apr 26, 2019 |
| Publication date | Oct 3, 2023 |
| Grant date | Oct 3, 2023 |
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An electronic component including a component body, and an external electrode on a surface of the component body. The external electrode includes a layer having an alloy of at least one first metal and at least one second metal, the at least one first metal is selected from the group consisting of metals of Group 9 to Group 11 of the Periodic Table, the at least one second metal has a melting point higher than that of the at least one first metal. In the layer having the alloy, a concentration of the at least one second metal continuously changes in a thickness direction of the external electrode, at least one first portion has the concentration of the at least one second metal increasing in the thickness direction, and at least one second portion has the concentration of the at least one second metal decreasing in the thickness direction.
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The invention claimed is: 1. An electronic component comprising: a component body; and an external electrode on a surface of the component body, wherein the external electrode includes a layer having an alloy of at least one first metal and at least one second metal, the at least one first metal is selected from the group consisting of metals of Group 9 to Group 11 of the Periodic Table of the Elements, the at least one second metal has a melting point higher than a melting point of the at least one first metal, in the layer having the alloy, a concentration of the at least one second metal continuously changes in a thickness direction of the external electrode, and at least one first portion of the layer having the alloy has the concentration of the at least one second metal increasing in the thickness direction, and at least one second portion of the layer having the alloy has the concentration of the at least one second metal decreasing in the thickness direction, and wherein the layer having the alloy includes a plurality of layers laminated in the thickness direction of the external electrode, each of the plurality of layers having a different concentration of the at least one second metal. 2. The electronic component according to claim 1 , wherein the layer having the alloy has at least one third portion where a concentration of the at least one first metal increases in the thickness direction of the external electrode and at least one fourth portion where the concentration of the at least one first metal decreases in the thickness direction of the external electrode. 3. The electronic component according to claim 1 , wherein the layer having the alloy includes a plurality of areas where the concentrations of the at least one second metal are different from each other. 4. The electronic component according to claim 1 , wherein, in the layer having the alloy, a ratio of the at least one second metal contained therein is in a range of 1 to 99% by mass. 5. The electronic component according to claim 1 , wherein the at least one first metal is selected from the group consisting of Ni, Co, Ag, and Cu. 6. The electronic component according to claim 5 , wherein the at least one second metal is selected from the group consisting of W, Re, Os, Mo, Nb, Ir, Ru, Rh, Cr, Pt, Ti, Lu, Pd, Fe, and Co. 7. The electronic component according to claim 1 , wherein the at least one second metal is selected from the group consisting of W, Re, Os, Mo, Nb, Ir, Ru, Rh, Cr, Pt, Ti, Lu, Pd, Fe, and Co. 8. The electronic component according to claim 1 , wherein the alloy is an Ni—Fe based alloy. 9. A mounting structure comprising: the electronic component according to claim 1 ; and a substrate having an electrode portion, wherein the external electrode of the electronic component is joined to the electrode portion of the substrate through a solder joint portion. 10. The mounting structure according to claim 9 , wherein the at least one first metal is selected from the group consisting of Ni, Co, Ag, and Cu. 11. The mounting structure according to claim 10 , wherein the at least one second metal is selected from the group consisting of W, Re, Os, Mo, Nb, Ir, Ru, Rh, Cr, Pt, Ti, Lu, Pd, Fe, and Co. 12. The mounting structure according to claim 9 , wherein the at least one second metal is selected from the group consisting of W, Re, Os, Mo, Nb, Ir, Ru, Rh, Cr, Pt, Ti, Lu, Pd, Fe, and Co. 13. The mounting structure according to claim 9 , wherein the alloy is an Ni—Fe based alloy, an Ni—Pd based alloy, or an Ni—W alloy. 14. The mounting structure according to claim 9 , wherein the alloy is an Ni—Fe based alloy. 15. The mounting structure according to claim 9 , wherein an intermetallic compound derived from the external electrode and derived from the solder joint portion is present proximal to an interface between the external electrode and the solder joint portion. 16. The mounting structure according to claim 9 , wherein the layer having the alloy has at least one third portion where a concentration of the at least one first metal increases in the thickness direction of the external electrode and at least one fourth portion where the concentration of the at least one first metal decreases in the thickness direction of the external electrode. 17. An electronic component comprising: a component body; and an external electrode on a surface of the component body, wherein the external electrode includes a layer having an alloy of at least one first metal and at least one second metal, the at least one first metal is selected from the group consisting of metals of Group 9 to Group 11 of the Periodic Table of the Elements, the at least one second metal has a melting point higher than a melting point of the at least one first metal, in the layer having the alloy, a concentration of the at least one second metal continuously changes in a thickness direction of the external electrode, and at least one first portion of the layer having the alloy has the concentration of the at least one second metal increasing in the thickness direction, and at least one second portion of the layer having the alloy has the concentration of the at least one second metal decreasing in the thickness direction, and wherein there are 1 to 100, per 1 μm, of the at least one first portion where the concentration of the at least one second metal increases. 18. A mounting structure comprising: an electronic component comprising: a component body; and an external electrode on a surface of the component body, wherein the external electrode includes a layer having an alloy of at least one first metal and at least one second metal, the at least one first metal is selected from the group consisting of metals of Group 9 to Group 11 of the Periodic Table of the Elements, the at least one second metal has a melting point higher than a melting point of the at least one first metal, in the layer having the alloy, a concentration of the at least one second metal continuously changes in a thickness direction of the external electrode, and at least one first portion of the layer having the alloy has the concentration of the at least one second metal increasing in the thickness direction, and at least one second portion of the layer having the alloy has the concentration of the at least one second metal decreasing in the thickness direction; and a substrate having an electrode portion, wherein the external electrode of the electronic component is joined to the electrode portion of the substrate through a solder joint portion, wherein an intermetallic compound derived from the external electrode and derived from the solder joint portion is present proximal to an interface between the external electrode and the solder joint portion, and wherein the intermetallic compound is an FeSn 2 based alloy. 19. A mounting structure comprising: an electronic component comprising: a component body; and an external electrode on a surface of the component body, wherein the external electrode includes a layer having an alloy of at least one first metal and at least one second metal, the at least one first metal is selected from the group consisting of metals of Group 9 to Group 11 of the Periodic Table of the Elements, the at least one second metal has a melting point higher than a melting point of the at least one first metal, in the layer having the alloy, a concentration of the at least one second metal continuously changes in a thickness direction of the external electrode, and at lea
characterised by the material of the terminals · CPC title
for surface mounting, e.g. chip capacitors · CPC title
the terminals embracing or surrounding the capacitive element, e.g. caps (H01G4/252 takes precedence) · CPC title
Stacked capacitors (H01G4/33 takes precedence) · CPC title
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