3D RRAM cell structure for reducing forming and set voltages

Patent metadata

Field	Value
Publication number	US-11751406-B2
Application number	US-202117392760-A
Country	US
Kind code	B2
Filing date	Aug 3, 2021
Priority date	Jul 29, 2019
Publication date	Sep 5, 2023
Grant date	Sep 5, 2023

Abstract

An RRAM cell stack is formed over an opening in a dielectric layer. The dielectric layer is sufficiently thick and the opening is sufficiently deep that an RRAM cell can be formed by a planarization process. The resulting RRAM cells may have a U-shaped profile. The RRAM cell area includes contributions from a bottom portion in which the RRAM cell layers are stacked parallel to the substrate and a side portion in which RRAM cell layers are stacked roughly perpendicular to the substrate. The combined side and bottom portions of the curved RRAM cell provide an increased area in comparison to a planar cell stack. The increased area lowers forming and set voltages for the RRAM cell.

First claim

What is claimed is:

1. An integrated circuit (IC) device, comprising:
a substrate;
a metal interconnect structure formed over the substrate;
a memory cell formed within the metal interconnect structure, the memory cell comprising a bottom electrode, a top electrode, and a data storage structure between the bottom electrode and the top electrode;
a bottom electrode via corresponding to the bottom electrode; and
an etch stop layer and an interfacial layer underneath the bottom electrode and above the substrate;
wherein upper surfaces of the top electrode and the bottom electrode are coplanar; and
the bottom electrode via passes through the etch stop layer and the interfacial layer.

2. The IC device of claim 1 , wherein
the etch stop layer comprises silicon carbide (SiC).

3. The IC device of claim 1 , wherein the bottom electrode and the data storage structure terminate at edges that form closed loops aligned in a plane.

4. The IC device of claim 1 , wherein the bottom electrode encompasses the data storage structure.

5. The IC device of claim 4 , wherein the data storage structure encompasses the top electrode.

6. The IC device of claim 1 , wherein the bottom electrode is surrounded by a low κ dielectric layer.

7. The IC device of claim 1 , wherein the bottom electrode is surrounded by an extremely low κ dielectric layer.

8. The IC device of claim 1 , wherein the data storage structure comprises a resistance switching layer and an active metal layer.

9. An integrated circuit (IC) device, comprising:
a substrate;
a metal interconnect structure formed over the substrate;
a memory cell formed within the metal interconnect structure, the memory cell comprising a bottom electrode, a top electrode, and a data storage structure between the bottom electrode and the top electrode;
a bottom electrode via abutting the bottom electrode; and
an etch stop layer underneath the bottom electrode and above the substrate;
wherein the memory cell has an edge that comprises the bottom electrode and the top electrode;
the bottom electrode and the top electrode are curved so that the edge is flat and has a horizontal orientation;
the bottom electrode via passes through the etch stop layer or the interfacial layer; and
the etch stop layer comprises silicon carbide (SiC).

10. The IC device of claim 9 , wherein the bottom electrode via passes through the etch stop layer and an interfacial layer.

11. The IC device of claim 9 , wherein the bottom electrode forms a loop around the top electrode on the edge.

12. The IC device of claim 9 , wherein the memory cell is disposed within a low K dielectric that is above the etch stop layer.

13. The IC device of claim 9 , wherein:
the memory cell has an area that includes a bottom area and a side area; and
the side area is greater than the bottom area.

14. The IC device of claim 9 , wherein the bottom electrode via passes through an interfacial layer that is distinct from the etch stop layer.

15. A method of manufacturing an integrated circuit (IC) device, comprising:
forming a metal interconnect layer over a semiconductor substrate;
forming an etch stop layer over the metal interconnect layer;
forming a via opening through the etch stop layer;
filling the via opening with metal to form a bottom electrode via;
forming a dielectric layer over the etch stop layer, wherein the dielectric layer is an oxide;
forming a memory cell opening in the dielectric layer;
forming a memory cell stack over the dielectric layer and the memory cell opening; and
planarizing the memory cell stack to form a memory cell within the memory cell opening.

16. The method of claim 15 , wherein:
the memory cell opening in the dielectric layer has a width and a height; and
the height is at least half the width.

17. The method of claim 15 , wherein:
forming the memory cell stack comprises successively forming a bottom electrode layer, a switching layer, and a top electrode layer;
forming the bottom electrode layer and the switching layer leaves the memory cell opening partially filled; and
forming the top electrode layer fills the memory cell opening.

18. The method of claim 15 , wherein forming the memory cell stack comprises forming a bottom electrode layer, a switching layer, an active metal layer, and a top electrode layer.

19. The method of claim 15 , wherein the dielectric layer is a low-κ dielectric layer.

20. The method of claim 19 , further comprising:
forming an interfacial layer over the etch stop layer;
wherein forming the via opening through the etch stop layer comprises forming the via opening through the interfacial layer and the etch stop layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hsieh Te-Hsien
• Chen Tzu-Yu
• Tu Kuo-Chi
• Tseng Yuan-Tai

Classifications

• H10B63/30 Primary

  comprising selection components having three or more electrodes, e.g. transistors · CPC title

• G11C13/0002

  using resistive RAM [RRAM] elements · CPC title

• H10N70/011

  Manufacture or treatment of multistable switching devices · CPC title

• H10N70/826 Primary

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title

• H10N70/841

  Electrodes · CPC title