Substrate processing method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-11769661-B2
Application number	US-202016881306-A
Country	US
Kind code	B2
Filing date	May 22, 2020
Priority date	May 27, 2019
Publication date	Sep 26, 2023
Grant date	Sep 26, 2023

Abstract

A substrate processing method includes a first cleaning process and a second cleaning process. In the first cleaning process, a substrate is cleaned with a first cleaning solution. In the second cleaning process, the substrate is cleaned with a second cleaning solution having a lower cleanliness than the first cleaning solution after the first cleaning process.

First claim

We claim:

1. A substrate processing method, comprising:
cleaning a first surface of a substrate with a first cleaning solution discharged from a first nozzle;
cleaning the first surface with a second cleaning solution having a lower cleanliness than the first cleaning solution and discharged from the first nozzle after the cleaning of the substrate with the first cleaning solution;
cleaning the first surface of the substrate with a third cleaning solution discharged from the first nozzle after the cleaning of the substrate with the second cleaning solution; and
cleaning a second surface of the substrate with the second cleaning solution discharged from a second nozzle different from the first nozzle;
wherein a total time period of the cleanings of the first surface with the first and third cleaning solutions is shorter than a time period of the cleaning of the first surface with the second cleaning solution,
wherein the first and third cleaning solutions are unused cleaning solutions, and
the second cleaning solution is a used cleaning solution recovered from the first cleaning solution.

2. The substrate processing method of claim 1 ,
wherein the second cleaning solution is a cleaning solution which is filtered at a temperature lower than room temperature after being used.

3. The substrate processing method of claim 1 , further comprising:
rinsing the substrate with functional water after the cleaning of the first surface of the substrate with the second cleaning solution.

4. The substrate processing method of claim 1 ,
wherein in the cleaning of the first surface of the substrate with the first cleaning solution, the substrate is cleaned with the first cleaning solution having a temperature equal to or higher than room temperature, and
in the cleaning of the first surface of the substrate with the second cleaning solution, the substrate is cleaned with the second cleaning solution having a temperature lower than the room temperature.

5. The substrate processing method of claim 3 ,
wherein in the cleaning of the first surface of the substrate with the first cleaning solution, the substrate is cleaned with the first cleaning solution having a temperature equal to or higher than room temperature, and
in the cleaning of the first surface of the substrate with the second cleaning solution, the substrate is cleaned with the second cleaning solution having a temperature lower than the room temperature.

Assignees

• Tokyo Electron Ltd

Inventors

• Takeguchi Hirofumi
• Shinohara Kazuyoshi
• Otsuka Takahisa
• Lee Suguen

Classifications

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P72/0414 Primary

  using mainly spraying means, e.g. nozzles · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P70/00

  Cleaning of wafers, substrates or parts of devices · CPC title