Methods and apparatus for removing abrasive particles
US-2020306931-A1 · Oct 1, 2020 · US
US11772226B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11772226-B2 |
| Application number | US-201916376274-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 5, 2019 |
| Priority date | Apr 13, 2018 |
| Publication date | Oct 3, 2023 |
| Grant date | Oct 3, 2023 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A polishing apparatus includes a holding table having a holding surface that holds a wafer, a polishing unit in which a polishing pad having an opening at the center of a polishing surface that polishes the wafer is mounted to a spindle and is rotated, a slurry supply unit that supplies slurry to the polishing surface of the polishing pad, and an air supply unit that shuts an upper end of a penetrating path penetrating through the axial center of rotation of the polishing pad and the spindle and supplies air into the penetrating path.
Opening claim text (preview).
What is claimed is: 1. A polishing apparatus comprising: a holding table having a holding surface that holds a wafer; a polishing unit in which a polishing pad having an opening at a center of a polishing surface that polishes the wafer held by the holding table is mounted to a spindle and is rotated; a slurry supply unit that supplies slurry to the polishing surface of the polishing pad; and an air supply unit connected to an upper end of a penetrating path penetrating through an axial center of rotation of the polishing pad and the spindle and extending to the opening in the polishing surface, the air supply unit supplies air to the penetrating path to close the penetrating path to the flow of the slurry from the slurry supply unit, wherein the air supplied by the air supply unit is directed through the opening in the polishing pad and sprayed onto an upper surface of the wafer that closes the opening of the polishing pad through bringing the upper surface of the wafer held by the holding table into contact with the polishing surface of the polishing pad, and the wafer is polished in such a manner that the slurry supplied from the slurry supply unit is spread over a whole of the polishing surface due to a flow of the air in a radial manner from the opening toward an outer circumference in a polishing surface direction of the polishing pad. 2. The polishing apparatus according to claim 1 , wherein the slurry supply unit is a mist slurry supply unit that sprays mist slurry obtained by mixing slurry and air onto a part protruding from the wafer in the polishing surface when the polishing pad with the polishing surface larger than the upper surface of the wafer is mounted to the spindle and the polishing surface is brought into contact with the upper surface of the wafer held by the holding surface. 3. The polishing apparatus according to claim 1 , wherein the slurry supply unit is a penetrating path slurry supply unit that supplies slurry to the penetrating path. 4. The polishing apparatus according to claim 1 , further comprising another slurry supply unit that supplies slurry to the polishing surface of the polishing pad. 5. The polishing apparatus according to claim 1 , further comprising a thickness measurement unit including a light projecting part and a light receiving part, said thickness measurement unit configured to measure a thickness of the wafer. 6. The polishing apparatus according to claim 1 , wherein the polishing pad includes grooves. 7. The polishing apparatus according to claim 6 , wherein the grooves formed on the polishing pad are arranged in a lattice pattern.
of semiconductor materials · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title
Control means for lapping machines or devices · CPC title
designed for working plane surfaces · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.