Passivation against vapor deposition

Patent metadata

Field	Value
Publication number	US-11739422-B2
Application number	US-202217807920-A
Country	US
Kind code	B2
Filing date	Jun 21, 2022
Priority date	Jul 14, 2017
Publication date	Aug 29, 2023
Grant date	Aug 29, 2023

Abstract

Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.

First claim

What is claimed is:

1. A method for vapor-phase coating, the method comprising:
passivating a first surface against vapor-phase deposition, wherein the passivating comprises exposing the first surface to a passivating agent comprising a halogen to form a passivated first surface; and
selectively depositing a dielectric layer on a second surface relative to the passivated first surface by exposing both the passivated first surface and the second surface to vapor-phase deposition reactants, wherein the second surface has a different composition than the first surface.

2. The method of claim 1 , wherein the dielectric layer comprises a metal oxide.

3. The method of claim 1 , wherein the dielectric layer comprises a material selected from the group consisting of zirconium oxide, hafnium oxide, and titanium oxide.

4. The method of claim 1 , wherein the dielectric layer comprises a metal nitride.

5. The method of claim 1 , wherein the second surface comprises an oxide.

6. The method of claim 1 , wherein the first surface comprises a metal, and the second surface is a non-conductive surface.

7. The method of claim 1 , wherein a semiconductor substrate comprises the first surface and the second surface.

8. The method of claim 1 , wherein the first surface is a reactor surface.

9. The method of claim 1 , wherein the selectively depositing comprises conducting an atomic layer deposition process.

10. The method of claim 1 , wherein the selectively depositing comprises supplying water, O 2 , NH 3 or O 3 .

11. A method for vapor-phase coating, the method comprising:
passivating a first surface against vapor-phase deposition to form a passivated first surface; and
selectively depositing a dielectric layer on a second surface relative to the passivated first surface by exposing both the passivated first surface and the second surface to vapor-phase deposition reactants, wherein the second surface has a different composition than the first surface, and wherein the dielectric layer comprises a material selected from the group consisting of a metal nitride, zirconium oxide, and hafnium oxide.

12. The method of claim 11 , wherein the material is the metal nitride.

13. The method of claim 11 , wherein the material is zirconium oxide.

14. The method of claim 11 , wherein the material is hafnium oxide.

15. The method of claim 11 , wherein the passivating comprises exposing the first surface to a passivating agent comprising a halide.

16. The method of claim 11 , wherein the passivated first surface comprises hydrophobic terminations or terminations that are inert to the vapor-phase deposition reactants.

17. The method of claim 11 , wherein the passivating is performed in about 2 hours or less.

18. The method of claim 11 , wherein the second surface comprises an oxide or nitride surface.

19. The method of claim 11 , wherein the first surface is a conductive surface, and the second surface comprises an inorganic dielectric.

20. The method of claim 11 , further comprising repeating the passivating and the selectively depositing.

Assignees

• Asm Ip Holding Bv

Inventors

• Sharma Varun
• Tois Eva E

Classifications

• H10P14/61

  using masks · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/6926

  the material comprising alkyl silsesquioxane, e.g. MSQ · CPC title