Highly adhesive CVD grown boron doped diamond graded layer on WC-Co

Patent metadata

Field	Value
Publication number	US-11739419-B2
Application number	US-201816608790-A
Country	US
Kind code	B2
Filing date	Apr 26, 2018
Priority date	Apr 27, 2017
Publication date	Aug 29, 2023
Grant date	Aug 29, 2023

Abstract

Improved thin film coatings, cutting tool materials and processes for cutting tool applications are disclosed. A boron-doped graded diamond thin film for forming a highly adhesive surface coating on a cemented carbide (WC—Co) cutting tool material is provided. The thin film is fabricated in a HFCVD reactor. It is made of a bottom layer of BMCD in contact with a surface layer of the cemented carbide, a top layer made of NCD and a transition layer with a decreasing concentration gradient of boron obtained by changing the reaction conditions through ramp up option in hot filament CVD reactor. The top layer has a low friction coefficient. The bottom layer in the coating substrate interface has better interfacial adhesion through cobalt and boron reactivity and decreased cobalt diffusivity in the diamond. The transition layer has minimized lattice mismatch and sharp stress concentration between the top and bottom layers.

First claim

We claim:

1. A boron-doped graded diamond thin film for forming a highly adhesive surface coating on a cemented carbide (WC—Co) cutting tool material, comprising:
i. a bottom coating layer formed on a surface layer of the cemented carbide material, comprising a boron-doped microcrystalline diamond (BMCD), wherein the concentration of boron in the BMCD layer is between 0.2-0.25%, and wherein the concentration of cobalt in the surface layer is between 0.1-1%;
ii. a top coating layer, comprising nanocrystalline diamond (NCD) substantially free of boron; and
iii. a transition coating layer formed between the top and bottom layers, comprising a decreasing concentration gradient of boron from the bottom layer to top layer, wherein the concentration of boron in the surface of transition layer in contact with the bottom layer is 0.2-0.25%, and wherein the concentration of boron in the surface of transition layer in contact with top layer is substantially free of boron.

2. The film of claim 1 , wherein the total thickness is 4-10 microns.

3. The film of claim 1 , wherein the thickness of the bottom layer is 1-6 microns.

4. An enhanced cutting tool, comprising:
i. A cemented carbide (WC—Co) matrix with a cobalt-depleted surface layer, wherein the matrix comprises 1-6% cobalt and wherein the surface layer comprises 0.1-1% cobalt;
ii. a boron-doped graded diamond thin film coated on the cemented carbide matrix, comprising:
a) a bottom coating layer formed on the surface layer of the cemented carbide material, comprising a boron-doped microcrystalline diamond (BMCD), wherein the concentration of boron in the bottom layer is between 0.2-0.25%;
b) a top coating layer, comprising a nanocrystalline diamond (NCD) substantially free of boron; and
c) a transition coating layer formed between the top and bottom layers, comprising a decreasing concentration gradient of boron from 0.2-0.25% in the surface in contact with the bottom layer to the surface in contact with the top layer substantially free of boron.

5. The cutting tool of claim 4 , wherein the grain size of the top layer is 100 nm-1000 nm.

6. The cutting tool of claim 4 , wherein the grain size of the bottom layer is 500-1500 nm.

7. The cutting tool of claim 4 , wherein the grain size of the transition layer is 100 nm-1500 nm.

8. The cutting tool of claim 4 , wherein the surface roughness value of the cutting tool is 100 nm or lower.

Assignees

• Indian Inst Tech Madras

Inventors

• Ramasubramaniyan Kannan
• Arunachalam Narayanan
• Rao Ramachandra

Classifications

• C23C16/029 Primary

  Graded interfaces · CPC title

• B23B27/14

  Cutting tools of which the bits or tips {or cutting inserts} are of special material · CPC title

• B23B27/148

  Composition of the cutting inserts · CPC title

• C23C16/0227 Primary

  by cleaning or etching · CPC title

• C23C16/271

  using hot filaments · CPC title