Method for machining sputtering target, apparatus for machining sputtering target, sputtering target, and method for producing sputtering target product

Patent metadata

Field	Value
Publication number	US-11766726-B2
Application number	US-201816484242-A
Country	US
Kind code	B2
Filing date	Feb 9, 2018
Priority date	Feb 16, 2017
Publication date	Sep 26, 2023
Grant date	Sep 26, 2023

Abstract

A method for machining a sputtering target that includes a sputtering surface, an opposing surface opposite to the sputtering surface, and an outer peripheral surface being between the sputtering surface and the opposing surface comprises the steps of: fixing the sputtering target on a fixing table by mounting the sputtering surface or the opposing surface of the sputtering target on the fixing table; and cutting the outer peripheral surface of the sputtering target by a cutting tool while rotating the cutting tool along a circumferential direction of the outer peripheral surface of the sputtering target.

First claim

The invention claimed is:

1. A sputtering target comprising a sputtering surface, an opposing surface opposite to the sputtering surface, and an outer peripheral surface being between the sputtering surface and the opposing surface, wherein
the outer peripheral surface is substantially rectangular as viewed from a side surface of the sputtering target, and
a maximum distortion in the perpendicular to the side surface on a long side of the sputtering target is 0.003 mm or larger and 0.15 mm or smaller, wherein
the side surface on a long side of the sputtering target constitutes a part of the outer peripheral surface, and the maximum distortion of the side surface on a long side of the sputtering target means the maximum distance between the side surface on the long side of the sputtering target and a straight line (imaginary line) connecting both ends of the corresponding side surface on the long side of the sputtering target,
the ratio of the length of the long side to the length of a short side of the sputtering target being in the range of 5:1 to 25:1, and
the material of the sputtering target being aluminum the purity of which is 99.99% or larger.

2. The sputtering target according to claim 1 , wherein a ratio of the maximum distortion of the side surface on the long side of the sputtering target to a length in a long-side direction of the sputtering target is 0.0075% or smaller.

3. The sputtering target according to claim 1 , wherein a length in a long-side direction of the sputtering target is 1,500 mm or larger and 4,000 mm or smaller.

4. The sputtering target according to claim 1 , wherein an aspect ratio of a length in a long-side direction to a length in a short-side direction of the sputtering target is 5 or larger and 25 or smaller.

5. A sputtering target product, which comprises the sputtering target according to claim 1 , and a backing plate to which the sputtering target is joined.

Assignees

• Sumitomo Chemical Co

Inventors

• Fujita Masahiro
• Nishioka Koji

Classifications

• B23C3/12 Primary

  Trimming or finishing edges, e.g. deburring welded corners · CPC title

• C23C14/3407 Primary

  Cathode assembly for sputtering apparatus, e.g. Target · CPC title

• B23C3/00

  Milling particular work; Special milling operations; Machines therefor (milling gear-teeth B23F, {heat assisted machining B23P25/00}) · CPC title

• B23C2222/04

  Aluminium · CPC title

• H01J37/3491

  Manufacturing of targets · CPC title