Plasma processing method and plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-11764034-B2
Application number	US-202016878098-A
Country	US
Kind code	B2
Filing date	May 19, 2020
Priority date	May 28, 2019
Publication date	Sep 19, 2023
Grant date	Sep 19, 2023

Abstract

A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

First claim

What is claimed is:

1. A method of plasma processing comprising:
applying a first direct-current voltage to a substrate support provided in a chamber of an apparatus for plasma processing, in a first period during generation of plasma in the chamber; and
applying a second direct-current voltage to the substrate support in a second period different from the first period during generation of the plasma in the chamber, the second direct-current voltage having a level different from a level of the first direct-current voltage and having a same polarity as a polarity of the first direct-current voltage, wherein
the apparatus includes
a power source having a first output for the first direct-current voltage and a second output for the second direct-current voltage,
a first switch connected between the first output and the substrate support, and
a second switch connected between the second output and the substrate support,

in the first period, the first switch is set to a conduction state to connect the first output and the substrate support to each other and the second switch is set to a non-conduction state to break a connection between the second output and the substrate support, and
in the second period, the second switch is set to a conduction state to connect the second output and the substrate support to each other and the first switch is set to a non-conduction state to break a connection between the first output and the substrate support.

2. The method according to claim 1 , further comprising setting a potential of the substrate support to a ground potential in a third period between a point in time of end of the first period and a point in time of start of the second period,
wherein the apparatus further includes a third switch connected between the substrate support and a ground,
in the first period and the second period, the third switch is set to a non-conduction state to break a connection between the substrate support and the ground, and
in the third period, the third switch is set to a conduction state to connect the substrate support and the ground to each other, the first switch is set to a non-conduction state to break a connection between the first output and the substrate support, and the second switch is set to a non-conduction state to break a connection between the second output and the substrate support.

3. The method according to claim 2 , further comprising setting the first switch, the second switch, and the third switch to a non-conduction state in a period between a point in time of end of the third period and a point in time of start of the second period.

4. A method of plasma processing comprising:
applying a direct-current voltage from a power source to a substrate support provided in a chamber of an apparatus for plasma processing, in a first period during generation of plasma in the chamber;
connecting the substrate support to a ground in a second period different from the first period during generation of the plasma in the chamber, wherein the substrate support is electrically separated from the power source in the second period; and
connecting the power source to the substrate support in a third period during generation of the plasma in the chamber and after the second period, the third period starting before a potential of the substrate support reaches a ground potential, wherein the substrate support is electrically separated from the ground in the third period,
wherein a point in time of end of the third period is a point in time before the potential of the substrate support reaches a steady state, and the substrate support is electrically separated from the power source at the point in time of end of the third period.

5. The method according to claim 4 , further comprising electrically separating the substrate support from both the power source and the ground in a period between a point in time of end of the second period and a point in time of start of the third period.

6. The method according to claim 4 , wherein said connecting the substrate support to the ground and said connecting the power source to the substrate support are alternately repeated, and
said connecting the substrate support to the ground is initiated again before the potential of the substrate support reaches a steady state after execution of said connecting the power source to the substrate support.

7. A method of plasma processing comprising:
applying a first direct-current voltage from a first output of a power source to of a substrate support provided in a chamber of an apparatus for plasma processing, in a first period during generation of plasma in the chamber, wherein the power source has the first output and a second output for a second direct-current voltage having a level lower than a level of the first direct-current voltage;
connecting the substrate support to a ground in a second period different from the first period during generation of the plasma in the chamber, wherein the substrate support is electrically separated from the first output and the second output in the second period; and
connecting the second output to the substrate support in a third period during the generation of the plasma in the chamber and after the second period, the third period starting before a potential of the substrate support reaches a ground potential, wherein the substrate support is electrically separated from the first output and the ground in the third period,
wherein a point in time of end of the third period is a point in time before the potential of the substrate support reaches a steady state, and the substrate support is electrically separated from the first output and the second output at the point in time of end of the third period.

8. The method according to claim 7 , further comprising electrically separating the substrate support from the first output, the second output, and the ground in a period between a point in time of end of the second period and a point in time of start of the third period.

9. The method according to claim 7 , wherein said connecting the substrate support to the ground and said connecting the second output to the substrate support are alternately repeated, and
said connecting the substrate support to the ground is initiated again before the potential of the substrate support reaches a steady state after execution of said connecting the second output to the substrate support.

10. The method according to claim 5 , wherein said connecting the substrate support to the ground and said connecting the power source to the substrate support are alternately repeated, and
said connecting the substrate support to the ground is initiated again before the potential of the substrate support reaches a steady state after execution of said connecting the power source to the substrate support.

11. The method according to claim 8 , wherein said connecting the substrate support to the ground and said connecting the second output to the substrate support are alternately repeated, and
said connecting the substrate support to the ground is initiated again before the potential of the substrate support reaches a steady state after execution of said connecting the second output to the substrate support.

Assignees

• Tokyo Electron Ltd

Inventors

• Koshimizu Chishio
• Hirotsu Shin
• Ikeda Takenobu
• Nagami Koichi
• Himori Shinji

Classifications

• H01J37/32174 Primary

  Circuits specially adapted for controlling the RF discharge · CPC title

• H01J37/32137 Primary

  controlling of the discharge by modulation of energy · CPC title

• H01J37/32715 Primary

  Workpiece holder · CPC title

• H01J37/32183 Primary

  Matching circuits · CPC title

• H01J37/32568

  Relative arrangement or disposition of electrodes; moving means · CPC title