Hetergenous integration and electro-optic modulation of III-nitride photonics on a silicon photonic platform

Patent metadata

Field	Value
Publication number	US-11754865-B2
Application number	US-202016953574-A
Country	US
Kind code	B2
Filing date	Nov 20, 2020
Priority date	Nov 22, 2019
Publication date	Sep 12, 2023
Grant date	Sep 12, 2023

Abstract

A photonic integrated circuit comprises a silicon nitride waveguide, an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator, and electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.

First claim

What is claimed is:

1. A photonic integrated circuit comprising:
a silicon nitride waveguide;
an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, the III-nitride waveguide structure bonded to the silicon nitride waveguide with a III-nitride slab;
a silicon dioxide layer disposed on a substrate, the silicon nitride waveguide disposed on the silicon dioxide layer beneath the III-nitride waveguide, the III-nitride slab supported above the silicon dioxide layer by the silicon nitride waveguide and by silicon nitride support layers disposed on the silicon dioxide layer and separated laterally from the silicon nitride waveguide in a direction perpendicular to a direction of light passage through the silicon nitride waveguide and III-nitride waveguide;
a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator; and
electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.

2. The photonic integrated circuit of claim 1 , wherein the III-nitride waveguide structure is formed of one of Al x Ga 1-x N (0≤x≤1), In x Ga 1-x N (0≤x≤1), or Al x In 1-x N (0≤x≤1).

3. The photonic integrated circuit of claim 1 , wherein the III-nitride waveguide structure includes a stacked layer of quantum wells formed of one of Al x Ga 1-z N (0≤x≤1), In x Ga 1-z N (0≤x≤1), or Al x In 1-z N (0≤x≤1).

4. The photonic integrated circuit of claim 1 , wherein the III-nitride waveguide structure is bonded to the silicon nitride waveguide and the silicon nitride support layers with the III-nitride slab.

5. The photonic integrated circuit of claim 1 , wherein the dielectric cladding is formed of silicon dioxide.

6. The photonic integrated circuit of claim 1 , further comprising one or more heterogeneously integrated III-nitride quantum well modulators.

7. The photonic integrated circuit of claim 1 , further comprising a photodetector.

8. The photonic integrated circuit of claim 7 , wherein the photodetector is optically coupled to the silicon nitride waveguide.

9. The photonic integrated circuit of claim 7 , wherein the photodetector is disposed on a same side of the silicon nitride waveguide as the dielectric cladding.

10. The photonic integrated circuit of claim 7 , wherein the photodetector is disposed on a opposite side of the silicon nitride waveguide as the dielectric cladding.

11. The photonic integrated circuit of claim 7 , further comprising a conductive via passing through the dielectric cladding and forming an electrical path between a contact pad of the photodetector and an external contact pad disposed on a surface of the dielectric cladding.

12. The photonic integrated circuit of claim 1 , further comprising a conductive via passing through the dielectric cladding and forming an electrical path between the III-nitride waveguide structure and an external contact pad disposed on a surface of the dielectric cladding.

13. The photonic integrated circuit of claim 1 , wherein the III-nitride waveguide structure has a tapered end portion.

14. The photonic integrated circuit of claim 1 , wherein the III-nitride waveguide is wider than the silicon nitride waveguide.

15. The photonic integrated circuit of claim 1 , wherein the III-nitride waveguide has greater height than the III-nitride slab.

16. The photonic integrated circuit of claim 1 , further comprising a layer of silicon dioxide disposed between the III-nitride slab and the silicon nitride waveguide.

Assignees

• Raytheon Bbn Technologies Corp

Inventors

• Soltani Moe
• Kazior Thomas

Classifications

• G02B6/12002 Primary

  Three-dimensional structures · CPC title

• G02F1/0553 Primary

  specially adapted for gating or modulating in optical waveguides · CPC title

• G02B2006/12142

  Modulator · CPC title

• G02F1/0154

  using electro-optic effects, e.g. linear electro optic [LEO], Pockels, quadratic electro optical [QEO] or Kerr effect · CPC title

• G02F1/0551

  Constructional details · CPC title