Optical device

Patent metadata

Field	Value
Publication number	US-11768418-B2
Application number	US-202117443971-A
Country	US
Kind code	B2
Filing date	Jul 29, 2021
Priority date	Apr 28, 2016
Publication date	Sep 26, 2023
Grant date	Sep 26, 2023

Abstract

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

First claim

What is claimed is:

1. An integrated optical device comprising:
a waveguide cladding volume;
a waveguide layer within the waveguide cladding volume, wherein the waveguide layer comprises at least one waveguide core that is elongated in a longitudinal direction, wherein the waveguide core and a portion of the waveguide cladding volume form a waveguide; and
a perturbation layer adjacent to the waveguide layer, wherein the perturbation layer comprises:
a first emitter layer comprising a first plurality of emitters adjacent to the waveguide core;
a second emitter layer comprising a second plurality of emitters, wherein the second plurality of emitters are separated from the first plurality of emitters in a depth direction perpendicular to the longitudinal direction by a separation distance that is greater than at least half of a thickness of the first emitter layer or the second emitter layer in the depth direction;
wherein a sum of the thickness of the first emitter layer, the separation distance, and the thickness of the second emitter layer is less than 2 times a single wavelength of light that the waveguide is configured to guide; and
wherein the separation distance and the thicknesses of the first and second emitter layers are configured such that the perturbation layer comprises an antenna from which light in the waveguide core is perturbed and emitted from a light-emitting region of the integrated optical device over an emission length in the longitudinal direction that is at least 100 times longer than a width of the waveguide core.

2. The integrated optical device of claim 1 , wherein the first emitter layer is formed from the same material as the waveguide core.

3. The integrated optical device of claim 1 , wherein the first emitter layer is formed from at least partially etching a layer that includes both the waveguide layer and the first emitter layer.

4. The integrated optical device of claim 1 , wherein a direction at which light is emitted from the integrated optical device is selected based at least in part on the separation distance.

5. The integrated optical device of claim 1 , wherein the second plurality of emitters is offset by an offset distance in the longitudinal direction relative to the first plurality of emitters.

6. The integrated optical device of claim 5 , wherein the offset distance and the separation distance are configured to emit light from the integrated optical device in a single direction.

7. The integrated optical device of claim 6 , wherein the offset distance is approximately ±λ eff /4+mλ eff /2, wherein λ eff is an effective wavelength of light guided by the waveguide and m is an integer.

8. The integrated optical device of claim 6 , wherein the separation distance is approximately λ c /4+nλ c /2, wherein n is an integer and λ c is an effective wavelength of light in the cladding volume.

9. The integrated optical device of claim 1 , wherein:
each of the first plurality of emitters has a first length in the longitudinal direction; and
each of the second plurality of emitters has a second length in the longitudinal direction, wherein the second length is different from the first length.

10. The integrated optical device of claim 1 , wherein the thickness of the first emitter layer is less than the thickness of the second emitter layer, wherein the first thickness and the second thickness are in the depth direction.

11. The integrated optical device of claim 1 , wherein the first plurality of emitters are formed from a first material and the second plurality of emitters are formed from a second material that is different from the first material.

12. The integrated optical device of claim 11 , wherein a dielectric constant of the second material is greater than a dielectric constant of the first material.

13. A method of forming an integrated optical device, the method comprising:
forming a waveguide cladding volume;
forming a waveguide layer within the waveguide cladding volume, wherein the waveguide layer comprises at least one waveguide core that is elongated in a longitudinal direction, wherein the waveguide core and a portion of the waveguide cladding volume form a waveguide; and
forming a perturbation layer adjacent to the waveguide layer, wherein the perturbation layer comprises:
a first emitter layer comprising a first plurality of emitters adjacent to the waveguide core; and
a second emitter layer comprising a second plurality of emitters, wherein the second plurality of emitters are separated from the first plurality of emitters in a depth direction perpendicular to the longitudinal direction by a separation distance that is greater than at least half of a thickness of the first emitter layer or the second emitter layer in the depth direction;
wherein a sum of the thickness of the first emitter layer, the separation distance, and the thickness of the second emitter layer is less than 2 times a single wavelength of light that the waveguide is configured to guide; and
wherein the separation distance and the thicknesses of the first and second emitter layers are configured such that the perturbation layer comprises an antenna from which light in the waveguide core is perturbed and emitted from a light-emitting region of the integrated optical device over an emission length in the longitudinal direction that is at least 100 times longer than a width of the waveguide core.

Assignees

• Analog Photonics LLC

Inventors

• Watts Michael
• Hosseini Ehsan
• Poulton Christopher
• Timurdogan Erman

Classifications

• G02F1/225 Primary

  in an optical waveguide structure · CPC title

• G02B6/1223

  high refractive index type, i.e. high-contrast waveguides · CPC title

• G02B6/29331

  operating by evanescent wave coupling · CPC title

• G02F1/025

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F1/292

  by controlled diffraction or phased-array beam steering (controlled diffraction for optical switching G02F1/31) · CPC title